Abstract: The present invention relates to fiber polymer composite comprising polypropylene fibers and a matrix material, the matrix material being in direct contact with at least some of the fibers, characterized in that the matrix material comprises 50% to 100% by weight based on the whole matrix material of an amorphous propylene-rich poly-alpha-olefin, to a process for producing the fiber polymer composite, and to the use of the fiber polymer composite.

Abstract: The invention relates to amorphous poly-alpha-olefins, which are characterized in that said amorphous poly-alpha-olefins have a viscosity at 190° C. of less than 5000 mPas, a molar mass distribution (Mw/Mn) of 3 to 8, a quotient Mz/Mw of less than or equal to 3.0 and a quotient Mz/Mn of less than 21.0. The invention further relates to a method for producing degraded amorphous poly-alpha-olefins, in particular the amorphous poly-alpha-olefins according to the invention, and to the use of the amorphous polyalpha-olefins according to the invention or produced according to the invention in hot-melt adhesive compositions.

Abstract: Composite of layers which comprises a dielectric layer and a layer which comprises pyrogenic zinc oxide and is bonded to the dielectric layer. Process for producing the composite of layers, in which the pyrogenic zinc oxide is applied to the dielectric layer in the form of a dispersion in which the zinc oxide particles are present with a mean aggregate diameter of less than 200 nm, and the zinc oxide layer is dried and then treated at temperatures of less than 200° C. Process for producing the composite of layers, in which the pyrogenic zinc oxide is applied to a substrate layer or a composite of substrate layers in the form of a dispersion in which the zinc oxide particles are present with a mean aggregate diameter of less than 200 nm to form a zinc oxide layer, and then the zinc oxide layer and the substrate layer are treated at temperatures of less than 200° C., and then a dielectric layer is applied to the zinc oxide layer. Field-effect transistor which has the composite of layers.

Abstract: Process for preparing higher hydridosilanes of the general formula H—(SiH2)n—H where n?2, in which—one or more lower hydridosilanes—hydrogen, and—one or more transition metal compounds comprising elements of transition group VIII of the Periodic Table and the lanthanides are reacted at a pressure of more than 5 bar absolute, subsequently depressurized and the higher hydridosilanes are separated off from the reaction mixture obtained.

Abstract: The present invention relates to multilayer packaging films with at least one layer containing a thermoplastic, where a coating containing at least one silicone has been applied on that side of the packaging film that faces towards the product requiring packaging, and to use of these, and to packaging processes using the packaging films mentioned.

Abstract: The present invention provides a porous semiconductive structure, characterized in that the structure has an electrical conductivity of 5·10?8 S·cm?1 to 10 S·cm?1, and an activation energy of the electrical conductivity of 0.1 to 700 meV, and a solid fraction of 30 to 60% by volume, and a pore size of 1 nm to 500 nm, the solid fraction having at least partly crystalline doped constituents which are bonded to one another via sinter necks and have sizes of 5 nm to 500 nm and a spherical and/or ellipsoidal shape, which comprise the elements silicon, germanium or an alloy of these elements, and also a process for producing a porous semiconductive structure, characterized in that A. doped semimetal particles are obtained, and then B. a dispersion is obtained from the semimetal particles obtained after step A, and then C. a substrate is coated with the dispersion obtained after step B, and then D. the layer obtained after step C is treated by means of a solution of hydrogen fluoride in water, and then E.

Abstract: Process for preparing higher hydridosilanes of the general formula H—(SiH2)n—H where n?2, in which—one or more lower hydridosilanes—hydrogen, and—one or more transition metal compounds comprising elements of transition group VIII of the Periodic Table and the lanthanides are reacted at a pressure of more than 5 bar absolute, subsequently depressurized and the higher hydridosilanes are separated off from the reaction mixture obtained.

Abstract: Composite of layers which comprises a dielectric layer and a layer which comprises pyrogenic zinc oxide and is bonded to the dielectric layer. Process for producing the composite of layers, in which the pyrogenic zinc oxide is applied to the dielectric layer in the form of a dispersion in which the zinc oxide particles are present with a mean aggregate diameter of less than 200 nm, and the zinc oxide layer is dried and then treated at temperatures of less than 200° C. Process for producing the composite of layers, in which the pyrogenic zinc oxide is applied to a substrate layer or a composite of substrate layers in the form of a dispersion in which the zinc oxide particles are present with a mean aggregate diameter of less than 200 nm to form a zinc oxide layer, and then the zinc oxide layer and the substrate layer are treated at temperatures of less than 200° C., and then a dielectric layer is applied to the zinc oxide layer. Field-effect transistor which has the composite of layers.

Abstract: The present invention provides a porous semiconductive structure, characterized in that the structure has an electrical conductivity of 5·10?8 S·cm?1 to 10 S·cm?1, and an activation energy of the electrical conductivity of 0.1 to 700 meV, and a solid fraction of 30 to 60% by volume, and a pore size of 1 nm to 500 nm, the solid fraction having at least partly crystalline doped constituents which are bonded to one another via sinter necks and have sizes of 5 nm to 500 nm and a spherical and/or ellipsoidal shape, which comprise the elements silicon, germanium or an alloy of these elements, and also a process for producing a porous semiconductive structure, characterized in that A. doped semimetal particles are obtained, and then B. a dispersion is obtained from the semimetal particles obtained after step A, and then C. a substrate is coated with the dispersion obtained after step B, and then D. the layer obtained after step C is treated by means of a solution of hydrogen fluoride in water, and then E.