Patents by Inventor Andrew Kretzschmar

Andrew Kretzschmar has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240170321
    Abstract: The present disclosure relates to transfer apparatus, and related components and methods, for transferring substrates in relation to substrate processing operations for semiconductor manufacturing. In one implementation, a transfer apparatus for moving a substrate in relation to semiconductor manufacturing includes a body, and a plurality of substrate supports inserted at least partially into the body. Each of the plurality of substrate supports includes an inner segment, and one or more fins extending outwardly relative to the inner segment. Each of the inner segment and the one or more fins includes silicon carbide (SiC).
    Type: Application
    Filed: November 21, 2022
    Publication date: May 23, 2024
    Inventors: Zhepeng CONG, Ashur J. ATANOS, Masato ISHII, Andrew KRETZSCHMAR
  • Publication number: 20210134588
    Abstract: A method for forming a forming a semiconductor structure is disclosed. The method may include: forming a silicon oxide layer on a surface of a substrate, depositing a silicon germanium (Si1?xGex) seed layer directly on the silicon oxide layer, and depositing a germanium (Ge) layer directly on the silicon germanium (Si1?xGex) seed layer. Semiconductor structures including a germanium (Ge) layer deposited on silicon oxide utilizing an intermediate silicon germanium (Si1?xGex) seed layer are also disclosed.
    Type: Application
    Filed: January 11, 2021
    Publication date: May 6, 2021
    Inventors: David Kohen, Harald Benjamin Profijt, Andrew Kretzschmar
  • Patent number: 10923344
    Abstract: A method for forming a forming a semiconductor structure is disclosed. The method may include: forming a silicon oxide layer on a surface of a substrate, depositing a silicon germanium (Si1-xGex) seed layer directly on the silicon oxide layer, and depositing a germanium (Ge) layer directly on the silicon germanium (Si1-xGex) seed layer. Semiconductor structures including a germanium (Ge) layer deposited on silicon oxide utilizing an intermediate silicon germanium (Si1-xGex) seed layer are also disclosed.
    Type: Grant
    Filed: October 30, 2017
    Date of Patent: February 16, 2021
    Assignee: ASM IP Holding B.V.
    Inventors: David Kohen, Harald Benjamin Profijt, Andrew Kretzschmar
  • Publication number: 20190131124
    Abstract: A method for forming a forming a semiconductor structure is disclosed. The method may include: forming a silicon oxide layer on a surface of a substrate, depositing a silicon germanium (Si1-xGex) seed layer directly on the silicon oxide layer, and depositing a germanium (Ge) layer directly on the silicon germanium (Si1-xGex) seed layer. Semiconductor structures including a germanium (Ge) layer deposited on silicon oxide utilizing an intermediate silicon germanium (Si1-xGex) seed layer are also disclosed.
    Type: Application
    Filed: October 30, 2017
    Publication date: May 2, 2019
    Inventors: David Kohen, Harald Benjamin Profijt, Andrew Kretzschmar