Patents by Inventor Andrew C. Wong

Andrew C. Wong has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11993845
    Abstract: Methods for depositing a metal containing material formed on a certain material of a substrate using an atomic layer deposition process for semiconductor applications are provided. In one embodiment, a method of forming a metal containing material on a substrate comprises pulsing a first gas precursor comprising a metal containing precursor to a surface of a substrate, pulsing a second gas precursor comprising a silicon containing precursor to the surface of the substrate, forming a metal containing material selectively on a first material of the substrate, and thermal annealing the metal containing material formed on the substrate.
    Type: Grant
    Filed: March 4, 2020
    Date of Patent: May 28, 2024
    Assignee: Applied Materials, Inc.
    Inventors: Jong Choi, Christopher Ahles, Andrew C. Kummel, Keith Tatseun Wong, Srinivas D. Nemani
  • Patent number: 11993842
    Abstract: Embodiments described and discussed herein provide methods for selectively depositing a metal oxides on a substrate. In one or more embodiments, methods for forming a metal oxide material includes positioning a substrate within a processing chamber, where the substrate has passivated and non-passivated surfaces, exposing the substrate to a first metal alkoxide precursor to selectively deposit a first metal oxide layer on or over the non-passivated surface, and exposing the substrate to a second metal alkoxide precursor to selectively deposit a second metal oxide layer on the first metal oxide layer. The method also includes sequentially repeating exposing the substrate to the first and second metal alkoxide precursors to produce a laminate film containing alternating layers of the first and second metal oxide layers. Each of the first and second metal alkoxide precursors contains a different metal selected from titanium, zirconium, hafnium, aluminum, or lanthanum.
    Type: Grant
    Filed: November 30, 2022
    Date of Patent: May 28, 2024
    Assignees: APPLIED MATERIALS, INC., THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
    Inventors: Keith Tatseun Wong, Srinivas D. Nemani, Andrew C. Kummel, James Huang, Yunil Cho
  • Patent number: 11994067
    Abstract: An aircraft gas turbine engine includes a heat exchanger module, and a core engine including an intermediate-pressure compressor, a high-pressure compressor, a high pressure turbine, and a low-pressure turbine. The high-pressure compressor is connected to the high-pressure turbine by a first shaft, and the intermediate-pressure compressor is connected to the low-pressure turbine by a second shaft. The heat exchanger module includes a central hub and heat transfer elements extending radially from the central hub and spaced in a circumferential array, for transferring heat energy from a fluid within the heat transfer elements to an inlet airflow passing over the heat transfer elements prior to entry of the airflow into an inlet to the core engine. The gas turbine engine further includes a first electric machine connected to the first shaft and positioned downstream of the heat exchanger module, and a second electric machines connected to the second shaft.
    Type: Grant
    Filed: September 8, 2022
    Date of Patent: May 28, 2024
    Assignee: ROLLS-ROYCE PLC
    Inventors: Natalie C Wong, Jonathan A Cherry, Paul R Davies, David A Jones, Andrew J Newman, Benjamin J Sellers, Stephen J Bradbrook
  • Publication number: 20240120195
    Abstract: A method includes forming a conductive material on a first dielectric layer, exposing the conductive material to aniline to produce a passivated surface of the conductive material, and after exposing the conductive material to aniline, forming a second dielectric layer on the first dielectric layer using a deposition process. The deposition process is a water-free and plasma-free deposition process, and the second dielectric layer does not form on the passivated surface of the conductive material.
    Type: Application
    Filed: October 6, 2022
    Publication date: April 11, 2024
    Inventors: Keith T. Wong, Srinivas D. Nemani, Ellie Y. Yieh, Andrew C. Kummel, Yunil Cho, James Huang
  • Patent number: 4651154
    Abstract: A NAVSTAR receiver in which the received signals are processed to produce digitized quadrature signals at zero i.f. Baseband phasor rotation to effect Doppler tracking in the receiver loop is accomplished by deriving digital signals representing sin .omega.T and cos .omega.T for the required rotation angle .omega.T, multiplying the quadrature signals separately and summing the outputs according to the algorithm I.sup.1 =I cos .omega.T+Q sin .omega.T and Q.sup.1 =Q cos .omega.T-I sin .omega.T, where I & Q are the digitized quadrature signals.
    Type: Grant
    Filed: February 27, 1985
    Date of Patent: March 17, 1987
    Assignee: Standard Telephone and Cables Public Limited Company
    Inventors: Andrew C. Wong, Graham R. Fearnhead, Simon J. Gale
  • Patent number: 4598293
    Abstract: An intruder detector system employing Doppler radar consists of an encoder for modulating RF pulses with a cyclic pulse code, the code being cycled at a frequency equal to the RF pulse frequency and the pulses being modulated on a VHF carrier for transmission along one of a pair of parallel radiating cables. The signal received from the other cable is demodulated and digitized by a zero crossing detector functioning as a 1-bit analog-to-digital converter. A bank of exclusive-OR gates functioning as 1-bit correlators then simultaneously correlates each successive bit of the digitized signal with the values of the respective bits in each fixed position of the transmitted code sequence.
    Type: Grant
    Filed: May 24, 1985
    Date of Patent: July 1, 1986
    Assignee: International Standard Electric Corporation
    Inventor: Andrew C. Wong