Patents by Inventor Anik MEHTA

Anik MEHTA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10910281
    Abstract: A method for validating that an integrated circuit die is not susceptible to a conductive metallic ion diffusion defect is disclosed. A test component is applied to a backside surface of the integrated circuit die to form a test assembly. The test component includes a conductive metal layer and a transport media layer for facilitating diffusion of conductive metallic ions. The test assembly is heated at a thermal activation temperature. The integrated circuit die is computer validated to determine whether or not the integrated circuit die has the conductive metallic ion diffusion defect.
    Type: Grant
    Filed: January 24, 2019
    Date of Patent: February 2, 2021
    Assignee: Microsoft Technology Licensing, LLC
    Inventors: Mark Thomas McCormack, Louis Charles Kordus, II, Anik Mehta
  • Publication number: 20200243403
    Abstract: A method for validating that an integrated circuit die is not susceptible to a conductive metallic ion diffusion defect is disclosed. A test component is applied to a backside surface of the integrated circuit die to form a test assembly. The test component includes a conductive metal layer and a transport media layer for facilitating diffusion of conductive metallic ions. The test assembly is heated at a thermal activation temperature. The integrated circuit die is computer validated to determine whether or not the integrated circuit die has the conductive metallic ion diffusion defect.
    Type: Application
    Filed: January 24, 2019
    Publication date: July 30, 2020
    Applicant: Microsoft Technology Licensing, LLC
    Inventors: Mark Thomas MCCORMACK, Louis Charles KORDUS, II, Anik MEHTA