Abstract: Bipolar transistors and MOS transistors on a single semiconductor substrate involves depositing a single layer of polysilicon on a substrate, including complementary transistors of either or both types, and a method for fabricating same. The devices are made by depositing a single layer of polysilicon on a substrate and etching narrow slots in the form of rings around every bipolar emitter area, which slots are thereafter filler with an insulating oxide. Then, emitters and extrinsic base regions are formed. The emitters are self-aligned to the extrinsic base regions. An optical cladding procedure produces a surface layer of a silicide compound, a low resistance conductor. The resulting structure yields a high-performance device in which the size constraints are at a minimum and contact regions may be made at the top surface of the device.

Abstract: Bipolar transistors and MOS transistors on a single semiconductor substrate involves depositing a single layer of polysilicon on a substrate, including complementary transistors of either or both types, and a method for fabricating same. The devices are made by depositing a single layer of polysilicon on a substrate and etching narrow slots in the form of rings around every bipolar emitter area, which slots are thereafter filled with an insulating oxide. Then, emitters and extrinsic base regions are formed. The emitters are self-aligned to the extrinsic base regions. An optional cladding procedure produces a surface layer of a silicide compound, a low resistance conductor. The resulting structure yields a high-performance device in which the size constraints are at a minimum and contact regions may be made at the top surface of the device.

Abstract: Bipolar transistors and MOS transistors on a single semiconductor substrate involves depositing a single layer of polysilicon on a substrate, including complementary transistors of either or both types, and a method for fabricating same. The devices are made by depositing a single layer of polysilicon on a substrate and etching narrow slots in the form of rings around every bipolar emitter area, which slots are thereafter filled with an insulating oxide. Then, emitters and extrinsic base regions are formed. The emitters are self-aligned to the extrinsic base regions. An optional cladding procedure produces a surface layer of a silicide compound, a low resistance conductor. The resulting structure yields a high-performance device in which the size constraints are at a minimum and contact regions may be made at the top surface of the device.

Abstract: A capped recrystallizable silicon layer covering a substrate is provided with a thin buffer layer between the capping layer and the silicon layer. This recrystallizable silicon layer is then converted to a monocrystalline silicon layer.

Abstract: A structure comprising thin defect-free monocrystalline layer of a silicon of an insulating layer is produced from a structure comprising a thin recrystallizable layer of silicon on an insulating layer by use of a low softening point insulating layer, scanning the structure relative to a zone heater the beams of which are focused on the recrystallizable silicon layer so as to form a melt zone having a convex solid-liquid interface in the silicon layer while forming a liquid area under the melt zone in the insulating layer.