Patents by Inventor Andrew R. Romano
Andrew R. Romano has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8956147Abstract: An inner mold body includes a first pair of side walls opposite one another, each of the first pair of side walls having a pair of engagement members attached thereto, a second pair of side walls opposite one another; wherein each of the second pair of side walls is adjacent to each of the first pair of side walls, and a separation mechanism in contact with each of the second pair of side walls.Type: GrantFiled: November 22, 2011Date of Patent: February 17, 2015Assignee: The Ohorizons FoundationInventors: Craig T. Dillon, Andrew R. Romano
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Patent number: 8911587Abstract: An apparatus for etching an etch layer formed on a substrate is provided. A first photoresist (PR) mask with first mask features is provided on the etch layer. The apparatus performs a process for providing a protective coating on the first PR mask. The process includes at least one cycle. Each cycle includes (a) a deposition phase for depositing a deposition layer over the surface of the first mask features using a deposition gas, and (b) a profile shaping phase for shaping the profile of the deposition layer using a profile shaping gas. A liquid PR material is applied over the first PR mask having the protective coating. The PR material is patterned into a second mask features, where the first and second mask features form a second PR mask. The etch layer is etched though the second PR mask.Type: GrantFiled: September 10, 2012Date of Patent: December 16, 2014Assignee: Lam Research CorporationInventors: Andrew R. Romano, S. M. Reza Sadjadi
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Publication number: 20130127088Abstract: An inner mold body includes a first pair of side walls opposite one another, each of the first pair of side walls having a pair of engagement members attached thereto, a second pair of side walls opposite one another; wherein each of the second pair of side walls is adjacent to each of the first pair of side walls, and a separation mechanism in contact with each of the second pair of side walls.Type: ApplicationFiled: November 22, 2011Publication date: May 23, 2013Inventors: Craig T. Dillon, Andrew R. Romano
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Patent number: 8361564Abstract: A method for implanting a dopant in a substrate is provided. A patterned photoresist mask is formed over the substrate, wherein the patterned photoresist mask has patterned photoresist mask features. A protective layer is deposited on the patterned photoresist mask by performing a cyclical deposition, wherein each cycle, comprises a depositing phase for depositing a deposition layer over surfaces of the patterned mask of photoresist material and a profile shaping phase for providing vertical sidewalls. A dopant is implanted into the substrate using an ion beam. The protective layer and photoresist mask are removed.Type: GrantFiled: December 19, 2008Date of Patent: January 29, 2013Assignee: Lam Research CorporationInventors: Andrew R. Romano, S. M. Reza Sadjadi
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Publication number: 20130000846Abstract: An apparatus for etching an etch layer formed on a substrate is provided. A first photoresist (PR) mask with first mask features is provided on the etch layer. The apparatus performs a process for providing a protective coating on the first PR mask. The process includes at least one cycle. Each cycle includes (a) a deposition phase for depositing a deposition layer over the surface of the first mask features using a deposition gas, and (b) a profile shaping phase for shaping the profile of the deposition layer using a profile shaping gas. A liquid PR material is applied over the first PR mask having the protective coating. The PR material is patterned into a second mask features, where the first and second mask features form a second PR mask. The etch layer is etched though the second PR mask.Type: ApplicationFiled: September 10, 2012Publication date: January 3, 2013Applicant: LAM RESEARCH CORPORATIONInventors: Andrew R. ROMANO, S.M. Reza SADJADI
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Publication number: 20120328781Abstract: A method for implanting a dopant in a substrate is provided. A patterned photoresist mask is formed over the substrate, wherein the patterned photoresist mask has patterned photoresist mask features. A protective layer is deposited on the patterned photoresist mask by performing a cyclical deposition, wherein each cycle, comprises a depositing phase for depositing a deposition layer over surfaces of the patterned mask of photoresist material and a profile shaping phase for providing vertical sidewalls. A dopant is implanted into the substrate using an ion beam. The protective layer and photoresist mask are removed.Type: ApplicationFiled: December 19, 2008Publication date: December 27, 2012Applicant: Lam Research CorporationInventors: Andrew R. Romano, S. M. Reza Sadjadi
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Publication number: 20120282780Abstract: A method for etching features into an etch layer is provided. A patterned mask is formed over the etch layer, wherein the patterned mask is of a high etch rate photoresist material, wherein the patterned mask has patterned mask features. A protective layer is deposited on the patterned mask of high etch rate photoresist material by performing a cyclical deposition, wherein each cycle, comprises a depositing phase for depositing a deposition layer over the exposed surfaces, including sidewalls of the patterned mask of high etch rate photoresist material and a profile shaping phase for providing vertical sidewalls. Features are etched into the etch layer using the protective layer as a mask. The protective layer is removed.Type: ApplicationFiled: December 19, 2008Publication date: November 8, 2012Applicant: LAM RESEARCH CORPORATIONInventors: Andrew R. Romano, S. M. Reza Sadjadi
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Patent number: 8282847Abstract: A method for etching an etch layer formed on a substrate is provided. A first photoresist (PR) mask with first mask features is provided on the etch layer. A protective coating is provided on the first PR mask by a process including at least one cycle. Each cycle includes (a) a deposition phase for depositing a deposition layer over the surface of the first mask features using a deposition gas, and (b) a profile shaping phase for shaping the profile of the deposition layer using a profile shaping gas. A liquid PR material is applied over the first PR mask having the protective coating. The PR material is patterned into a second mask features, where the first and second mask features form a second PR mask. The etch layer is etched though the second PR mask.Type: GrantFiled: December 18, 2008Date of Patent: October 9, 2012Assignee: Lam Research CorporationInventors: Andrew R. Romano, S. M. Reza Sadjadi
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Patent number: 7977242Abstract: A method for providing features in an etch layer is provided by forming an organic mask layer over the inorganic mask layer, forming a silicon-containing mask layer over the organic mask layer, forming a patterned mask layer over the silicon-containing mask layer, etching the silicon-containing mask layer through the patterned mask, depositing a polymer over the etched silicon-containing mask layer, depositing a silicon-containing film over the polymer, planarizing the silicon-containing film, selectively removing the polymer leaving the silicon-containing film, etching the organic layer, and etching the inorganic layer.Type: GrantFiled: February 5, 2009Date of Patent: July 12, 2011Assignee: Lam Research CorporationInventors: S. M. Reza Sadjadi, Lumin Li, Andrew R. Romano
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Patent number: 7816071Abstract: A process for imaging a photoresist comprising the steps of, a) forming a stack of multiple layers of organic antireflective coatings on a substrate; b) forming a coating of a photoresist over the upper layer of the stack of multiple layers of organic antireflective coatings; c) imagewise exposing the photoresist with an exposure equipment; and, d) developing the coating with a developer.Type: GrantFiled: January 24, 2006Date of Patent: October 19, 2010Assignee: AZ Electronic Materials USA Corp.Inventors: David J. Abdallah, Mark O. Neisser, Ralph R. Dammel, Georg Pawlowski, John Biafore, Andrew R. Romano
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Publication number: 20090215272Abstract: A method for providing features in an etch layer is provided by forming an organic mask layer over the inorganic mask layer, forming a silicon-containing mask layer over the organic mask layer, forming a patterned mask layer over the silicon-containing mask layer, etching the silicon-containing mask layer through the patterned mask, depositing a polymer over the etched silicon-containing mask layer, depositing a silicon-containing film over the polymer, planarizing the silicon-containing film, selectively removing the polymer leaving the silicon-containing film, etching the organic layer, and etching the inorganic layer.Type: ApplicationFiled: February 5, 2009Publication date: August 27, 2009Applicant: LAM RESEARCH CORPORATIONInventors: S. M. Reza Sadjadi, Lumin Li, Andrew R. Romano
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Publication number: 20090162790Abstract: A method for etching an etch layer formed on a substrate is provided. A first photoresist (PR) mask with first mask features is provided on the etch layer. A protective coating is provided on the first PR mask by a process including at least one cycle. Each cycle includes (a) a deposition phase for depositing a deposition layer over the surface of the first mask features using a deposition gas, and (b) a profile shaping phase for shaping the profile of the deposition layer using a profile shaping gas. A liquid PR material is applied over the first PR mask having the protective coating. The PR material is patterned into a second mask features, where the first and second mask features form a second PR mask. The etch layer is etched though the second PR mask.Type: ApplicationFiled: December 18, 2008Publication date: June 25, 2009Applicant: LAM RESEARCH CORPORATIONInventors: Andrew R. ROMANO, S.M. Reza SADJADI
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Publication number: 20090163035Abstract: A method for etching features into an etch layer is provided. A patterned mask is formed over the etch layer, wherein the patterned mask is of a high etch rate photoresist material, wherein the patterned mask has patterned mask features. A protective layer is deposited on the patterned mask of high etch rate photoresist material by performing a cyclical deposition, wherein each cycle, comprises a depositing phase for depositing a deposition layer over the exposed surfaces, including sidewalls of the patterned mask of high etch rate photoresist material and a profile shaping phase for providing vertical sidewalls. Features are etched into the etch layer using the protective layer as a mask. The protective layer is removed.Type: ApplicationFiled: December 19, 2008Publication date: June 25, 2009Applicant: LAM RESEARCH CORPORATIONInventors: Andrew R. Romano, S. M. Reza Sadjadi
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Publication number: 20090162553Abstract: A method for implanting a dopant in a substrate is provided. A patterned photoresist mask is formed over the substrate, wherein the patterned photoresist mask has patterned photoresist mask features. A protective layer is deposited on the patterned photoresist mask by performing a cyclical deposition, wherein each cycle, comprises a depositing phase for depositing a deposition layer over surfaces of the patterned mask of photoresist material and a profile shaping phase for providing vertical sidewalls. A dopant is implanted into the substrate using an ion beam. The protective layer and photoresist mask are removed.Type: ApplicationFiled: December 19, 2008Publication date: June 25, 2009Applicant: Lam Research CorporationInventors: Andrew R. Romano, S. M. Reza Sadjadi
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Patent number: 7537879Abstract: The present invention relates to a novel chemically amplified photoresist, which is sensitive to wavelengths between 300 nm and 100 nm, and comprises a) a novel polymer comprising a sulfone group pendant from a polymer backbone that is insoluble in an aqueous alkaline solution and comprises at least one acidic moiety protected with acid labile group, and b) a compound capable of producing an acid upon irradiation. The invention also relates to a process of imaging the novel positive photoresist composition.Type: GrantFiled: November 22, 2004Date of Patent: May 26, 2009Assignee: AZ Electronic Materials USA Corp.Inventors: Francis M. Houlihan, Ralph R. Dammel, Andrew R. Romano, Munirathna Padmanaban, M. Dalil Rahman
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Patent number: 7473512Abstract: The present invention relates to a process for imaging deep ultraviolet (uv) photoresists with a topcoat using deep uv immersion lithography. The invention further relates to a topcoat composition comprising a polymer with at least one ionizable group having a pKa ranging from about ?9 to about 11. The invention also relates to a process for imaging a photoresist with a top barrier coat to prevent contamination of the photoresist from environmental contaminants.Type: GrantFiled: January 27, 2005Date of Patent: January 6, 2009Assignee: AZ Electronic Materials USA Corp.Inventors: Francis M. Houlihan, Ralph R. Dammel, Andrew R. Romano, Raj Sakamuri
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Patent number: 5989763Abstract: Gases evolved during photolithographic processing of chemically amplified photoresist systems are monitored to allow optimization of process parameters such as intensity and duration of applied heat or radiation. Specifically, during soft bake, evaporation of solvent gases is detected. During exposure and PEB, gases evolved during activation of the polymer resin component by the photoacid are detected. The intensity and/or duration of the heating or exposure are then varied to optimize resolution of the particular photolithography process. Residual gas analysis, diode laser spectroscopy, FT-IR spectroscopy, and electronic sensing may be utilized alone or in combination to monitor composition and/or concentration of evolved gases in accordance with the present invention.Type: GrantFiled: May 28, 1998Date of Patent: November 23, 1999Assignee: National Semicondustor CorporationInventors: Joseph Bendik, Andrew R. Romano, Nickhil Jakatdar