Abstract: A manufacturing method is provided which comprises forming recesses in a front side of a wafer, connecting a first temporary holding body to the front side of the recessed wafer, thereafter thinning the wafer from a back side, connecting a second temporary holding body to the back side, and thereafter removing the first temporary holding body.

Abstract: One or more embodiments relate to a method for making a semiconductor structure, comprising: providing a workpiece; forming a barrier layer over the workpiece; forming a separation layer over the barrier layer; forming a conductive layer over the separation layer; and wet etching the conductive layer.

Abstract: One or more embodiments relate to a method for making a semiconductor structure, comprising: providing a workpiece; forming a barrier layer over the workpiece; forming a separation layer over the barrier layer; forming a conductive layer over the separation layer; and wet etching the conductive layer.

Abstract: A semiconductor package includes a semiconductor chip having a first main face and side faces, an encapsulation covering at least the side faces of the semiconductor chip, and an electrical redistribution structure arranged over the first main face of the semiconductor chip. A first main surface of the semiconductor package includes a surface of the electrical redistribution structure and a surface of the encapsulation.

Abstract: A chip package is provided, the chip package including: a chip including at least one contact pad formed on a chip front side; an encapsulation material at least partially surrounding the chip and covering the at least one contact pad; and at least one electrical interconnect formed through the encapsulation material, wherein the at least one electrical interconnect is configured to electrically redirect the at least one contact pad from a chip package first side at the chip front side to at least one solder structure formed over a chip package second side at a chip back side.

Abstract: A chip package is provided, the chip package including: a chip including at least one contact pad formed on a chip front side; an encapsulation material at least partially surrounding the chip and covering the at least one contact pad; and at least one electrical interconnect formed through the encapsulation material, wherein the at least one electrical interconnect is configured to electrically redirect the at least one contact pad from a chip package first side at the chip front side to at least one solder structure formed over a chip package second side at a chip back side.

Abstract: One or more embodiments relate to a method for making a semiconductor structure, comprising: providing a workpiece; forming a barrier layer over the workpiece; forming a separation layer over the barrier layer; forming a conductive layer over the separation layer; and wet etching the conductive layer.