Abstract: According to some embodiments of the present invention, an avalanche photodiode includes a first electrode, a second electrode spaced apart from the first electrode, a photon absorber layer formed to be in electrical connection with the first electrode, and a charge-carrier multiplication layer formed to be in electrical connection with the second electrode. The photon absorber layer is a semiconducting material that has a first lattice constant, and the charge-carrier multiplication layer is a semiconducting material that has a second lattice constant that is different from the first lattice constant. The photon absorber layer and the charge-carrier multiplication layer are connected together by an interfacial misfit (IMF) array at an interface thereof such that the IMF array provides at least part of an acceleration potential for an avalanche region of the avalanche photodiode.