Abstract: The present invention provides compounds, compositions thereof, and methods of using the same for the inhibition of USP30, and the treatment of USP30-mediated disorders.

Abstract: The present invention provides compounds, compositions thereof, and methods of using the same for the inhibition of USP30, and the treatment of USP30-mediated disorders.

Abstract: Techniques and systems are disclosed for enabling a simulation environment for experimental design. The interactions of a configuration of molecules inside a biological structure or system, such as a cell (e.g., a neuron) or virtual test tube, are modeled using message-based techniques to communicate between molecules proximal to one another in a virtual 3-D geometric space. Some techniques and systems allow distributed processing of the individual molecular interactions across a plurality of work nodes. Some techniques and systems allow the storage of detailed information about the current state of the simulation of the biological model for each discrete time slice. This enables the ability for a 4-D playback/review of any particular spatial or temporal focus area of the simulation.

Abstract: Techniques and systems are disclosed for enabling a simulation environment for experimental design. The interactions of a configuration of molecules inside a biological structure or system, such as a cell (e.g., a neuron) or virtual test tube, are modeled using message-based techniques to communicate between molecules proximal to one another in a virtual 3-D geometric space. Some techniques and systems allow distributed processing of the individual molecular interactions across a plurality of work nodes. Some techniques and systems allow the storage of detailed information about the current state of the simulation of the biological model for each discrete time slice. This enables the ability for a 4-D playback/review of any particular spatial or temporal focus area of the simulation.

Abstract: A semiconductor device comprising a silicon substrate on which is grown a <100 nm thick epilayer of AlAs or related compound, followed by a compound semiconductor other than GaN buffer layer. Further III-V compound semiconductor structures can be epitaxially grown on top. The AlAs epilayer reduces the formation and propagation of defects from the interface with the silicon, and so can improve the performance of an active structure grown on top.

Abstract: Techniques and systems are disclosed for enabling a simulation environment for experimental design. The interactions of a configuration of molecules inside a biological structure or system, such as a cell (e.g., a neuron) or virtual test tube, are modeled using message-based techniques to communicate between molecules proximal to one another in a virtual 3-D geometric space. Some techniques and systems allow distributed processing of the individual molecular interactions across a plurality of work nodes. Some techniques and systems allow the storage of detailed information about the current state of the simulation of the biological model for each discrete time slice. This enables the ability for a 4-D playback/review of any particular spatial or temporal focus area of the simulation.

Abstract: A semiconductor device comprising a silicon substrate on which is grown a <100 nm thick epilayer of AlAs or related compound, followed by a compound semiconductor other than GaN buffer layer. Further III-V compound semiconductor structures can be epitaxially grown on top. The AlAs epilayer reduces the formation and propagation of defects from the interface with the silicon, and so can improve the performance of an active structure grown on top.

Abstract: A semiconductor device comprising a silicon substrate on which is grown a <100 nm thick epilayer of AlAs or related compound, followed by a compound semiconductor other than GaN buffer layer. Further III-V compound semiconductor structures can be epitaxially grown on top. The AlAs epilayer reduces the formation and propagation of defects from the interface with the silicon, and so can improve the performance of an active structure grown on top.

Abstract: A semiconductor device comprising a silicon substrate on which is grown a <100 nm thick epilayer of AlAs or related compound, followed by a compound semiconductor other than GaN buffer layer. Further III-V compound semiconductor structures can be epitaxially grown on top. The AlAs epilayer reduces the formation and propagation of defects from the interface with the silicon, and so can improve the performance of an active structure grown on top.