Patents by Inventor Andy Cuong Tran

Andy Cuong Tran has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for resetting pinned layer magnetization in a magnetoresistive sensor
    Patent number: 7370404
    Abstract: A spin valve sensor in a read head has a spacer layer which is located between a self-pinned AP pinned layer structure and a free layer structure. The free layer structure is longitudinally stabilized by first and second hard bias layers which abut first and second side surfaces of the spin valve sensor. The AP pinned layer structure has an antiparallel coupling layer (APC) which is located between first and second AP pinned layers (AP1) and (AP2). The invention employs a resetting process for setting of the magnetic moments of the AP pinned layers by applying a field at an acute angle to the head surface in a plane parallel to the major planes of the layers of the sensor. The resetting process sets a proper polarity of each AP pinned layer, which polarity conforms to processing circuitry employed with the spin valve sensor.
    Type: Grant
    Filed: May 28, 2004
    Date of Patent: May 13, 2008
    Assignee: Hitachi Global Storage Technologies Netherlands B.V.
    Inventors: Hardayal Singh Gill, Jinshan Li, Kenneth Donald Mackay, Kouichi Nishioka, Andy Cuong Tran
  • Method of setting self-pinned AP pinned layers with a canted field
    Patent number: 6866751
    Abstract: A spin valve sensor in a read head has a spacer layer which is located between a self-pinned AP pinned layer structure and a free layer structure. The free layer structure is longitudinally stabilized by first and second hard bias layers which abut first and second side surfaces of the spin valve sensor. The AP pinned layer structure has an antiparallel coupling layer (APC) which is located between first and second AP pinned layers (AP1) and (AP2). The invention employs a preferential setting of the magnetic moments of the AP pinned layers by applying a field at an acute angle to the head surface in a plane parallel to the major planes of the layers of the sensor. The preferential setting sets a proper polarity of each AP pinned layer, which polarity conforms to processing circuitry employed with the spin valve sensor.
    Type: Grant
    Filed: March 21, 2002
    Date of Patent: March 15, 2005
    Assignee: Hitachi Global Storage Technologies Netherlands B.V.
    Inventors: Hardayal Singh Gill, Andy Cuong Tran
  • Method of setting self-pinned AP pinned layers with a canted field
    Publication number: 20030179500
    Abstract: A spin valve sensor in a read head has a spacer layer which is located between a self-pinned AP pinned layer structure and a free layer structure. The free layer structure is longitudinally stabilized by first and second hard bias layers which abut first and second side surfaces of the spin valve sensor. The AP pinned layer structure has an antiparallel coupling layer (APC) which is located between first and second AP pinned layers (AP1) and (AP2). The invention employs a preferential setting of the magnetic moments of the AP pinned layers by applying a field at an acute angle to the head surface in a plane parallel to the major planes of the layers of the sensor. The preferential setting sets a proper polarity of each AP pinned layer, which polarity conforms to processing circuitry employed with the spin valve sensor.
    Type: Application
    Filed: March 21, 2002
    Publication date: September 25, 2003
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Hardayal Singh Gill, Andy Cuong Tran