Abstract: An X-ray detector includes a scintillation plate and sensors, the scintillation plate having a glass capillary array with scintillation material filling, wherein the glass capillary array with scintillation material filling is mated with two high volume, low cost, CMOS sensors, and wherein the glass capillary array is arranged diagonally to mate with active parts of the two high volume, low cost, CMOS sensors.

Abstract: An apparatus for a lead-free piezoelectric ink-jet printhead is disclosed. Piezoelectric printheads, while more expensive are favored because they use a wider variety of inks. The piezoelectric printhead includes a diaphragm, a plurality of piezoelectric actuators comprising a lead-free piezoelectric material, at least one nozzle, at least one ink chamber, a top electrode, and a drive circuit. The deflection of the diaphragm on the body chamber contributes to a pressure pulse that is used to eject a drop of liquid from the nozzle. According to an exemplary embodiment, a lead-free piezoelectric printhead operated at smaller thicknesses and significantly higher electric fields is disclosed, along with methods of making such printheads.

Abstract: An apparatus for a lead-free piezoelectric ink-jet printhead is disclosed. Piezoelectric printheads, while more expensive are favored because they use a wider variety of inks. The piezoelectric printhead includes a diaphragm, a plurality of piezoelectric actuators comprising a lead-free piezoelectric material, at least one nozzle, at least one ink chamber, a top electrode, and a drive circuit. The deflection of the diaphragm on the body chamber contributes to a pressure pulse that is used to eject a drop of liquid from the nozzle. According to an exemplary embodiment, a lead-free piezoelectric printhead operated at smaller thicknesses and significantly higher electric fields is disclosed, along with methods of making such printheads.

Abstract: An apparatus for a lead-free piezoelectric ink-jet printhead is disclosed. Piezoelectric printheads, while more expensive are favored because they use a wider variety of inks. The piezoelectric printhead includes a diaphragm, a plurality of piezoelectric actuators comprising a lead-free piezoelectric material, at least one nozzle, at least one ink chamber, a top electrode, and a drive circuit. The deflection of the diaphragm on the body chamber contributes to a pressure pulse that is used to eject a drop of liquid from the nozzle. According to an exemplary embodiment, a lead-free piezoelectric printhead operated at smaller thicknesses and significantly higher electric fields is disclosed, along with methods of making such printheads.

Abstract: An apparatus for a lead-free piezoelectric ink-jet printhead is disclosed. Piezoelectric printheads, while more expensive are favored because they use a wider variety of inks. The piezoelectric printhead includes a diaphragm, a plurality of piezoelectric actuators comprising a lead-free piezoelectric material, at least one nozzle, at least one ink chamber, a top electrode, and a drive circuit. The deflection of the diaphragm on the body chamber contributes to a pressure pulse that is used to eject a drop of liquid from the nozzle. According to an exemplary embodiment, a lead-free piezoelectric printhead operated at smaller thicknesses and significantly higher electric fields is disclosed, along with methods of making such printheads.

Abstract: An apparatus for a piezoelectric ink-jet printhead is disclosed. Piezoelectric printheads, while more expensive are favored because they use a wider variety of inks. The piezoelectric printhead includes a plurality of ink ejectors with a nozzle, an ink chamber, at least one body chamber, at least one diaphragm material, and a top electrode. The diaphragm material consists of a foil with built up piezoelectric material. The deflection of the diaphragm on the body chamber contributes to a pressure pulse that is used to eject a drop of liquid from the nozzle. According to an exemplary embodiment disclosed, a thin-film piezoelectric printhead uses existing low-cost adhesive based jet stack fabrication processed with polymers and metal foil layers and avoids the cost and complexity of a Micro-electrical-mechanical (MEMS) based fabrication system. According to another exemplary embodiment of this disclosure, provided is a thick hybrid film piezoelectric printhead.

Abstract: Oxygen partial pressure may be controlled during annealing of a perovskite dielectric layer by providing an oxygen-absorbing layer adjacent the perovskite dielectric layer, and annealing the perovskite dielectric layer in an ambient that includes an ambient oxygen partial pressure, such that the oxygen-absorbing layer locally reduces the oxygen partial pressure adjacent the perovskite dielectric layer to below the ambient oxygen partial pressure. Thus, a perovskite dielectric layer can be annealed without the need to provide ultra-high vacuum and/or ultra-high purity ambient environments.

Abstract: Dielectrics are formed having high dielectric constants, low loss tangents, and other desirable electrical and physical properties. The dielectrics are annealed at temperatures allowing the use of copper foil substrates, and at low oxygen partial pressures.

Abstract: Oxygen partial pressure may be controlled during annealing of a perovskite dielectric layer by providing an oxygen-absorbing layer adjacent the perovskite dielectric layer, and annealing the perovskite dielectric layer in an ambient that includes an ambient oxygen partial pressure, such that the oxygen-absorbing layer locally reduces the oxygen partial pressure adjacent the perovskite dielectric layer to below the ambient oxygen partial pressure. Thus, a perovskite dielectric layer can be annealed without the need to provide ultra-high vacuum and/or ultra-high purity ambient environments.

Abstract: Thin film ceramic foil capacitors are mass-produced using inline reel-to-reel processing techniques by starting (100) with a length of copper foil which serves as one plate of the capacitor, then depositing (120) a layer of a ceramic precursor on a portion of one side of the copper foil at a first station. The foil is advanced (117, 127, 137, 147) to the next station where the ceramic precursor and the copper foil are heated (130) to remove any carrier solvents or vehicles, then pyrolyzed (140) to remove any residual organic materials. It is then sintered (150) at high temperatures to convert the ceramic to polycrystalline ceramic. A final top metal layer is then deposited (160) on the polycrystalline ceramic to form the other plate of the capacitor.

Abstract: Lanthanum oxide-based gate dielectrics are provided for integrated circuit field effect transistors. The gate dielectrics may include lanthanum oxide, preferably amorphous lanthanum oxide and/or an alloy of lanthanum oxide and silicon oxide, such as lanthanum silicate (La2SiO5). Lanthanum oxide-based gate dielectrics may be fabricated by evaporating lanthanum on a silicon surface of an integrated circuit substrate. The lanthanum may be evaporated in the presence of oxygen. Lanthanum and silicon may be co-evaporated. An anneal then may be performed. Lanthanum oxide-based dielectrics also may be used for integrated circuit capacitors.

Abstract: Oxygen partial pressure may be controlled during annealing of a perovskite dielectric layer by providing an oxygen-absorbing layer adjacent the perovskite dielectric layer, and annealing the perovskite dielectric layer in an ambient that includes an ambient oxygen partial pressure, such that the oxygen-absorbing layer locally reduces the oxygen partial pressure adjacent the perovskite dielectric layer to below the ambient oxygen partial pressure. Thus, a perovskite dielectric layer can be annealed without the need to provide ultra-high vacuum and/or ultra-high purity ambient environments.

Abstract: Lanthanum oxide-based gate dielectrics are provided for integrated circuit field effect transistors. The gate dielectrics may include lanthanum oxide, preferably amorphous lanthanum oxide and/or an alloy of lanthanum oxide and silicon oxide, such as lanthanum silicate (La2SiO5). Lanthanum oxide-based gate dielectrics may be fabricated by evaporating lanthanum on a silicon surface of an integrated circuit substrate. The lanthanum may be evaporated in the presence of oxygen. Lanthanum and silicon may be co-evaporated. An anneal then may be performed. Lanthanum oxide-based dielectrics also may be used for integrated circuit capacitors.

Abstract: Lanthanum oxide-based gate dielectrics are provided for integrated circuit field effect transistors. The gate dielectrics may include lanthanum oxide, preferably amorphous lanthanum oxide and/or an alloy of lanthanum oxide and silicon oxide, such as lanthanum silicate (La2SiO5). Lanthanum oxide-based gate dielectrics may be fabricated by evaporating lanthanum on a silicon surface of an integrated circuit substrate. The lanthanum may be evaporated in the presence of oxygen. Lanthanum and silicon may be co-evaporated. An anneal then may be performed. Lanthanum oxide-based dielectrics also may be used for integrated circuit capacitors.

Abstract: Lanthanum oxide-based gate dielectrics are provided for integrated circuit field effect transistors. The gate dielectrics may include lanthanum oxide, preferably amorphous lanthanum oxide and/or an alloy of lanthanum oxide and silicon oxide, such as lanthanum silicate (La2SiO5). Lanthanum oxide-based gate dielectrics may be fabricated by evaporating lanthanum on a silicon surface of an integrated circuit substrate. The lanthanum may be evaporated in the presence of oxygen. Lanthanum and silicon may be co-evaporated. An anneal then may be performed. Lanthanum oxide-based dielectrics also may be used for integrated circuit capacitors.

Abstract: Modulated-structure polycrystalline or heteroepitaxial multilayers of PZT/PT ferroelectric thin films are deposited on a substrate, preferably by laser ablation. The laser ablation of the PZT/PT layers onto a prepared substrate occurs while maintaining the substrate at a temperature between 380.degree. C. to about 650.degree. C. The target source for the PZT/PT laser ablated film may be either bulk PZT and PT ceramics or powders or individual metal oxides or metal pellets. The ferroelectric thin film device may be used for a random access memory.