Patents by Inventor Andrew Leslie Beemer

Andrew Leslie Beemer has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • VIA FORMATION FOR A MEMORY DEVICE
    Publication number: 20220165793
    Abstract: Methods, systems, and devices for via formation in a memory device are described. A memory cell stack for a memory array may be formed. In some examples, the memory cell stack may comprise a storage element. A via may also be formed in an area outside of the memory array, and the via may protrude from a material that surrounds the via. A material may then be formed above the memory cell stack and also above the via, and the top surface of the barrier material may be planarized until at least a portion of the via is exposed. A subsequently formed material may thereby be in direct contact with the top of the via, while a portion of the initially formed material may remain above the memory cell stack.
    Type: Application
    Filed: November 24, 2021
    Publication date: May 26, 2022
    Inventors: David Ross Economy, Andrew Leslie Beemer
  • Memory cell stack and via formation for a memory device
    Patent number: 11189662
    Abstract: Methods, systems, and devices for via formation in a memory device are described. A memory cell stack for a memory array may be formed. In some examples, the memory cell stack may comprise a storage element. A via may also be formed in an area outside of the memory array, and the via may protrude from a material that surrounds the via. A material may then be formed above the memory cell stack and also above the via, and the top surface of the barrier material may be planarized until at least a portion of the via is exposed. A subsequently formed material may thereby be in direct contact with the top of the via, while a portion of the initially formed material may remain above the memory cell stack.
    Type: Grant
    Filed: January 17, 2020
    Date of Patent: November 30, 2021
    Assignee: Micron Technology
    Inventors: David Ross Economy, Andrew Leslie Beemer
  • VIA FORMATION FOR A MEMORY DEVICE
    Publication number: 20210225937
    Abstract: Methods, systems, and devices for via formation in a memory device are described. A memory cell stack for a memory array may be formed. In some examples, the memory cell stack may comprise a storage element. A via may also be formed in an area outside of the memory array, and the via may protrude from a material that surrounds the via. A material may then be formed above the memory cell stack and also above the via, and the top surface of the barrier material may be planarized until at least a portion of the via is exposed. A subsequently formed material may thereby be in direct contact with the top of the via, while a portion of the initially formed material may remain above the memory cell stack.
    Type: Application
    Filed: January 17, 2020
    Publication date: July 22, 2021
    Inventors: David Ross Economy, Andrew Leslie Beemer