Abstract: A multiple-level memory cell is capable of taking on a plurality of states, with each state being represented by a different value of a physical quantity and being associated with a corresponding logic value. A method for reading the memory cell includes the step of setting an actual physical quantity to a value correlated with the value of the physical quantity corresponding to the state of the memory cell. This step is repeated until the logic value corresponding to the state of the memory cell is determined. A cycle includes the step of setting a component of the logic value to a value which is a function of a range in which the actual physical quantity lies, as determined by comparing the actual physical quantity with at least one reference physical quantity having a predetermined value lying between a minimum value and a maximum value for the actual physical quantity.