Abstract: Devices, methods, and systems for managing temperature dependent failures in a memory device. An erase failure of a memory block is detected, and marked as a grown bad block if the memory device temperature is below a threshold temperature. If the temperature exceeds the threshold temperature, it is determined whether memory cells of the block exceed a first threshold voltage. If the memory cells of the block exceed the first threshold voltage, the block is marked as a potential grown bad block. If the memory cells of the block are below the first threshold voltage, it is determined whether a number of the memory cells of the block exceed a second threshold voltage. If the memory cells of the block are below the second threshold, the block is programmed. If the memory cells of the block exceed the second threshold, the block is marked for error correction and programmed.

Abstract: Devices, methods, and systems for managing temperature dependent failures in a memory device. An erase failure of a memory block is detected, and marked as a grown bad block if the memory device temperature is below a threshold temperature. If the temperature exceeds the threshold temperature, it is determined whether memory cells of the block exceed a first threshold voltage. If the memory cells of the block exceed the first threshold voltage, the block is marked as a potential grown bad block. If the memory cells of the block are below the first threshold voltage, it is determined whether a number of the memory cells of the block exceed a second threshold voltage. If the memory cells of the block are below the second threshold, the block is programmed. If the memory cells of the block exceed the second threshold, the block is marked for error correction and programmed.

Abstract: Apparatuses, systems, and methods are disclosed for read threshold adjustment using reference data for non-volatile memory. An apparatus may include an array of non-volatile memory cells and a controller. A controller may be configured to write a predetermined reference data pattern to a region of an array. A controller may be configured to read reference data from a region. A controller may be configured to set one or more read thresholds based on identifying differences between reference data and a predetermined reference data pattern.

Abstract: Non-volatile memory and processes for reprogramming data posing a potential reliability concern are provided. A process is provided for distinguishing between cross-temperature effects and read disturb effects as part of determining whether to perform a maintenance operation such as reprogramming. A process is provided that compensates for cross-temperature effects while testing to determine whether to perform a maintenance operation. Applying temperature compensation attempts to remove cross-temperature effects so that testing accurately detects whether read disturb has occurred, without the effects of temperature. By reducing cross-temperature effects, maintenance operations can be more accurately scheduled for memory that has experienced read disturb, as opposed to cross-temperature effects.

Abstract: Apparatuses, systems, and methods are disclosed for read threshold adjustment using reference data for non-volatile memory. An apparatus may include an array of non-volatile memory cells and a controller. A controller may be configured to write a predetermined reference data pattern to a region of an array. A controller may be configured to read reference data from a region. A controller may be configured to set one or more read thresholds based on identifying differences between reference data and a predetermined reference data pattern.

Abstract: Non-volatile memory and processes for reprogramming data posing a potential reliability concern are provided. A process is provided for distinguishing between cross-temperature effects and read disturb effects as part of determining whether to perform a maintenance operation such as reprogramming. A process is provided that compensates for cross-temperature effects while testing to determine whether to perform a maintenance operation. Applying temperature compensation attempts to remove cross-temperature effects so that testing accurately detects whether read disturb has occurred, without the effects of temperature. By reducing cross-temperature effects, maintenance operations can be more accurately scheduled for memory that has experienced read disturb, as opposed to cross-temperature effects.