Abstract: A pressure sensitive adhesive (PSA) comprising: (A) 50 to 99 weight percent (wt %) of a partially aromatic polyester comprising at least two hydroxyl groups per polymer chain and having a: (1) Storage modulus of >0.33 Megapascals (MPa) at 23° C., (2) Mn of 20,000 to 200,000 grams per mole (g/mol), and (3) Glass transition (Tg) temperature of ?60° C. to 20° C.; (B) 1 to 40 wt % of at least one of a plasticizer or tackifier; and (C) 0.1 to 10 wt % of a crosslinker with a functionality of >2.5; with the provisos that the PSA has a: (i) Tg of ?60° C. to 10° C.; (ii) Storage modulus of <0.33 MPa at 23° C.; (iii) Rubbery plateau in excess of its Tg; and (iv) Melt flow in excess of 70° C.

Abstract: Objects of arbitrary shape and size are marked by a method using a thermal transfer ribbon. The method comprises the steps of creating a graphic on a thermal transfer ribbon, joining the graphic-bearing ribbon to a receptor substrate, removing the graphic-bearing ribbon from the receptor substrate, placing the graphic-bearing ribbon on a target object with the graphic in contact with a surface of the target object, applying sufficient heat and pressure to the graphic-bearing ribbon such that the graphic is transferred from the ribbon to the surface of the target object, and removing the ribbon from the surface of the target object.

Abstract: A pressure sensitive adhesive (PSA) comprising: (A) 50 to 99 weight percent (wt %) of a partially aromatic polyester comprising at least two hydroxyl groups per polymer chain and having a: (1) Storage modulus of >0.33 Megapascals (MPa) at 23° C., (2) Mn of 20,000 to 200,000 grams per mole (g/mol), and (3) Glass transition (Tg) temperature of ?60° C. to 20° C.; (B) 1 to 40 wt % of at least one of a plasticizer or tackifier; and (C) 0.1 to 10 wt % of a crosslinker with a functionality of >2.5; with the provisos that the PSA has a: (i) Tg of ?60° C. to 10° C.; (ii) Storage modulus of <0.33 MPa at 23° C.; (iii) Rubbery plateau in excess of its Tg; and (iv) Melt flow in excess of 70° C.

Abstract: The present invention provides metal silicide nanowires, including metallic, semiconducting, and ferromagnetic semiconducting transition metal silicide nanowires. The nanowires are grown using either chemical vapor deposition (CVD) or chemical vapor transport (CVT) on silicon substrates covered with a thin silicon oxide film, the oxide film desirably having a thickness of no greater than about 5 nm and, desirably, no more than about 2 nm (e.g., about 1-2 nm). The metal silicide nanowires and heterostructures made from the nanowires are well-suited for use in CMOS compatible wire-like electronic, photonic, and spintronic devices.

Abstract: The present invention provides metal silicide nanowires, including metallic, semiconducting, and ferromagnetic semiconducting transition metal silicide nanowires. The nanowires are grown using either chemical vapor deposition (CVD) or chemical vapor transport (CVT) on silicon substrates covered with a thin silicon oxide film, the oxide film desirably having a thickness of no greater than about 5 nm and, desirably, no more than about 2 nm (e.g., about 1-2 nm). The metal silicide nanowires and heterostructures made from the nanowires are well-suited for use in CMOS compatible wire-like electronic, photonic, and spintronic devices.

Abstract: The present invention provides metal silicide nanowires, including metallic, semiconducting, and ferromagnetic semiconducting transition metal silicide nanowires. The nanowires are grown using either chemical vapor deposition (CVD) or chemical vapor transport (CVT) on silicon substrates covered with a thin silicon oxide film, the oxide film desirably having a thickness of no greater than about 5 nm and, desirably, no more than about 2 nm (e.g., about 1-2 nm). The metal silicide nanowires and heterostructures made from the nanowires are well-suited for use in CMOS compatible wire-like electronic, photonic, and spintronic devices.

Abstract: The present invention provides metal silicide nanowires, including metallic, semiconducting, and ferromagnetic semiconducting transition metal silicide nanowires. The nanowires are grown using either chemical vapor deposition (CVD) or chemical vapor transport (CVT) on silicon substrates covered with a thin silicon oxide film, the oxide film desirably having a thickness of no greater than about 5 nm and, desirably, no more than about 2 nm (e.g., about 1-2 nm). The metal silicide nanowires and heterostructures made from the nanowires are well-suited for use in CMOS compatible wire-like electronic, photonic, and spintronic devices.