Abstract: The present invention is directed to photovoltaic and photogalvanic devices and methods of generating electrical energy and power or detecting light therefrom, based on a novel nano-enhanced bulk photovoltaic effect using non-centrosymmetric crystals, including ferroelectric and piezoelectric materials, where the non-centrosymmetry is the equilibrium state or it is static or dynamically induced. In certain embodiments, the device comprises a layer of non-centrosymmetric crystalline materials, and a plurality of electrodes disposed in an array upon or penetrating into at least one surface of the crystalline material, the electrodes being optimally spaced to capture the ballistic carriers generated upon irradiation of the crystalline material.

Abstract: A method of growing a FE material thin film using physical vapor deposition by pulsed laser deposition or RF sputtering is disclosed. The method involves creating a target to be used for the pulsed laser deposition in order to create a KBNNO thin film. The resultant KBNNO thin film is able to be used in photovoltaic cells.

Abstract: The present invention is directed to photovoltaic and photogalvanic devices and methods of generating electrical energy and power or detecting light therefrom, based on a novel nano-enhanced bulk photovoltaic effect using non-centrosymmetric crystals, including ferroelectric and piezoelectric materials, where the non-centrosymmetry is the equilibrium state or it is static or dynamically induced. In certain embodiments, the device comprises a layer of non-centrosymmetric crystalline materials, and a plurality of electrodes disposed in an array upon or penetrating into at least one surface of the crystalline material, the electrodes being optimally spaced to capture the ballistic carriers generated upon irradiation of the crystalline material.

Abstract: The present invention provides materials with high bulk photovoltaic effect response. The present invention also provides for products comprising the high bulk photovoltaic effect materials of the present invention.

Abstract: A ferroelectric perovskite composition, comprising a perovskite oxide ABO3, and a doping agent selected from perovskites of Ba(Ni,Nb)O3 and Ba(Ni,Nb)O3-?. The ferroelectric perovskite composition may be represented by the formula: xBa(Ni,Nb)O3.(1-x)ABO3 or xBa(Ni,Nb)O3-?.(1-x)ABO3. A method of producing the ferroelectric perovskite composition in thin film form is also provided.

Abstract: A method of growing a FE material thin film using physical vapor deposition by pulsed laser deposition or RF sputtering is disclosed. The method involves creating a target to be used for the pulsed laser deposition in order to create a KBNNO thin film. The resultant KBNNO thin film is able to be used in photovoltaic cells.

Abstract: The present invention provides materials with high bulk photovoltaic effect response. The present invention also provides for products comprising the high bulk photovoltaic effect materials of the present invention.

Abstract: Disclosed herein are ferroelectric perovskites characterized as having a band gap, Egap, of less than 2.5 eV. Also disclosed are compounds comprising a solid solution of KNbO3 and BaNi1/2Nb1/2O3-delta, wherein delta is in the range of from 0 to about 1. The specification also discloses photovoltaic devices comprising one or more solar absorbing layers, wherein at least one of the solar absorbing layers comprises a semiconducting ferroelectric layer. Finally, this patent application provides solar cell, comprising: a heterojunction of n- and p-type semiconductors characterized as comprising an interface layer disposed between the n- and p-type semiconductors, the interface layer comprising a semiconducting ferroelectric absorber layer capable of enhancing light absorption and carrier separation.

Abstract: Disclosed herein are perovskite ferroelectric thin-film. Also disclosed are methods of controlling the properties of ferroelectric thin films. These films can be used in a variety materials and devices, such as catalysts and storage media, respectively.

Abstract: Disclosed are tunable catalysts and methods of controlling the activity of a catalyst. For example, disclosed are methods of controlling the activity of a catalyst, comprising providing a catalyst, comprising a ferroelectric substrate of finite thickness comprising two opposing surfaces, the ferroelectric substrate being characterized as having a polarization; an electrode surmounting one of the surfaces of the ferroelectric substrate; and a catalytically active material surmounting the surface of the ferroelectric substrate opposing the electrode; and subjecting the ferroelectric substrate to a controllable electric field to give rise to a modulation of the polarization of the ferroelectric substrate, whereby the modulation of the polarization controllably alters the activity of one or more chemical species on the catalytically active material.

Abstract: Disclosed herein are ferroelectric perovskites characterized as having a band gap, Egap, of less than 2.5 eV. Also disclosed are compounds comprising a solid solution of KNbO3 and BaNi1/2Nb1/2O3-delta, wherein delta is in the range of from 0 to about 1. The specification also discloses photovoltaic devices comprising one or more solar absorbing layers, wherein at least one of the solar absorbing layers comprises a semiconducting ferroelectric layer. Finally, this patent application provides solar cell, comprising: a heterojunction of n- and p-type semiconductors characterized as comprising an interface layer disposed between the n- and p-type semiconductors, the interface layer comprising a semiconducting ferroelectric absorber layer capable of enhancing light absorption and carrier separation.

Abstract: Disclosed are tunable catalysts and methods of controlling the activity of a catalyst. For example, disclosed are methods of controlling the activity of a catalyst, comprising providing a catalyst, comprising a ferroelectric substrate of finite thickness comprising two opposing surfaces, the ferroelectric substrate being characterized as having a polarization; an electrode surmounting one of the surfaces of the ferroelectric substrate; and a catalytically active material surmounting the surface of the ferroelectric substrate opposing the electrode; and subjecting the ferroelectric substrate to a controllable electric field to give rise to a modulation of the polarization of the ferroelectric substrate, whereby the modulation of the polarization controllably alters the activity of one or more chemical species on the catalytically active material.

Abstract: Disclosed herein are perovskite ferroelectric thin-film. Also disclosed are methods of controlling the properties of ferroelectric thin films. These films can be used in a variety materials and devices, such as catalysts and storage media, respectively.