Patents by Inventor Andrei Los

Andrei Los has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240088319
    Abstract: A photovoltaic device includes a substrate structure and at least one Se-containing layer, such as a CdSeTe layer. A process for manufacturing the photovoltaic device includes forming the CdSeTe layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process, and vapor transport deposition process. The process can also include controlling a thickness range of the Se-containing layer.
    Type: Application
    Filed: November 13, 2023
    Publication date: March 14, 2024
    Applicant: First Solar, Inc.
    Inventors: Dan Damjanovic, Markus Gloeckler, Feng Liao, Andrei Los, Dan Mao, Benjamin Milliron, Gopal Mor, Rick Powell, Kenneth Ring, Aaron Roggelin, Jigish Trivedi, Zhibo Zhao
  • Publication number: 20230402554
    Abstract: Photovoltaic devices having transparent contact layers are described herein.
    Type: Application
    Filed: September 21, 2021
    Publication date: December 14, 2023
    Applicant: First Solar, Inc.
    Inventors: James Becker, Mark Hendryx, William Huber, Jason Kephart, Andrei Los, Wei Zhang
  • Patent number: 11817516
    Abstract: A photovoltaic device includes a substrate structure and at least one Se-containing layer, such as a CdSeTe layer. A process for manufacturing the photovoltaic device includes forming the CdSeTe layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process, and vapor transport deposition process. The process can also include controlling a thickness range of the Se-containing layer.
    Type: Grant
    Filed: October 25, 2019
    Date of Patent: November 14, 2023
    Assignee: First Solar, Inc.
    Inventors: Dan Damjanovic, Markus Gloeckler, Feng Liao, Andrei Los, Dan Mao, Benjamin Milliron, Gopal Mor, Rick Powell, Kenneth Ring, Aaron Roggelin, Jigish Trivedi, Zhibo Zhao
  • Patent number: 11450778
    Abstract: A doped photovoltaic device is presented. The photovoltaic device includes a semiconductor absorber layer or stack disposed between a front contact and a back contact. The absorber layer comprises cadmium, selenium, and tellurium doped with Ag, and optionally with Cu. The Ag dopant may be added to the absorber in amounts ranging from 5×1015/cm3 to 2.5×1017/cm3 via any of several methods of application before, during, or after deposition of the absorber layer. The photovoltaic device has improved Fill Factor and PMAX at higher Pr(=Isc*Voc product) values, e.g. about 160 W, which results in improved conversion efficiency compared to a device not doped with Ag. Improved PT may result from increased Isc, increased Voc, or both.
    Type: Grant
    Filed: May 31, 2017
    Date of Patent: September 20, 2022
    Assignee: First Solar, Inc.
    Inventors: Kenneth Ring, William H. Huber, Hongying Peng, Markus Gloeckler, Gopal Mor, Feng Liao, Zhibo Zhao, Andrei Los
  • Patent number: 11367805
    Abstract: Solar cells, absorber structures, back contact structures, and methods of making the same are described. The solar cells and absorber structures include a pseudomorphically strained electron reflector layer.
    Type: Grant
    Filed: July 12, 2017
    Date of Patent: June 21, 2022
    Assignee: First Solar, Inc.
    Inventors: Andrei Los, Roger Malik
  • Publication number: 20200058818
    Abstract: A photovoltaic device includes a substrate structure and at least one Se-containing layer, such as a CdSeTe layer. A process for manufacturing the photovoltaic device includes forming the CdSeTe layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process, and vapor transport deposition process. The process can also include controlling a thickness range of the Se-containing layer.
    Type: Application
    Filed: October 25, 2019
    Publication date: February 20, 2020
    Applicant: First Solar, Inc.
    Inventors: Dan Damjanovic, Markus Gloeckler, Feng Liao, Andrei Los, Dan Mao, Benjamin Milliron, Gopal Mor, Rick Powell, Kenneth Ring, Aaron Roggelin, Jigish Trivedi, Zhibo Zhao
  • Patent number: 10529883
    Abstract: A photovoltaic device includes a substrate structure and at least one Se-containing layer, such as a CdSeTe layer. A process for manufacturing the photovoltaic device includes forming the CdSeTe layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process, and vapor transport deposition process. The process can also include controlling a thickness range of the Se-containing layer.
    Type: Grant
    Filed: November 3, 2014
    Date of Patent: January 7, 2020
    Assignee: First Solar, Inc.
    Inventors: Dan Damjanovic, Markus Gloeckler, Feng Liao, Andrei Los, Dan Mao, Benjamin Milliron, Gopal Mor, Rick Powell, Kenneth Ring, Aaron Roggelin, Jigish Trivedi, Zhibo Zhao
  • Publication number: 20190363214
    Abstract: Solar cells, absorber structures, back contact structures, and methods of making the same are described. The solar cells and absorber structures include a pseudomorphically strained electron reflector layer.
    Type: Application
    Filed: July 12, 2017
    Publication date: November 28, 2019
    Applicant: First Solar, Inc.
    Inventors: Andrei Los, Roger Malik
  • Publication number: 20190363201
    Abstract: A doped photovoltaic device is presented. The photovoltaic device includes a semiconductor absorber layer or stack disposed between a front contact and a back contact. The absorber layer comprises cadmium, selenium, and tellurium doped with Ag, and optionally with Cu. The Ag dopant may be added to the absorber in amounts ranging from 5×1015/cm3 to 2.5×1017/cm3 via any of several methods of application before, during, or after deposition of the absorber layer. The photovoltaic device has improved Fill Factor and PMAX at higher Pr (=Isc*Voc product) values, e.g. about 160 W, which results in improved conversion efficiency compared to a device not doped with Ag. Improved PT may result from increased Isc, increased Voc, or both.
    Type: Application
    Filed: May 31, 2017
    Publication date: November 28, 2019
    Applicant: First Solar, Inc.
    Inventors: Kenneth Ring, William H. Huber, Hongying Peng, Markus Gloeckler, Gopal Mor, Feng Liao, Zhibo Zhao, Andrei Los
  • Patent number: 10461207
    Abstract: A photovoltaic device includes a substrate structure and at least one Se-containing layer, such as a CdSeTe layer. A process for manufacturing the photovoltaic device includes forming the CdSeTe layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process, and vapor transport deposition process. The process can also include controlling a thickness range of the Se-containing layer.
    Type: Grant
    Filed: January 22, 2015
    Date of Patent: October 29, 2019
    Assignee: First Solar, Inc.
    Inventors: Dan Damjanovic, Markus Gloeckler, Feng Liao, Andrei Los, Dan Mao, Benjamin Milliron, Gopal Mor, Rick Powell, Kenneth Ring, Aaron Roggelin, Jigish Trivedi, Zhibo Zhao
  • Patent number: 9406829
    Abstract: A method to improve operation of a CdTe-based photovoltaic device is disclosed, the method comprising the steps of depositing a semiconductor absorber layer adjacent to a substrate, depositing a semiconductor buffer layer adjacent to the semiconductor layer, and annealing at least one of the semiconductor absorber layer and the semiconductor buffer layer with one of a laser and a flash lamp.
    Type: Grant
    Filed: June 27, 2014
    Date of Patent: August 2, 2016
    Assignee: First Solar, Inc.
    Inventors: Pratima Addepalli, Benyamin Buller, Markus Gloeckler, Akhlesh Gupta, David Hwang, Andrei Los, Rick Powell, Rui Shao, Gang Xiong, Ming Lun Yu, San Yu, Zhibo Zhao
  • Publication number: 20160126395
    Abstract: A photovoltaic device includes a substrate structure and at least one Se-containing layer, such as a CdSeTe layer. A process for manufacturing the photovoltaic device includes forming the CdSeTe layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process, and vapor transport deposition process. The process can also include controlling a thickness range of the Se-containing layer.
    Type: Application
    Filed: November 3, 2014
    Publication date: May 5, 2016
    Inventors: Dan Damjanovic, Markus Gloeckler, Feng Liao, Andrei Los, Dan Mao, Benjamin Milliron, Gopal Mor, Rick Powell, Kenneth Ring, Aaron Roggelin, Jigish Trivedi, Zhibo Zhao
  • Publication number: 20160126396
    Abstract: A photovoltaic device includes a substrate structure and at least one Se-containing layer, such as a CdSeTe layer. A process for manufacturing the photovoltaic device includes forming the CdSeTe layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process, and vapor transport deposition process. The process can also include controlling a thickness range of the Se-containing layer.
    Type: Application
    Filed: January 22, 2015
    Publication date: May 5, 2016
    Inventors: Dan Damjanovic, Markus Gloeckler, Feng Liao, Andrei Los, Dan Mao, Benjamin Milliron, Gopal Mor, Rick Powell, Kenneth Ring, Aaron Roggelin, Jigish Trivedi, Zhibo Zhao
  • Publication number: 20150004743
    Abstract: A method to improve operation of a CdTe-based photovoltaic device is disclosed, the method comprising the steps of depositing a semiconductor absorber layer adjacent to a substrate, depositing a semiconductor buffer layer adjacent to the semiconductor layer, and annealing at least one of the semiconductor absorber layer and the semiconductor buffer layer with one of a laser and a flash lamp.
    Type: Application
    Filed: June 27, 2014
    Publication date: January 1, 2015
    Inventors: Pratima Addepalli, Benyamin Buller, Markus Gloeckler, Akhlesh Gupta, David Hwang, Andrei Los, Rick Powell, Rui Shao, Gang Xiong, Ming Lun Yu, San Yu, Zhibo Zhao