Patents by Inventor Andrew Lohn

Andrew Lohn has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Systems and methods to maintain optimum stoichiometry for reactively sputtered films
    Patent number: 10074522
    Abstract: The present invention relates to systems and methods for preparing reactively sputtered films. The films are generally thin transition metal oxide (TMO) films having an optimum stoichiometry for any useful device (e.g., a sub-stoichiometric thin film for a memristor device). Described herein are systems, methods, and calibrations processes that employ rapid control of partial pressures to obtain the desired film.
    Type: Grant
    Filed: March 27, 2015
    Date of Patent: September 11, 2018
    Assignee: National Technology & Engineering Solutions of Sandia, LLC
    Inventors: James E. Stevens, Patrick R. Mickel, Andrew Lohn, Matthew Marinella
  • Multilevel resistive information storage and retrieval
    Patent number: 9412446
    Abstract: The present invention relates to resistive random-access memory (RRAM or ReRAM) systems, as well as methods of employing multiple state variables to form degenerate states in such memory systems. The methods herein allow for precise write and read steps to form multiple state variables, and these steps can be performed electrically. Such an approach allows for multilevel, high density memory systems with enhanced information storage capacity and simplified information retrieval.
    Type: Grant
    Filed: August 18, 2014
    Date of Patent: August 9, 2016
    Assignee: Sandia Corporation
    Inventors: Andrew Lohn, Patrick R. Mickel
  • Methods for resistive switching of memristors
    Patent number: 9336870
    Abstract: The present invention is directed generally to resistive random-access memory (RRAM or ReRAM) devices and systems, as well as methods of employing a thermal resistive model to understand and determine switching of such devices. In particular example, the method includes generating a power-resistance measurement for the memristor device and applying an isothermal model to the power-resistance measurement in order to determine one or more parameters of the device (e.g., filament state).
    Type: Grant
    Filed: February 3, 2015
    Date of Patent: May 10, 2016
    Assignee: Sandia Corporation
    Inventors: Patrick R. Mickel, Conrad D. James, Andrew Lohn, Matthew Marinella, Alexander H. Hsia