Abstract: A polishing layer of a polishing has a window member with a top surface positioned a predetermined distance below the polishing surface. A transparent layer can be positioned below the polishing layer and supporting the window member.

Abstract: A polishing layer of a polishing has a window member with a top surface positioned a predetermined distance below the polishing surface. A transparent layer can be positioned below the polishing layer and supporting the window member.

Abstract: Polishing pads with a window, systems containing such polishing pads, and processes that use such polishing pads are disclosed.

Abstract: A system includes a measuring station for positioning an eddy current probe proximate to a substrate in a substrate holder. The probe can produce a time-varying magnetic field, in order to induce eddy currents in one or more conductive regions of a substrate either prior to or subsequent to polishing. The eddy current signals are detected, and may be used to update one or more polishing parameters for a chemical mechanical polishing system. The substrate holder may be located in a number places; for example, in a substrate transfer system, a factory interface module, a cleaner, or in a portion of the chemical mechanical polishing system away from the polishing stations. Additional probes may be used.

Abstract: A chemical mechanical polishing apparatus includes two optical systems which are used serially to determine polishing endpoints. The first optical system includes a first light source to generate a first light beam which impinges on a surface of the substrate, and a first sensor to measure light reflected from the surface of the substrate to generate a measured first interference signal. The second optical system includes a second light source to generate a second light beam which impinges on a surface of the substrate and a second sensor to measure light reflected from the surface of the substrate to generate a measured second interference signal. The second light beam has a wavelength different from the first light beam.

Abstract: The thickness of a layer on a substrate is measured in-situ during chemical mechanical polishing. A light beam is divided through a window in a polishing pad, and the motion of the polishing pad relative to the substrate causes the light beam to move in a path across the substrate surface. An interference signal produced by the light beam reflecting off the substrate is monitored, and a plurality of intensity measurements are extracted from the interference signal. Each intensity measurement corresponds to a sampling zone in the path across the substrate surface. A radial position is determined for each sampling zone, and the intensity measurements are divided into a plurality of radial ranges according to the radial positions. The layer thickness is computed for each radial range from the intensity measurements associated with that radial range.

Abstract: Methods and apparatus for monitoring a substrate surface during chemical mechanical polishing are disclosed.

Abstract: Polishing pads with a window, systems containing such polishing pads, and processes that use such polishing pads are disclosed.

Abstract: A chemical mechanical polishing apparatus includes a platen to support a polishing pad, and a polishing head to hold a substrate against the polishing pad during processing. The substrate includes a thin film structure disposed on a wafer. A first optical system includes a first light source to generate a first light beam which impinges on a surface of the substrate, and a first sensor to measure light reflected from the surface of the substrate to generate a measured first interference signal. A second optical system includes a second light source to generate a second light beam which impinges on a surface of the substrate and a second sensor to measure light reflected from the surface of the substrate to generate a measured second interference signal. The second light beam has a wavelength different from the first light beam.

Abstract: Polishing pads with a window, systems containing such polishing pads, and processes that use such polishing pads are disclosed.

Abstract: An apparatus, as well as a method, determines an endpoint of chemical mechanical polishing a metal layer on a substrate. The method of the apparatus includes bringing a surface of a substrate into contact with a polishing pad that has a window; causing relative motion between the substrate and the polishing pad; directing a light beam through the window, the motion of the polishing pad relative to the substrate causing the light beam to move in a path across the substrate; detecting light beam reflections from the substrate and a retaining ring; generating reflection data associated with the light beam reflections; dividing the reflection data into a plurality of radial ranges; and identifying the predetermined pattern from the reflection data in the plurality of radial ranges to establish the endpoint.

Abstract: Polishing pads with a window, systems containing such polishing pads, and processes that use such polishing pads are disclosed. In embodiments, a polishing pad includes a backing layer having an opening, a polishing layer having an opening aligned with the opening in the backing layer, a solid window of a first material in the opening of the polishing layer, a layer of a first adhesive material between the backing layer and the solid window, and a layer of a second adhesive material between the layer of the first adhesive material and the window.

Abstract: The thickness of a layer on a substrate is measured in-situ during chemical mechanical polishing. A light beam is divided through a window in a polishing pad, and the motion of the polishing pad relative to the substrate causes the light beam to move in a path across the substrate surface. An interference signal produced by the light beam reflecting off the substrate is monitored, and a plurality of intensity measurements are extracted from the interference signal. Each intensity measurement corresponds to a sampling zone in the path across the substrate surface. A radial position is determined for each sampling zone, and the intensity measurements are divided into a plurality of radial ranges according to the radial positions. The layer thickness is computed for each radial range from the intensity measurements associated with that radial range.

Abstract: A system includes a measuring station for positioning an eddy current probe proximate to a substrate in a substrate holder. The probe can produce a time-varying magnetic field, in order to induce eddy currents in one or more conductive regions of a substrate either prior to or subsequent to polishing. The eddy current signals are detected, and may be used to update one or more polishing parameters for a chemical mechanical polishing system. The substrate holder may be located in a number places; for example, in a substrate transfer system, a factory interface module, a cleaner, or in a portion of the chemical mechanical polishing system away from the polishing stations. Additional probes may be used.

Abstract: Methods and apparatus for monitoring a substrate surface during chemical mechanical polishing are disclosed.

Abstract: The thickness of a layer on a substrate is measured in-situ during chemical mechanical polishing. A light beam is divided through a window in a polishing pad, and the motion of the polishing pad relative to the substrate causes the light beam to move in a path across the substrate surface. An interference signal produced by the light beam reflecting off the substrate is monitored, and a plurality of intensity measurements are extracted from the interference signal. Each intensity measurement corresponds to a sampling zone in the path across the substrate surface. A radial position is determined for each sampling zone, and the intensity measurements are divided into a plurality of radial ranges according to the radial positions. The layer thickness is computed for each radial range from the intensity measurements associated with that radial range.

Abstract: An apparatus, as well as a method, determines an endpoint of chemical mechanical polishing a metal layer on a substrate. The method of the apparatus includes bringing a surface of a substrate into contact with a polishing pad that has a window; causing relative motion between the substrate and the polishing pad; directing a light beam through the window, the motion of the polishing pad relative to the substrate causing the light beam to move in a path across the substrate; detecting light beam reflections from the substrate and a retaining ring; generating reflection data associated with the light beam reflections; dividing the reflection data into a plurality of radial ranges; and identifying the predetermined pattern from the reflection data in the plurality of radial ranges to establish the endpoint.

Abstract: Polishing pads with a window, systems containing such polishing pads, and processes that use such polishing pads are disclosed.

Abstract: Polishing pads with a window, systems containing such polishing pads, and processes that use such polishing pads are disclosed. For example, a light beam having a wavelength between about 300 and 500 nm may be directed through a transparent portion of a polishing surface of a polishing pad. The polishing may be for a shallow trench isolation (STI) fabrication process, a spin-on glass fabrication process and a silicon-on-insulator (SOI) fabrication process.

Abstract: A polishing solution is dispensed onto a polishing pad that has a polishing surface, a substrate is brought into contact with the polishing surface, relative motion is created between the substrate and the polishing pad, a light beam is directed through a window in the polishing pad to impinge the substrate, and an intensity of a reflected light beam from the substrate is monitored. The polishing solution has a first refractive index, and the window has a second index of refraction that is approximately equal to the first index of refraction.