Abstract: According to an embodiment of the present invention, a method, system, and computer program product for preparing a CZ state for use in magic state distillation. The embodiment may include initializing a code state across data qubits. The embodiment may include measuring a CZ operator of the codes state on at least one ancilla qubit proximal to the data qubits. The embodiment may include performing additional quantum operations with the CZ state based on the measurement of the at least one ancilla qubit.

Abstract: A system and method for enhancing image quality. The system and method acquire a machine learning model trained for correlating one or more training images and one or more training design images. The system and method receive one or more sample specimen images corresponding to one or more features of a sample specimen. The system and method enhance the one or more sample specimen images by generating one or more enhanced images with the machine learning model based on at least the one or more sample specimen images.

Abstract: A characterization system for inspecting or performing metrology on a layer within a semiconductor stack is disclosed. The system includes an imaging sub-system configured to acquire image data from a semiconductor stack including one or more layers. The semiconductor stack includes a metal layer having a thickness between 0.5 and 10 nm deposited on a layer of the semiconductor stack to form a reflective surface on the layer. The system includes a controller. The controller is configured to receive image data of the reflective surface on the layer of the substrate stack and identify one or more defects or one or more structures within the layer based on illumination reflected from the reflective surface.

Abstract: Information from metrology tools can be used during inspection or review with a scanning electron microscope. Metrology measurements of a wafer are interpolated and/or extrapolated over a field, which creates modified metrology data. The modified metrology data is associated with defect attributes from inspection measurements of a wafer. A wafer review sampling plan is generated based on the defect attributes and the modified metrology data. The wafer review sampling plan can be used during review of a wafer using the scanning electron microscope.

Abstract: A system, method, and computer program product are provided for systematic and stochastic characterization of pattern defects identified from a fabricated component. In use, a plurality of pattern defects detected from a fabricated component are identified. Additionally, attributes of each of the pattern defects are analyzed, based on predefined criteria. Further, a first set of pattern defects of the plurality of pattern defects are determined, from the analysis, to be systematic pattern defects, and a second set of pattern defects of the plurality of pattern defects are determined, from the analysis, to be stochastic pattern defects. Moreover, a first action is performed for the determined systematic pattern defects and a second action is performed for the determined stochastic pattern defects.

Abstract: Information from metrology tools can be used during inspection or review with a scanning electron microscope. Metrology measurements of a wafer are interpolated and/or extrapolated over a field, which creates modified metrology data. The modified metrology data is associated with defect attributes from inspection measurements of a wafer. A wafer review sampling plan is generated based on the defect attributes and the modified metrology data. The wafer review sampling plan can be used during review of a wafer using the scanning electron microscope.

Abstract: A system, method, and computer program product are provided for systematic and stochastic characterization of pattern defects identified from a fabricated component. In use, a plurality of pattern defects detected from a fabricated component are identified. Additionally, attributes of each of the pattern defects are analyzed, based on predefined criteria. Further, a first set of pattern defects of the plurality of pattern defects are determined, from the analysis, to be systematic pattern defects, and a second set of pattern defects of the plurality of pattern defects are determined, from the analysis, to be stochastic pattern defects. Moreover, a first action is performed for the determined systematic pattern defects and a second action is performed for the determined stochastic pattern defects.

Abstract: A design aware system, method, and computer program product are provided for detecting overlay-related defects in multi-patterned fabricated devices. In use, a design of a multi-patterned fabricated device is received by a computer system. Then, the computer system automatically determines from the design one or more areas of the design that are prone to causing overlay errors. Further, an indication of the determined one or more areas is output by the computer system to an inspection system for use in inspecting a multi-patterned device fabricated in accordance with the design.

Abstract: A design aware system, method, and computer program product are provided for detecting overlay-related defects in multi-patterned fabricated devices. In use, a design of a multi-patterned fabricated device is received by a computer system. Then, the computer system automatically determines from the design one or more areas of the design that are prone to causing overlay errors. Further, an indication of the determined one or more areas is output by the computer system to an inspection system for use in inspecting a multi-patterned device fabricated in accordance with the design.