Abstract: A semiconductor laser and a fabrication method therefor. The method comprises: providing a heat sink motherboard, and cutting the heat sink motherboard to form a plurality of heat sink substrates (300) (S11); providing an epitaxial wafer (200) (S12); bonding the plurality of heat sink substrates (300) to the epitaxial wafer (200) in an array to form a plurality of gaps parallel to the direction of resonant cavities (210) and perpendicular to the direction of the resonant cavities (210) (S13); dividing the epitaxial wafer (200) along the gaps to obtain a plurality of laser chips (S14); and stacking the plurality of laser chips, and coating the plurality of stacked laser chips to form a plurality of semiconductor lasers (S15).

Abstract: Disclosed are a manufacturing method for a laser chip and a laser chip. The manufacturing method comprises: step S1, forming a first electroplating substrate on an epitaxial layer; step S2, forming an organic pattern layer on the first electroplating substrate, wherein the pattern layer defines a hollowed-out area and a part of the first electroplating substrate is exposed to the pattern layer by means of the hollowed-out area; step S3, forming a first metal coating on the first electroplating substrate, wherein the first metal coating completely covers the pattern layer and the part of the first electroplating substrate not covered by the pattern layer; and step S4, removing the pattern layer to have a hollow channel formed between the first metal coating and the first electroplating substrate, wherein the channel is provided with at least one inlet and at least one outlet running through the first metal coating.

Abstract: A semiconductor laser chip and a preparation method therefor, the method comprising: providing an epitaxial wafer (100), the epitaxial wafer (100) comprising a plurality of resonant cavities (110) arranged in parallel; providing a heat sink substrate (200); attaching the epitaxial wafer (100) to the heat sink substrate (200) so as to form a first chip semi-finished product (10); performing first division on the first chip semi-finished product (10) in the direction perpendicular to the resonant cavities (110) so as to divide the first chip semi-finished product (10) into a plurality of second chip semi-finished products (20); and performing second division on the second chip semi-finished products (20) in the direction parallel to the resonant cavities (110) so as to divide the second chip semi-finished products (20) into a plurality of semiconductor laser chips (30) such that the semiconductor laser chips (30) comprise at least one laser bar.

Abstract: A method of producing one or more vertical light-emitting diode (VLED) dies having a light-emitting diode (LED) stack comprising Group III-Group V combinations of elements (e.g., GaN, AlN, InN, AlGaN, InGaN, and InAlGaN) and a metal substrate is provided. The techniques include forming an InGaN or InAlGaN interface layer above a suitable growth-supporting substrate, such as sapphire or silicon carbide (SiC), and forming the LED stack above the interface layer. Such an interface layer may absorb a majority of the energy from a laser pulse used during laser lift-off of the growth-supporting substrate in an effort to prevent damage to the light emitting layers of the LED stack, which may result in improved brightness performance over VLED dies produced with conventional buffer layers.

Abstract: A vertical light-emitting diode (VLED) structure that may impart increased luminous efficiency over conventional LEDs and VLEDs is described. As additional benefits, some embodiments may have less susceptibility to electrostatic discharge (ESD) and higher manufacturing yields than conventional devices. To accomplish these benefits, embodiment of the invention may utilize a spacer or other means to separate the p-doped layer from the active layer, thereby increasing the distance between the active layer and the reflective layer within the VLED structure.

Abstract: A method of producing one or more vertical light-emitting diode (VLED) dies having a light-emitting diode (LED) stack comprising Group III-Group V combinations of elements (e.g., GaN, AlN, InN, AlGaN, InGaN, and InAlGaN) and a metal substrate is provided. The techniques include forming an InGaN or InAlGaN interface layer above a suitable growth-supporting substrate, such as sapphire or silicon carbide (SiC), and forming the LED stack above the interface layer. Such an interface layer may absorb a majority of the energy from a laser pulse used during laser lift-off of the growth-supporting substrate in an effort to prevent damage to the light emitting layers of the LED stack, which may result in improved brightness performance over VLED dies produced with conventional buffer layers.