Abstract: Ultra-miniaturized THz spectrometer/multi-channel receiver devices are provided. THz communication devices employ a THz transmitter, a THz receiver and a modulator, wherein the THz transmitter is configured to introduce a THz signal to the modulator and the THz receiver is configured to receive the THz signal from the modulator and demodulate the signal. Communication systems and methods employing the THz spectrometer/multi-channel receiver devices enable secure communications. Portable THz emitter devices are provided employing semiconductor lasers and a nonlinear birefringent waveguide monolithically integrated on the same substrate.

Abstract: Methods and devices are provided in which vertically integrated devices are grown in the form of semiconductor (e.g., Ge, GaAs, InGaAs, etc.) one-dimensional nanowires with typical diameter of from about 5 nm to about 50 nm and aspect ratio of about 1:10. In one embodiment a nanometer-scale diameter pillar extending from a silicon substrate is employed as a “seed” for fabricating vertical, one-dimensional hetero-structures (and/or hetero-devices) containing semiconductor materials with lattice and thermal expansion mismatches to silicon.

Abstract: The present invention provides methods of manufacturing and integrating optical devices. In one embodiment, a method of integrating an optical device may include forming a first device over a substrate, and forming a second device over the substrate and adjacent the first device with a deposition gas having an etchant selective to a deposited component of the deposition gas.

Abstract: The present invention provides methods of manufacturing and integrating optical devices. In one embodiment, a method of integrating an optical device may include forming a first device over a substrate, and forming a second device over the substrate and adjacent the first device with a deposition gas having an etchant selective to a deposited component of the deposition gas.