Abstract: A dispatch optimization system and virtual power plant can be utilized and controlled in order to support the operations of a power distribution system. For example, upon determining an electrical need, the dispatch optimization system and/or virtual power plant may make an energy adjustment by allocating the energy adjustment among distributed energy resources of a fleet of distributed energy resources in order to achieve the energy adjustment. The dispatch optimization system and/or virtual power plant may determine the allocation among the distributed energy resources based on the economic costs and storage costs to use each distributed energy resource.

Abstract: The design of Dynamic Random Access Memory (DRAM) pass transistors is provided via generating a first plurality of transistor leakage currents by simulating different dopant configurations in a transistor; generating a second plurality of transistor leakage currents by simulating, for each dopant configuration of the different dopant configurations, a single trap insertion in the transistor; fitting the first and second pluralities of transistor leakage currents with first and second leakage current distributions; combining the first and second leakage current distributions to produce a third leakage current distribution; generating a third plurality of statistically generated leakage currents for a specified trap density for the transistor based on the first leakage current distribution, on the second leakage current distribution and on a specified trap density; and modeling and evaluating a DRAM cell including the transistor based on the third plurality of statistically generated leakage currents.

Abstract: The design of Dynamic Random Access Memory (DRAM) pass transistors is provided via generating a first plurality of transistor leakage currents by simulating different dopant configurations in a transistor; generating a second plurality of transistor leakage currents by simulating, for each dopant configuration of the different dopant configurations, a single trap insertion in the transistor; fitting the first and second pluralities of transistor leakage currents with first and second leakage current distributions; combining the first and second leakage current distributions to produce a third leakage current distribution; generating a third plurality of statistically generated leakage currents for a specified trap density for the transistor based on the first leakage current distribution, on the second leakage current distribution and on a specified trap density; and modeling and evaluating a DRAM cell including the transistor based on the third plurality of statistically generated leakage currents.

Abstract: Disclosed herein are MEMS resonator device designs and fabrication techniques that provide protection against electrostatic charge imbalances. In one aspect, a MEMS resonator device includes a substrate, an electrode including a first microstructure supported by the substrate, a resonant element including a second microstructure spaced from the first microstructure by a gap for resonant displacement of the second microstructure within the gap during operation, and a disabled shunt coupled to the electrode or the resonant element. The disabled shunt is disabled to enable the resonant displacement but otherwise configured to protect against damage from an electrostatic charge imbalance before the operation of the MEMS resonator device.

Abstract: Disclosed herein are MEMS resonator device designs and fabrication techniques that provide protection against electrostatic charge imbalances. In one aspect, a MEMS resonator device includes a substrate, an electrode including a first microstructure supported by the substrate, a resonant element including a second microstructure spaced from the first microstructure by a gap for resonant displacement of the second microstructure within the gap during operation, and a disabled shunt coupled to the electrode or the resonant element. The disabled shunt is disabled to enable the resonant displacement but otherwise configured to protect against damage from an electrostatic charge imbalance before the operation of the MEMS resonator device.

Abstract: Disclosed herein are MEMS resonator device designs and fabrication techniques that provide protection against electrostatic charge imbalances. In one aspect, a MEMS resonator device includes a substrate, an electrode including a first microstructure supported by the substrate, a resonant element including a second microstructure spaced from the first microstructure by a gap for resonant displacement of the second microstructure within the gap during operation, and a disabled shunt coupled to the electrode or the resonant element. The disabled shunt is disabled to enable the resonant displacement but otherwise configured to protect against damage from an electrostatic charge imbalance before the operation of the MEMS resonator device.

Abstract: A device has a resonator coupled to input and output nodes, the resonator being characterized by a transducer to drive the output node, and further characterized by a feedthrough capacitance such that portions of the input signal bypass the transducer to allow a spurious signal to reach the output node. The device includes a compensation capacitor coupled to the output node to define a compensation capacitance in accordance with the feedthrough capacitance. A phase inversion circuit is coupled to the compensation capacitance to generate a compensation signal and coupled to the output node such that the spurious signal is offset by the compensation signal. In some cases, a differential amplifier of the phase inversion circuit has the compensation capacitance in a feedback path to offset the feedthrough capacitance. In these and other cases, the compensation capacitance and the feedthrough capacitance may be unmatched to avoid overcompensation.

Abstract: Disclosed herein are devices and methods for generating a modulated signal with a MEMS resonator, or microresonator. A bias, or polarization, voltage for activating the MEMS resonator is determined by a control signal, or input voltage, indicative of information to be carried by the modulated signal. In some cases, the MEMS resonator may be driven by an oscillator circuit to facilitate operation of the MEMS resonator. The control signal may include an amplitude modulated voltage or a digital data stream such that output signals of the MEMS resonator or oscillator circuit may carry information via frequency modulation, such as frequency shift keying modulation.

Abstract: A device has a resonator coupled to input and output nodes, the resonator being characterized by a transducer to drive the output node, and further characterized by a feedthrough capacitance such that portions of the input signal bypass the transducer to allow a spurious signal to reach the output node. The device includes a compensation capacitor coupled to the output node to define a compensation capacitance in accordance with the feedthrough capacitance. A phase inversion circuit is coupled to the compensation capacitance to generate a compensation signal and coupled to the output node such that the spurious signal is offset by the compensation signal. In some cases, a differential amplifier of the phase inversion circuit has the compensation capacitance in a feedback path to offset the feedthrough capacitance. In these and other cases, the compensation capacitance and the feedthrough capacitance may be unmatched to avoid overcompensation.

Abstract: The invention provides a vehicle wheel arch (18) of the type including an antenna (20) for interacting with a device (22) carried by an assembly (12) of a wheel (14) and a tire (16). The wheel arch includes a shield (24) overlying the antenna (20) beside the radially-inner face of the wheel arch (18), said shield (24) being suitable for retaining matter (26) at a certain distance from the antenna (20).