Abstract: A device comprises a first superconducting quantum bit, a second superconducting quantum bit, and a coupler circuit. The first superconducting quantum bit comprises a superconducting tunnel junction and a shunt inductor which form a first superconducting loop. The second superconducting quantum bit comprises a superconducting tunnel junction and a shunt inductor which form a second superconducting loop. The coupler circuit is coupled between the first and second superconducting quantum bits. The coupler circuit is configured to implement an entanglement gate operation between the first and second superconducting quantum bits through exchange interactions between the coupler circuit and the first superconducting quantum bit and the second superconducting quantum bit, when the coupler circuit is driven by a control signal.

Abstract: Systems and techniques that facilitate space-saving coupler arm arrangement for superconducting qubits are provided. In various embodiments, a device can comprise a superconducting qubit. In various aspects, the superconducting qubit can be capacitively coupled to two or more coupler arms. In various instances, a parasitic capacitance between the two or more coupler arms can be within an order of magnitude of a capacitance between the superconducting qubit and at least one of the two or more coupler arms. In various cases, the parasitic capacitance can arise due to a physical proximity between the two or more coupler arms.

Abstract: One or more systems, devices and/or methods of use provided herein relate to a device that can facilitate reduction of inter-qubit cross talk and/or allow for increased interaction strengths between qubits as compared to existing technologies. A device can comprise a qubit lattice comprising a plurality of repeated and connected unit cells, and the unit cells comprising individual sets of qubits, wherein the unit cells comprise different cross talk groups of qubits having qubit islands connected together by couplers in different orders, and wherein the different cross talk groups are repeated among the unit cells of the qubit lattice. A device can comprise a qubit lattice comprising a plurality of different, interconnected cross talk groups of qubits, wherein the different cross talk groups are repeated within the qubit lattice.

Abstract: A device comprises first and second qubits, and a qubit coupler coupled between the first and second qubits. The second qubit comprises first and second modes with the first mode configured to store data. The qubit coupler comprises first and second modes, and operates in a first state or second state. In the first state, the first qubit is exchange coupled to the first mode of the qubit coupler, and the second mode of the second qubit is exchange coupled to the second mode of the qubit coupler, to suppress interaction between the first and second qubits. In the second state, the first qubit and the first mode of the second qubit are exchange coupled to both the first and second modes the qubit coupler, to enable interaction between the first and second qubits for an entanglement gate operation in response to a control signal applied to the qubit coupler.

Abstract: Devices and/or computer-implemented methods to facilitate a multipole filter on a quantum device with multiplexing capability and signal separation to mitigate crosstalk are provided. According to an embodiment, a device can comprise an interposer substrate comprising a readout resonator. The device can further comprise a qubit chip substrate comprising a qubit coupled to the readout resonator and to a multipole filter.

Abstract: The present invention provides, among other things, methods of treatment of Metachromatic Leukodystrophy Disease (MLD) and compositions comprising recombinant arylsulfatase A (ASA) protein using enzyme replacement therapy.

Abstract: Techniques for fabricating a semiconductor chip having a curved surface include placing a substantially flat photonic sensor chip on a recessed surface of a mold such that an active region of the photonic sensor chip at least partially covers a concave central region of the mold and an inactive region of the photonic sensor chip at least partially covers a convex peripheral region of the mold. The mold has a radially varying curvature and the recessed surface includes the concave central region and the convex peripheral region concentrically surrounding the concave central region. Pressure may be applied on the photonic sensor chip to press and bend the photonic sensor chip into the mold.

Abstract: Zwitterionic polymer and mixed charge copolymer bioconjugates, methods for making and using the bioconjugates.

Abstract: Zwitterionic polymer and mixed charge copolymer bioconjugates, methods for making and using the bioconjugates.

Abstract: Techniques for fabricating a semiconductor chip having a curved surface include placing a substantially flat photonic sensor chip on a recessed surface of a mold such that an active region of the photonic sensor chip at least partially covers a concave central region of the mold and an inactive region of the photonic sensor chip at least partially covers a convex peripheral region of the mold. The mold has a radially varying curvature and the recessed surface includes the concave central region and the convex peripheral region concentrically surrounding the concave central region. Pressure may be applied on the photonic sensor chip to press and bend the photonic sensor chip into the mold.

Abstract: Techniques for fabricating a semiconductor die having a curved surface can include placing a substantially flat semiconductor die in a recess surface of a concave mold such that corners or edges of the semiconductor die are unconstrained or are the only portions of the semiconductor die in physical contact with the concave mold. The semiconductor die can include through-die cut lines that can lead to substantially less tension in the semiconductor die as compared to the case where the semiconductor die does not include through-die cut lines. Accordingly, such through-die cut lines can allow for achieving relatively large curvatures.

Abstract: Techniques for fabricating a semiconductor die having a curved surface can include placing a substantially flat semiconductor die in a recess surface of a concave mold such that corners or edges of the semiconductor die are unconstrained or are the only portions of the semiconductor die in physical contact with the concave mold. The semiconductor die can include through-die cut lines that can lead to substantially less tension in the semiconductor die as compared to the case where the semiconductor die does not include through-die cut lines. Accordingly, such through-die cut lines can allow for achieving relatively large curvatures.

Abstract: Techniques for fabricating a semiconductor chip having a curved surface may include placing a substantially flat semiconductor chip in a recess surface of a concave mold such that corners or edges of the semiconductor chip are unconstrained or are the only portions of the semiconductor chip in physical contact with the concave mold; and bending the substantially flat semiconductor chip to form a concave shaped semiconductor chip by applying a force on the semiconductor chip toward the bottom of the recessed surface. The corners or edges of the semiconductor chip move or slide relative to the recess surface during the bending.

Abstract: Marine coatings including cationic polymers hydrolyzable to nonfouling zwitterionic polymers, coated marine surfaces, and methods for making and using the marine coatings.

Abstract: Techniques for fabricating a semiconductor chip having a curved surface include placing a substantially flat photonic sensor chip on a recessed surface of a mold such that an active region of the photonic sensor chip at least partially covers a concave central region of the mold and an inactive region of the photonic sensor chip at least partially covers a convex peripheral region of the mold. The mold has a radially varying curvature and the recessed surface includes the concave central region and the convex peripheral region concentrically surrounding the concave central region. Pressure may be applied on the photonic sensor chip to press and bend the photonic sensor chip into the mold.

Abstract: Techniques for fabricating a semiconductor chip having a curved surface may include placing a substantially flat semiconductor chip in a recess surface of a concave mold such that corners or edges of the semiconductor chip are unconstrained or are the only portions of the semiconductor chip in physical contact with the concave mold; and bending the substantially flat semiconductor chip to form a concave shaped semiconductor chip by applying a force on the semiconductor chip toward the bottom of the recessed surface. The corners or edges of the semiconductor chip move or slide relative to the recess surface during the bending.

Abstract: Zwitterionic polymer and mixed charge copolymer bioconjugates, methods for making and using the bioconjugates.

Abstract: Zwitterionic polymer and mixed charge copolymer bioconjugates, methods for making and using the bioconjugates.

Abstract: Zwitterionic polymer and mixed charge copolymer bioconjugates, methods for making and using the bioconjugates.

Abstract: Apparatus and associated methods for actuating variable stiffness material (VSM) structures and achieving deformation of the structures. The apparatus and the associated methods use internal embedded actuation elements and/or externally attached elements to the VSM structures to achieve the desired deformation. In particular, the actuation can be changed due to the variable stiffness nature of the materials. That is, the invention provides the ability to control the deformation of structures using local stiffness control over subregions of the component in addition to or in substitution for actuation. Furthermore, the invention exploits the variable stiffness properties of the VSM structures to enable new functionalities impossible to realize with conventional constant stiffness materials.