Abstract: A semiconductor device includes an insulating carrier structure comprised of an insulating inorganic material. The carrier structure has a receptacle in which a semiconductor chip is disposed. The semiconductor chip has a first side, a second side and a lateral rim. The carrier structure laterally surrounds the semiconductor chip and the lateral rim. The semiconductor device also includes a metal structure on and in contact with the second side of the semiconductor chip and embedded in the carrier structure.

Abstract: A carrier substrate having a plurality of receptacles each for receiving and carrying a semiconductor chip is provided. Semiconductor chips are arranged in the receptacles, and metal is plated in the receptacles to form a metal structure on and in contact with the semiconductor chips. The carrier substrate is cut to form separate semiconductor devices.

Abstract: A method of processing a power semiconductor device includes: providing a semiconductor body of the power semiconductor device; coupling a mask to the semiconductor body; and subjecting the semiconductor body to an ion implantation such that implantation ions traverse the mask prior to entering the semiconductor body.

Abstract: A method of producing an implantation ion energy filter, suitable for processing a power semiconductor device. In one example, the method includes creating a preform having a first structure; providing an energy filter body material; and structuring the energy filter body material by using the preform, thereby establishing an energy filter body having a second structure.

Abstract: Various embodiments provide a mold including a pyrolytic carbon film disposed at a surface of the mold. Various embodiments relate to using a low pressure chemical vapor deposition process (LPCVD) or using a physical vapor deposition (PVD) process in order to form a pyrolytic carbon film at a surface of a mold.

Abstract: A method of manufacturing a semiconductor device includes forming a frame trench extending from a first surface into a base substrate, forming, in the frame trench, an edge termination structure comprising a glass structure, forming a conductive layer on the semiconductor substrate and the edge termination structure, and removing a portion of the conductive layer above the edge termination structure. A remnant portion of the conductive layer forms a conductive structure that covers a portion of the edge termination structure directly adjoining a sidewall of the frame trench.

Abstract: A semiconductor device includes a glass piece and an active semiconductor element formed in a single-crystalline semiconductor portion. The single-crystalline semiconductor portion has a working surface, a rear side surface opposite to the working surface and an edge surface connecting the working and rear side surfaces. The glass piece has a portion extending along and in direct contact with the edge surface of the single-crystalline semiconductor portion.

Abstract: A semiconductor device includes a semiconductor body with a first surface at a first side, a second surface opposite to the first surface and an edge surface connecting the first and second surfaces. An edge termination structure includes a glass structure and extends along the edge surface, at least from a plane coplanar with the first surface towards the second surface. A conductive structure extends parallel to the first surface and overlaps the glass structure at the first side.

Abstract: A method of manufacturing a plurality of glass members comprises bringing a first main surface of a glass substrate in contact with a first working surface of a first mold substrate, the first working surface being provided with a plurality of first protruding portions, and bringing a second main surface of the glass substrate in contact with a second working surface of a second mold substrate, the second working surface being provided with a plurality of second protruding portions. The method further comprises controlling a temperature of the glass substrate to a temperature above a glass-transition temperature to form the plurality of glass members, removing the first and the second mold substrates from the glass substrate, and separating adjacent ones of the plurality of glass members.

Abstract: A capacitive microphone may include a housing, a membrane, and a first backplate, wherein a first insulating layer may be disposed on a first side of the first backplate facing the membrane and a second insulating layer may be disposed on a second side of the first backplate opposite to the first side of the first backplate. A further insulating layer may be disposed on a side wall of at least one of a plurality of perforation holes in the first backplate. Each conductive surface of the first backplate may be covered with insulating material.

Abstract: Methods, apparatuses and devices are described where a main wafer is irreversibly bonded to a carrier wafer and thinned to reduce a thickness of the main wafer, for example down to a thickness of 300 ?m or below.

Abstract: In various embodiments, a method for manufacturing microphone structures is provided.

Abstract: Methods, apparatuses and devices are described where a main wafer is irreversibly bonded to a carrier wafer and thinned to reduce a thickness of the main wafer, for example down to a thickness of 300 ?m or below.

Abstract: A device includes a semiconductor material having a first main surface, an opposite surface opposite to the first main surface and a side surface extending from the first main surface to the opposite surface. The device further includes a first electrical contact element arranged on the first main surface of the semiconductor material and a glass material. The glass material includes a second main surface wherein the glass material contacts the side surface of the semiconductor material and wherein the first main surface of the semiconductor material and the second main surface of the glass material are arranged in a common plane.

Abstract: A capacitive microphone may include a housing, a membrane, and a first backplate, wherein a first insulating layer may be disposed on a first side of the first backplate facing the membrane and a second insulating layer may be disposed on a second side of the first backplate opposite to the first side of the first backplate. A further insulating layer may be disposed on a side wall of at least one of a plurality of perforation holes in the first backplate. Each conductive surface of the first backplate may be covered with insulating material.

Abstract: A semiconductor device includes a glass piece and an active semiconductor element formed in a single-crystalline semiconductor portion. The single-crystalline semiconductor portion has a working surface, a rear side surface opposite to the working surface and an edge surface connecting the working and rear side surfaces. The glass piece has a portion extending along and in direct contact with the edge surface of the single-crystalline semiconductor portion.

Abstract: A cavity is formed in a working surface of a substrate in which a semiconductor element is formed. A glass piece formed from a glass material is bonded to the substrate, and the cavity is filled with the glass material. For example, a pre-patterned glass piece is used which includes a protrusion fitting into the cavity. Cavities with widths of more than 10 micrometers are filled fast and reliably. The cavities may have inclined sidewalls.

Abstract: A semiconductor device includes a semiconductor body with a first surface at a first side, a second surface opposite to the first surface and an edge surface connecting the first and second surfaces. An edge termination structure includes a glass structure and extends along the edge surface, at least from a plane coplanar with the first surface towards the second surface. A conductive structure extends parallel to the first surface and overlaps the glass structure at the first side.

Abstract: Methods, apparatuses and devices are described where a main wafer is irreversibly bonded to a carrier wafer and thinned to reduce a thickness of the main wafer, for example down to a thickness of 300 ?m or below.

Abstract: A carrier substrate having a plurality of receptacles each for receiving and carrying a semiconductor chip is provided. Semiconductor chips are arranged in the receptacles, and metal is plated in the receptacles to form a metal structure on and in contact with the semiconductor chips. The carrier substrate is cut to form separate semiconductor devices.