Abstract: Described herein are novel systems for targeting, editing or manipulating DNA in a cell or cell free environment, using novel type V B-GEn.1 or B-GEn.2 nucleases and variants thereof, as well as methods and kits for manipulating DNA. Further disclosed are novel and improved single guide RNAs.

Abstract: Provided herein are bifunctional compounds that bind cyclin-dependent kinase 9 (CDK9) and/or promote targeted ubiquitination for the degradation of CDK9. In particular, provided are compounds that can bind CDK9, a protein whose dysregulation is implicated in a variety of cancers, and can promote CDK9?s degradation by recruiting an E3 ubiquitin ligase (e.g., Cereblon, VHL). The E3 ubiquitin ligase can ubiquitinate CDK9, marking it for proteasomal degradation. Also provided are pharmaceutical compositions comprising the bifunctional compounds. Also provided are methods of treating cancer, and methods of promoting the degradation of CDK9 protein by E3 ubiquitin ligase activity in a subject or biological sample by administering a compound or composition described herein.

Abstract: Provided herein are compounds useful for modulating the activity of an androgen receptor, or a variant thereof, and related compositions and methods. Compounds of the invention are useful for antagonizing the androgen receptor splice variant AR-v7, and for the treatment of castration-resistant prostate cancer.

Abstract: An electrical plug (EP) of an electrical plug-in (EPI) connection, including the plug and mating plug (MP), an electrical connection between EPI contacts of the plug contacts (PC) and mating contacts (MC) of the MP occurring when the plug and MP are inserted into each other, including: at least one connector strip (CS) in which EPI contacts, for electrical connection to MCs of the MP, are held by a first end; a free second end (FSE) of the EPI contacts projects away from the CS; a plug-in contact receiving chamber (PCRC) having subchamber bodies (SBs), the FSE of at least one of the EPI contacts projects into each of the SBs; the PCRC being open in the direction of the FSEs of the EPI contacts, the CS and the PCRC being separate components connected to one another, and at least two SBs of the PCRC being connected to one another by an elastic element permitting relative movement of the SBs in a plane perpendicular as to the EPI contacts.

Abstract: An electrical plug (EP) of an electrical plug-in (EPI) connection, including the plug and mating plug (MP), an electrical connection between EPI contacts of the plug contacts (PC) and mating contacts (MC) of the MP occurring when the plug and MP are inserted into each other, including: at least one connector strip (CS) in which EPI contacts, for electrical connection to MCs of the MP, are held by a first end; a free second end (FSE) of the EPI contacts projects away from the CS; a plug-in contact receiving chamber (PCRC) having subchamber bodies (SBs), the FSE of at least one of the EPI contacts projects into each of the SBs; the PCRC being open in the direction of the FSEs of the EPI contacts, the CS and the PCRC being separate components connected to one another, and at least two SBs of the PCRC being connected to one another by an elastic element permitting relative movement of the SBs in a plane perpendicular as to the EPI contacts.

Abstract: Provided herein are compounds useful for modulating the activity of an androgen receptor, or a variant thereof, and related compositions and methods. Compounds of the invention are useful for antagonizing the androgen receptor splice variant AR-v7, and for the treatment of castration-resistant prostate cancer.

Abstract: The invention relates to a method for marking wafers, in particular wafers for solar cell production: The method comprises the steps of manufacturing a position line (21a, 21b, 21c) on a peripheral surface of a silicon ingot or column, the ingot or column extending in an axial direction and having a longitudinal axis in the axial direction, wherein the position line extends in the axial direction along substantially the whole ingot or column and is inclined with respect to the longitudinal axis. By this position line it is possible to determine the position of a wafer cut from the ingot or column within the ingot or column, respectively. Further, an individual identification pattern (20a, 20b, 20c) of lines on the peripheral surface of the silicon ingot or column is manufactured, the individual identification pattern of lines extending in axial direction over substantially the whole ingot or column and providing an individual coding which allows to identify the silicon ingot or column.

Abstract: Solar cells, where at least one conductor is mechanically and electrically connected to the solar cell and/or further conductors by conductive cladding. The conductive cladding is preferably deposited electrolytically or galvanically from solution or is produced by plasma-spraying. In addition, methods for connecting solar cells by means of at least one conductor and/or for connecting conductors on solar cells, wherein at least one electrically-conductive conductor is mechanically and electrically connected by depositing conductive cladding from solution onto the solar cell and/or at least one conductor.

Abstract: The invention relates to an apparatus for electrically contacting a solar cell or a solar cell module, particularly for testing its performance, the solar cell or the solar cell module having an electrical contact, the apparatus comprising: a receiving volume for receiving a solar cell or a solar cell module, at least one fluid space for receiving an electrically conducting fluid, the fluid space being arranged with respect to the receiving volume such that a fluid in the fluid space at least partially covers an electrical contact of a solar cell or a solar cell module when being received by the receiving volume, and electrical transmitting means for connecting the fluid in the fluid space with a measurement device (I, U) in an electrically conducting manner.

Abstract: The invention relates to a method for marking wafers, in particular wafers for solar cell production: The method comprises the steps of manufacturing a position line (21a, 21b, 21c) on a peripheral surface of a silicon ingot or column, the ingot or column extending in an axial direction and having a longitudinal axis in the axial direction, wherein the position line extends in the axial direction along substantially the whole ingot or column and is inclined with respect to the longitudinal axis. By this position line it is possible to determine the position of a wafer cut from the ingot or column within the ingot or column, respectively. Further, an individual identification pattern (20a, 20b, 20c) of lines on the peripheral surface of the silicon ingot or column is manufactured, the individual identification pattern of lines extending in axial direction over substantially the whole ingot or column and providing an individual coding which allows to identify the silicon ingot or column.

Abstract: In a circuit arrangement for analyzing a clocked signal reflected from an object, particularly an optical signal, wherein at least one radiation emitter which, for providing the clocked signal, is connected to a clocking signal generator, and at least one radiation receiver which receives radiation pulses emitted by the radiation emitter and reflected from the object, and a comparator by which the output signal pulses of the radiation are compared with reference pulses whose amplitudes depend on output signals of the comparator, are provided, the reference signal pulses occur concurrently with the radiation impulses received by the radiation receiver and the impulses received by the radiation receiver are compensated for each by a respective internal reference impulse before their analysis in the circuit arrangement.

Abstract: In a circuit arrangement for analyzing a clocked signal reflected from an object, particularly an optical signal, comprising at least one radiation emitter which, for providing the clocked signal, is connected to a clocking signal generator, at least one radiation receiver which receives radiation pulses emitted by the radiation emitter and reflected from the object, and a comparator by means of which the output signal pulses of the radiation are compared with reference pulses wherein the amplitude of the reference signal pulses depends on output signals of the comparator, the reference signal pulses occur concurrently with the radiation impulses received by the radiation receiver and the impulses received by the radiation receiver are compensated for each by a respective internal reference impulse.

Abstract: In a device for operating a computer or computer-based apparatus comprising a first arrangement by which the position of an object on an axis can be determined, a second arrangement is provided by which, additionally the distance of the object from the axis can be determined.

Abstract: Wastewater from a chemical-mechanical polishing process (CMP) used in semiconductor chip fabrication has hitherto been, and is still being, discharged into the public sewage system after chemical neutralization and sedimentation. This has the drawback that water consumption is considerable. It is therefore an object of the invention to reduce the total amount of wastewater produced that has to be discharged. This is achieved by the wastewater to be treated being subjected to an ultra-filtration, and at least one of NF an RO. This allows the treated CMP wastewater to be reused within the plant. In particular, it can be recycled in order again to recover therefrom deionized water of a very high purity for operational purposes, e.g. for CMP.

Abstract: Wastewater from a chemical-mechanical polishing process (CMP) used in semiconductor chip fabrication has hitherto been, and is still being, discharged into the public sewage system after chemical neutralization and sedimentation. This has the drawback that water consumption is considerable. It is therefore an object of the invention to reduce the total amount of wastewater produced that has to be discharged. This is achieved by the wastewater to be treated being subjected to an ultra-filtration. This allows the treated CMP wastewater to be reused within the plant. In particular, it can be recycled in order again to recover therefrom deionized water of a very high purity for operational purposes, e.g. for CMP.

Abstract: Wastewater from a chemical-mechanical polishing process (CMP) used in semiconductor chip fabrication has hitherto been, and is still being, discharged into the public sewage system after chemical neutralization and sedimentation. This has the drawback that water consumption is considerable. It is therefore an object of the invention to reduce the total amount of wastewater produced that has to be discharged. This is achieved by the wastewater to be treated being subjected to an ultra-filtration. This allows the treated CMP wastewater to be reused within the plant. In particular, it can be recycled in order again to recover therefrom deionized water of a very high purity for operational purposes, e.g. for CMP.

Abstract: An apparatus for polishing wafers includes a polishing table with a heating device. A conduit connects a tank holding a liquid polishing agent to a distributor for feeding the liquid polishing agent to the polishing table. A heat exchanger is disposed along the conduit between the tank and the distributor for heating the liquid polishing agent. The heat exchanger is independent of said heating device. A method for heating a polishing agent is also provided.

Abstract: A variable electronic resistor (16), which can be varied by a control signal (Ust) at the control input (15), contains two parallel, signal paths (1 and 2) with identical components, of which one signal path carries a phase inverted input transmission signal and the other signal path carries a non phase inverted input transmission signal and which are additively joined at the output side. Each signal path contains a charge carrier channel (3) and a signal transmission stage (7) with a low impedance current input, located downstream of the output electrode (5) in the signal path of the charge carrier channel. The resistor of the charge carrier channel can be varied by a control voltage (Ust), which is common to both charge carrier channels, in a control electrode (14) of the semiconductor components (4).