Abstract: An optoelectronic component may include a carrier, a protective layer on or above the carrier, a first electrode on or above the protective layer, an organic functional layer structure on or above the first electrode, and a second electrode on or above the organic functional layer structure. The protective layer has a lower transmission than the carrier for electromagnetic radiation having a wavelength of less than approximately 400 nm at least in one wavelength range. The protective layer includes a glass.

Abstract: A glass composition, a device and a method for producing the device are disclosed. In an embodiment, the glass composition includes a tellurium oxide in a proportion of at least 65 mol. % and at most 90 mol. %, R1O in a proportion between 0 mol. % and 20 mol. %, wherein R1 is selected from Mg, Ca, Sr, Ba, Zn, Mn and combinations thereof and at least one M12O in a proportion between 5 mol. % and 25 mol. %, wherein M1 is selected from Li, Na, K and combinations thereof. The glass component further includes at least one R22O3 in a proportion between 1 mol. % and 3 mol. %, wherein R2 is selected from Al, Ga, In, Bi, Sc, Y, La, rare earths and combinations thereof, and M2O2 in a proportion between 0 mol. % and 2 mol. %, wherein M2 is selected from Ti, Zr, Hf and combinations thereof.

Abstract: A conversion element, a component and a method for producing the component are disclosed. In an embodiment the conversion element includes a phosphor configured to convert electromagnetic primary radiation into electromagnetic secondary radiation and a glass composition as matrix material in which the phosphor is embedded. The glass composition has the following chemical composition: at least one tellurium oxide with a proportion of 65 mole % as a minimum and 90 mole % as a maximum, R1O with a proportion of between 0 mole % and 20 mole %, at least one M12O with a proportion of between 5 mole % and 25 mole %, at least one R22O3 with a proportion of between 1 mole % and 3 mole %, M2O2 with a proportion of between 0 mole % and 2 mole %, and R32O5 with a proportion of between 0 mole % and 6 mole %.

Abstract: A device for providing electromagnetic radiation may include a radiation arrangement for generating excitation radiation, and at least one conversion element for generating conversion radiation, which includes condensed metal phosphate and phosphors embedded in the condensed metal phosphate, and is arranged at a distance from the radiation arrangement in a beam path of the excitation radiation. The conversion element includes a silicatic matrix and alkali metal phosphate.

Abstract: An optoelectronic semiconductor component having a light source, which emits primary radiation, a housing, and electrical terminals, wherein a conversion element, which is based on a matrix and at least two phosphors, is connected upstream of the optoelectronic semiconductor component. The matrix contains metal phosphate and preferably consists of metal phosphate. The phosphors partially or completely convert primary radiation. At least one first phosphor powder is embedded and fixed in a first inorganic matrix based on a metal phosphate, and at least one second phosphor powder is embedded and fixed in a second matrix based on a metal phosphate.

Abstract: An optoelectronic component may include a carrier, a protective layer on or above the carrier, a first electrode on or above the protective layer, an organic functional layer structure on or above the first electrode, and a second electrode on or above the organic functional layer structure. The protective layer has a lower transmission than the carrier for electromagnetic radiation having a wavelength of less than approximately 400 nm at least in one wavelength range. The protective layer includes a glass.

Abstract: Various embodiments may relate to a process for producing a scattering layer for electromagnetic radiation. The process may include applying scattering centers onto a carrier, applying glass onto the scattering centers, and liquefying of the glass so that a part of the liquefied glass flows between the scattering centers toward the surface of the carrier, in such a way that a part of the liquefied glass still remains above the scattering centers.

Abstract: A device for providing electromagnetic radiation may include a radiation arrangement for generating excitation radiation, and at least one conversion element for generating conversion radiation, which includes condensed metal phosphate and phosphors embedded in the condensed metal phosphate, and is arranged at a distance from the radiation arrangement in a beam path of the excitation radiation. The conversion element includes a silicatic matrix and alkali metal phosphate.

Abstract: A radiation-emitting component includes a semiconductor chip and a conversion element. The semiconductor chip includes an active layer suitable for generating electromagnetic radiation and a radiation exit face. The conversion element includes a matrix material and a luminescent material. The conversion element is arranged downstream of the radiation exit face of the semiconductor chip. The matrix material comprises at least 40 wt. % tellurium oxide and is free of boron trioxide and/or germanium oxide. A method for producing such a radiation-emitting component is furthermore stated.

Abstract: An optoelectronic semiconductor part comprising a light source, a housing and electrical connections, wherein the optoelectronic semiconductor part comprises a component which contains metal phosphate, and wherein the metal phosphate is substantially alkali-free and halogen-free.

Abstract: A method for producing a conversion element for an optical and/or optoelectronic component is provided. The method may include at least: providing a transparent substrate, applying a layer, which contains powdered glass solder, vitrifying the layer by a first temperature treatment, whereby the glass solder of the layer is vitrified and thus converted into a transparent glass material having little intrinsic coloration, applying a phosphor-containing material to the layer, and performing a second temperature treatment, whereby phosphor of the phosphor-containing material sinks into the glass material of the layer.

Abstract: A method for producing a conversion element (10) for an optical and/or optoelectronic component (20), wherein the method comprises the following steps: a) applying phosphor (4; 4a) or a material (3a) which contains phosphor (4; 4a) to a surface (1A) of a transparent, phosphor-free, and homogeneous glass material (2a) and performance of a temperature treatment (TB1) at elevated temperature (T1) above the softening temperature (Tw) of the glass material (2a), wherein the glass material (2a) is softened enough that the phosphor (4; 4a) sinks into the glass material; (2a), and b) cooling the glass material (2a) including the sunken-in phosphor.

Abstract: An optoelectronic semiconductor component includes a light source, a housing and electrical connections, wherein the light source has a chip which emits primary radiation in the UV or blue region with a peak wavelength in particular in the region of 300 to 490 nm, wherein the primary radiation is partially or completely converted into radiation of a different wavelength by a previously applied conversion element, characterized in that the conversion element has a translucent or transparent substrate, which is manufactured from ceramic or glass ceramic, wherein a glass matrix is applied to the substrate, with a phosphor being embedded in said glass matrix.

Abstract: An optoelectronic semiconductor component comprising a light source, a housing and electrical connections, wherein the light source emits primary radiation having a peak wavelength in the range of 420 to 460 nm and having a flank of the primary emission which extends into the range less than 420 nm, wherein the radiation of the flank range or of part thereof is converted into visible radiation by an additive phosphor.

Abstract: An optoelectronic semiconductor element having a light source, a housing and electrical terminals, wherein the optoelectronic semiconductor element comprises components, which are produced from glass, and wherein at least two components touch at boundary surfaces adjusted to one another and are welded to one another directly there.

Abstract: A radiation-emitting component includes a semiconductor chip and a conversion element. The semiconductor chip includes an active layer suitable for generating electromagnetic radiation and a radiation exit face. The conversion element includes a matrix material and a luminescent material. The conversion element is arranged downstream of the radiation exit face of the semiconductor chip. The matrix material comprises at least 40 wt. % tellurium oxide and is free of boron trioxide and/or germanium oxide. A method for producing such a radiation-emitting component is furthermore stated.

Abstract: An optoelectronic semiconductor part comprising a light source, a housing and electrical connections, wherein the optoelectronic semiconductor part comprises a component which contains metal phosphate, and wherein the metal phosphate is substantially alkali-free and halogen-free.

Abstract: A unit is provided which comprises a first substrate (1) and a second substrate (2). At least one optoelectronic component (4) containing at least one organic material is arranged on the first substrate (1). The first substrate (1) and the second substrate (2) are arranged relative to one another such that the optoelectronic component (4) is arranged between the first substrate (1) and the second substrate (2). In addition, a bonding material (3) is arranged between the first substrate (1) and the second substrate (2), which material encloses the optoelectronic component (4) and bonds the first and second substrates (1, 2) together mechanically. The bonding material (3) contains silver oxide in a proportion of more than 0 wt. % and less than 100 wt. %, preferably between 5 wt. % and 80 wt. % inclusive, ideally between 10 wt. % and 70 wt. % inclusive.

Abstract: Production of an organic optoelectronic component comprising the following steps: A) providing a first substrate (1) having an active region (12) and a first connection region (11) surrounding said active region (12), wherein an organic, functional layer sequence (3) is formed in said active region (12), B) providing a second substrate (2) having a cover region (22) and a second connection region (21) surrounding said cover region (22), C) applying a first connection layer (4) made from a first glass solder material directly to said second substrate (2) in said second connection region (21), D) vitrifying (91) said first glass solder material of said first connection layer (4), E) applying a second connection layer (5) to said vitrified first connection layer (4) or to said first connection region (11) of said first substrate (1) and F) connecting said first substrate (1) to said second substrate (2) such that said second connection layer (5) connects said first connection region (11) to said first connection