Patents by Inventor Andy W. DeSepte

Andy W. DeSepte has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Apparatuses for adjusting electrode gap in capacitively-coupled RF plasma reactor
    Patent number: 8080760
    Abstract: A plasma processing chamber includes a cantilever assembly configured to neutralize atmospheric load. The chamber includes a wall surrounding an interior region and having an opening formed therein. A cantilever assembly includes a substrate support for supporting a substrate within the chamber. The cantilever assembly extends through the opening such that a portion is located outside the chamber. The chamber includes an actuation mechanism operative to move the cantilever assembly relative to the wall.
    Type: Grant
    Filed: January 25, 2010
    Date of Patent: December 20, 2011
    Assignee: Lam Research Corporation
    Inventors: Rajinder Dhindsa, Eric H. Lenz, Andy W. DeSepte, Lumin Li
  • Apparatuses for adjusting electrode gap in capacitively-coupled RF plasma reactor
    Patent number: 7732728
    Abstract: A plasma processing chamber includes a cantilever assembly configured to neutralize atmospheric load. The chamber includes a wall surrounding an interior region and having an opening formed therein. A cantilever assembly includes a substrate support for supporting a substrate within the chamber. The cantilever assembly extends through the opening such that a portion is located outside the chamber. The chamber includes an actuation mechanism operative to move the cantilever assembly relative to the wall.
    Type: Grant
    Filed: January 17, 2007
    Date of Patent: June 8, 2010
    Assignee: Lam Research Corporation
    Inventors: Rajinder Dhindsa, Eric H. Lenz, Andy W. DeSepte, Lumin Li
  • APPARATUSES FOR ADJUSTING ELECTRODE GAP IN CAPACITIVELY-COUPLED RF PLASMA REACTOR
    Publication number: 20100124822
    Abstract: A plasma processing chamber includes a cantilever assembly configured to neutralize atmospheric load. The chamber includes a wall surrounding an interior region and having an opening formed therein. A cantilever assembly includes a substrate support for supporting a substrate within the chamber. The cantilever assembly extends through the opening such that a portion is located outside the chamber. The chamber includes an actuation mechanism operative to move the cantilever assembly relative to the wall.
    Type: Application
    Filed: January 25, 2010
    Publication date: May 20, 2010
    Applicant: Lam Research Corporation
    Inventors: Rajinder Dhindsa, Eric H. Lenz, Andy W. DeSepte, Lumin Li
  • Apparatuses for adjusting electrode gap in capacitively-coupled RF plasma reactor
    Publication number: 20080171444
    Abstract: A plasma processing chamber includes a cantilever assembly configured to neutralize atmospheric load. The chamber includes a wall surrounding an interior region and having an opening formed therein. A cantilever assembly includes a substrate support for supporting a substrate within the chamber. The cantilever assembly extends through the opening such that a portion is located outside the chamber. The chamber includes an actuation mechanism operative to move the cantilever assembly relative to the wall.
    Type: Application
    Filed: January 17, 2007
    Publication date: July 17, 2008
    Applicant: Lam Research Corporation
    Inventors: Rajinder Dhindsa, Eric H. Lenz, Andy W. DeSepte, Lumin Li