Abstract: Disclosed is an integrated blade having coupled blades for wind turbine (IBWT) device. The disclosed solution provides a significant increase of generated power realized mainly by using coupled blades. The coupled blades are situated close to each other and oriented near-parallel to each other. They are mounted in the same body/frame and only one fixation mechanism is needed to fix the device/construction on the rotation rod connected to a turbine.

Abstract: The system comprises a processor for dividing an image into a series of pixels, grouping a selected numbers of pixels into a pixel group and a circuit for providing power to individual pixels in the pixel group in succession, at a switching rate controlled by the processor, the switching rate being fast enough that an observer sees all pixels in a pixel group being energized at substantially the same time.

Abstract: A MEMS switch comprises a top conductor and at least one first insulator layer having a lateral opening. The at least one first insulator layer hermetically seals the top conductor. At least one second insulator layer is positioned below the at least one first insulator layer such that at least one vacuum gap is formed within the lateral opening between the top conductor and the at least one second insulator layer. The at least one vacuum gap has a thickness in the range 0.5 ? to 100 ? when the top conductor is at rest. The thickness of the at least one vacuum gap varies when the top conductor is moved. The insulator layer has at least one opening that exposes a conducting area of at least one contact conductor within the second insulator layer.

Abstract: A MEMS switch comprises a top cantilevered conductor that moves downwardly. At least one first insulator layer is positioned below the top cantilevered conductor. At least one second insulator layer is positioned below the at least one first insulator layer such that at least one gap is formed between the top cantilevered conductor and the at least one second insulator layer. The gap has a thickness in the range 0.5 ? to 100 ? when the top cantilevered conductor is at rest. The thickness of the at least one gap decreases when the top cantilevered conductor is moved downwardly. At least one contact conductor is positioned below the top cantilevered conductor. The second insulator layer has at least one opening that exposes a conducting area of the at least one contact conductor within the second insulator layer.

Abstract: A resonant MEMS device that detects photons, particles and small forces including atomic forces is disclosed. The device comprises a planar substrate 1, two electrodes 2 and 3 on top of the substrate, a resonant micro-electromechanical (MEMS) structure 6, such as a cantilever, anchored to first electrode 2 and arranged above the second electrode 3 separated from this electrode with an ultrathin transition layer 5. The resonant MEMS structure is working at its natural resonant frequency. The resonant oscillation of the cantilever can be initiated by applying AC voltage with frequency equaling the resonant frequency of the MEMS structure. A constant voltage is applied between the cantilever and the second electrode. The cantilever oscillates at very small amplitude ranging from few ?ngstrom (?) to several nm. During operation, a constant component of the electrical current is measured between the cantilever and the second electrode 3.

Abstract: A resonant MEMS device that detects photons, particles and small forces including atomic forces is disclosed. The device comprises a planar substrate 1, two electrodes 2 and 3 on top of the substrate, a resonant micro-electromechanical (MEMS) structure 6, such as a cantilever, anchored to first electrode 2 and arranged above the second electrode 3 separated from this electrode with an ultrathin transition layer 5. The resonant MEMS structure is working at its natural resonant frequency. The resonant oscillation of the cantilever can be initiated by applying AC voltage with frequency equaling the resonant frequency of the MEMS structure. A constant voltage is applied between the cantilever and the second electrode. The cantilever oscillates at very small amplitude ranging from few ?ngstrom (?) to several nm. During operation, a constant component of the electrical current is measured between the cantilever and the second electrode 3.

Abstract: A method and apparatus for testing a static random access memory (SRAM) array for the presence of weak defects. A 0/1 ratio is first written to the memory array (step 100), following which the bit lines BL and BLB are pre-charged and equalized to a threshold detection voltage (step 102). The threshold detection voltage is programmed according to the 0/1 ratio of cells, so as to take into account specific cell criterion and/or characteristics. Next, the word lines associated with all of the cells in the array are enabled substantially simultaneously (step 104), the bit lines are then shorted together (step 106), the word lines are disabled (step 108) and the bit lines are released (step 110). Following these steps, the contents of the SRAM array are read and compared against the original 0/1 ratio (step 112). 10 Any cells whose contents do not match the original 0/1 ratio (i.e. those whose contents have flipped) are marked or otherwise identified as “weak” (step 114).

Abstract: A method and apparatus for testing a static random access memory (SRAM) array for the presence of weak defects. A 0/1 ratio is first written to the memory array (step 100), following which the bit lines BL and BLB are pre-charged and equalized to a threshold detection voltage (step 102). The threshold detection voltage is programmed according to the 0/1 ratio of cells, so as to take into account specific cell criterion and/or characteristics. Next, the word lines associated with all of the cells in the array are enabled substantially simultaneously (step 104), the bit lines are then shorted together (step 106), the word lines are disabled (step 108) and the bit lines are released (step 110). Following these steps, the contents of the SRAM array are read and compared against the original 0/1 ratio (step 112). 10 Any cells whose contents do not match the original 0/1 ratio (i.e. those whose contents have flipped) are marked or otherwise identified as “weak” (step 114).