Patents by Inventor Andras Kis

Andras Kis has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210217919
    Abstract: The present disclosure concerns an excitonic device including at least one heterostructure comprising or consisting solely of a first two-dimensional material or layer and a second two-dimensional material or layer. The at least one heterostructure being configured to generate interlayer excitons at high temperature or room temperature.
    Type: Application
    Filed: May 28, 2019
    Publication date: July 15, 2021
    Inventors: Dmitrii UNUCHEK, Alberto CIARROCCHI, Ahmet AVSAR, Andras KIS
  • Patent number: 9608101
    Abstract: The present invention concerns semiconductor devices comprising a source electrode, a drain electrode and a semiconducting layer consisting of a single or double 2-dimensional layer(s) made from one of the following materials: MoS2, MoSe2, WS2, WSe2, MoTe2 or WTe2. Replacing a stack by only one or two 2-dimensional layer(s) of MoS2, MoSe2, WS2, or WSe2, MoTe2 or WTe2 provides an enhanced electrostatic control, low power dissipation, direct band gap and tunability.
    Type: Grant
    Filed: January 4, 2012
    Date of Patent: March 28, 2017
    Assignee: ECOLE POLYTECHNIQUE FEDERALE DE LAUSANNE (EPFL)
    Inventors: Andras Kis, Branimir Radisavljevic
  • Publication number: 20140197459
    Abstract: Semiconductor device comprising a source electrode, a drain electrode and a semiconducting layer consisting of a single or double 2-dimensional layer(s) made from one of the following materials: MoS2, MoSe2, WS2, WSe2, MoTe2 or WTe2.
    Type: Application
    Filed: January 4, 2012
    Publication date: July 17, 2014
    Applicant: ECOLE POLYTECHNIQUE FEDERALE DE LAUSANNE (EPFL)
    Inventors: Andras Kis, Branimir Radisavljevic