Abstract: Systems, devices, and methods are provided for fingerprinting requests, such as transaction records. A transaction record or other suitable request may be parsed to identify a parameter values for a set of fields relevant to fingerprinting. A transaction record representation may be generated based on transaction input data, transaction output data, intermediate data, or combinations thereof. A fingerprint may be generated from the transaction record implementation. Fingerprints may be used to identify various test cases that can be used for regression testing.

Abstract: Semiconductor devices and methods of forming the same include recessing sacrificial layers in a stack of alternating sacrificial layers and channel layers using a first etch to form curved recesses at sidewalls of each sacrificial layer in the stack, with tails of sacrificial material being present at a top and bottom of each curved recess. Dielectric plugs are formed that each partially fill a respective curved recess, leaving exposed at least a portion of each tail of sacrificial material. The tails of sacrificial material are etched back using a second etch to expand the recesses. Inner spacers are formed in the expanded recesses.

Abstract: A package substrate is provided and includes a core board body and a first circuit structure and a second circuit structure disposed on opposite sides of the core board body, where the number of wiring layers of the second circuit structure is different from the number of wiring layers of the first circuit structure, so that the package substrate is asymmetrical. The first circuit structure and the second circuit structure are designed according to the thickness and coefficient of thermal expansion of the first dielectric layer of the first circuit structure and the second dielectric layer of the second circuit structure, so as to prevent the problem of warping from occurring to the package substrate.

Abstract: An electronic package of which the manufacturing method is to dispose an electronic element on a circuit portion, encapsulate the electronic element with an Ajinomoto build-up film (ABF) used as an encapsulating layer, form a wiring layer on the encapsulating layer, and form a conductive via in the encapsulating layer. Therefore, the wiring layer can be well bonded onto the encapsulating layer as the ABF material is used as the encapsulating layer.

Abstract: A display may include an array of pixels. A pixel can include an organic light-emitting diode, up to three thin-film transistors, and up to two capacitors. The pixel can include a drive transistor, an emission transistor, and a select transistor. The select transistor can be used to apply a reference voltage to the gate of the drive transistor during a global reset phase and during a global threshold voltage sampling phase and can also be used to apply a data voltage to the gate of the drive transistor during a data programming phase. The drive transistor can receive a power supply voltage that toggles between a low voltage during the global reset phase and a high voltage during other phases of operation. Configured and operated in this way, the pixel need not include separate dedicated anode reset and initialization transistors.

Abstract: The present application provides deazaguaine compounds that modulate the activity of the V617F variant of JAK2, which are useful in the treatment of various diseases, including cancer.

Abstract: An apparatus includes a chassis housing a control server compartment, a compute server compartment, and an input and output (IO) subsystem compartment. The apparatus further includes an IO subsystem inserted into the IO subsystem compartment, a compute server inserted into the compute server compartment, and a control server inserted into the control server compartment coupled to the compute server via an Ethernet connection. The IO subsystem includes one or more IO modules, where at least some of the IO modules can be coupled to sensors. The compute server receives the sensor data from the IO subsystem via some PCIe links and generates planning and control data based on the sensor data for controlling the autonomous vehicle. The control server controls and operates the autonomous vehicle by sending control commands to hardware of the autonomous vehicle based on the planning and control data received from the compute server.

Abstract: An apparatus includes a chassis housing a control server compartment, a compute server compartment, and an input and output (IO) subsystem compartment. The apparatus further includes an IO subsystem inserted into the IO subsystem compartment, a compute server inserted into the compute server compartment, and a control server inserted into the control server compartment coupled to the compute server via an Ethernet connection. The IO subsystem includes one or more IO modules, where at least some of the IO modules can be coupled to sensors. The compute server receives the sensor data from the IO subsystem via some PCIe links and generates planning and control data based on the sensor data for controlling the autonomous vehicle. The control server controls and operates the autonomous vehicle by sending control commands to hardware of the autonomous vehicle based on the planning and control data received from the compute server.

Abstract: Improved methods for stripping photoresist and removing ion implant related residues from a work piece surface are provided. According to various embodiments, plasma is generated using elemental hydrogen, a fluorine-containing gas and a protectant gas. The plasma-activated gases reacts with the high-dose implant resist, removing both the crust and bulk resist layers, while simultaneously protecting exposed portions of the work piece surface. The work piece surface is substantially residue free with low silicon loss.

Abstract: Improved methods and apparatus for stripping photoresist and removing ion implant related residues from a work piece surface are provided. According to various embodiments, the workpiece is exposed to a passivation plasma, allowed to cool for a period of time, and then exposed to an oxygen-based or hydrogen-based plasma to remove the photoresist and ion implant related residues. Aspects of the invention include reducing silicon loss, leaving little or no residue while maintaining an acceptable strip rate. In certain embodiments, methods and apparatus remove photoresist material after high-dose ion implantation processes.

Abstract: Improved methods for stripping photoresist and removing ion implant related residues from a work piece surface are provided. According to various embodiments, plasma is generated using elemental hydrogen, a fluorine-containing gas and a protectant gas. The plasma-activated gases reacts with the high-dose implant resist, removing both the crust and bulk resist layers, while simultaneously protecting exposed portions of the work piece surface. The work piece surface is substantially residue free with low silicon loss.

Abstract: Improved methods and apparatus for stripping photoresist and removing ion implant related residues from a work piece surface are provided. According to various embodiments, the workpiece is exposed to a passivation plasma, allowed to cool for a period of time, and then exposed to an oxygen-based or hydrogen-based plasma to remove the photoresist and ion implant related residues. Aspects of the invention include reducing silicon loss, leaving little or no residue while maintaining an acceptable strip rate. In certain embodiments, methods and apparatus remove photoresist material after high-dose ion implantation processes.