Abstract: A method for coating a substrate by means of a cathode arrangement including at least two rotatable cathodes is disclosed. The method includes rotating at least one of the at least two rotatable cathodes in a first direction, and, at the same time, rotating at least one of the at least two rotatable cathodes in a second direction. The first direction is opposite to the second direction. Furthermore, a controller for controlling a coating process is disclosed. Furthermore, a coater for coating a substrate is disclosed. The coater includes a cathode arrangement with at least two rotatable cathodes and a controller as disclosed herein.

Abstract: A deposition system is provided which is adapted for depositing a thin film onto a substrate. The deposition system includes a substrate carrier adapted for carrying the substrate and at least one tilted evaporator crucible. The at least one tilted evaporator crucible is adapted for directing evaporated deposition material towards the substrate in a main emission direction. The main direction emission of the tilted evaporator crucible is different from a direction normal to the substrate.

Abstract: A process for the deposition of transparent and conductive indium-tin oxide (ITO) films with a particularly low resistance of preferably less than 200 ??cm and a small surface roughness of preferably less than 1 nm on a substrate, wherein combined BF/DC sputtering of an indium-tin oxide (ITO) target is employed and wherein the process gas is supplemented by an argon/hydrogen mixture as reaction gas during the sputtering, as well as ITO-films with the above-named characteristics.

Abstract: The invention relates to an evaporator arrangement with a crucible, wherein the crucible is divided into at least two zones, each of which is heated to different temperatures. The first zone is a melt-down zone and the second zone the evaporation zone proper. The evaporator arrangement is preferably for the evaporation of metals. If metals are evaporated, a metal wire is preferably guided into the melt-down zone. However, metal alloys can also be evaporated thereby that one or several metal wires comprised of different materials are guided into the melt-down zone. Between the melt-down zone and the evaporator zone a heating zone may be provided.

Abstract: A process for the deposition of transparent and conductive indium-tin oxide (ITO) films with a particularly low resistance of preferably less than 200 ??cm and a small surface roughness of preferably less than 1 nm on a substrate, wherein combined BF/DC sputtering of an indium-tin oxide (ITO) target is employed and wherein the process gas is supplemented by an argon/hydrogen mixture as reaction gas during the sputtering, as well as ITO-films with the above-named characteristics.

Abstract: On a glass substrate, a base layer of indium cerium oxide is deposited, and on this a thin copper-containing silver layer, both produced by means of DC sputtering. On top there is another indium cerium oxide layer, which is produced by means of AC-superimposed DC sputter deposition. This layer system boasts very low surface resistivity combined with high transparency in the visible part of the spectrum, which means it has a high Haacke quality factor.

Abstract: A process for the deposition of transparent and conductive indium-tin oxide (ITO) films with a particularly low resistance of preferably less than 200 ??cm and a small surface roughness of preferably less than 1 nm on a substrate, wherein combined HF/DC sputtering of an indium-tin oxide (ITO) target is employed and wherein the process gas is supplemented by an argon/hydrogen mixture as reaction gas during the sputtering, as well as ITO-films with the above-named characteristics.

Abstract: A vapor deposition device for vapor deposition of vertically aligned regions of a substrate has an upright, electrically heated melting crucible having an electrical heater for the material to be vaporized. A nozzle pipe, which is separate from the melting crucible and is sealable on top, having a vapor outlet for vapor deposition of the substrate, is seated on the melting crucible. The nozzle pipe has a heater which is independent of the heater of the melting crucible.

Abstract: A process for the deposition of transparent and conductive indium-tin oxide (ITO) films with a particularly low resistance of preferably less than 200 &mgr;&OHgr;cm and a small surface roughness of preferably less than 1 nm on a substrate, wherein combined HF/DC sputtering of an indium-tin oxide (ITO) target is employed and wherein the process gas is supplemented by an argon/hydrogen mixture as reaction gas during the sputtering, as well as ITO-films with the above-named characteristics.