Abstract: A system for extraction of water from air includes a salt plate, a moisture absorption unit and a filter unit. The system further includes a storage unit. A method for extraction of water using the system includes placing the salt plate beneath the moisture absorption unit during a moisture absorption phase and placing the salt plate beneath the filter unit during a water extraction phase. The extracted water is stored in the storage unit for drinking and cleaning purposes. Further, a system for cleaning solar panels includes a moisture absorbing unit, a filter unit, a salt plate, a water storage unit, a solar panel, a wiper mechanism to receive water from the storage unit to clean the solar panel, and support elements to moveably support wiper mechanism.

Abstract: A system for extraction of water from air includes a salt plate, a moisture absorption unit and a filter unit. The system further includes a storage unit. A method for extraction of water using the system includes placing the salt plate beneath the moisture absorption unit during a moisture absorption phase and placing the salt plate beneath the filter unit during a water extraction phase. The extracted water is stored in the storage unit for drinking and cleaning purposes. Further, a system for cleaning solar panels includes a moisture absorbing unit, a filter unit, a salt plate, a water storage unit, a solar panel, a wiper mechanism to receive water from the storage unit to clean the solar panel, and support elements to moveably support wiper mechanism.

Abstract: A method for doping a multi-gate device is disclosed. In one aspect, the method comprises patterning a fin in a substrate, depositing a gate stack, and doping the fin. The process of doping the fin is done by depositing a blocking mask material at least on the top surface of the fin after the patterning of the gate stack. After the deposition of the blocking mask material dopant ions are implanted whereby the blocking mask material partially or completely blocks the top surface of the fin from these dopant ions.

Abstract: A method for manufacturing CMOS devices with fully silicided (FUSI) gates is described. A metallic gate electrode of an NMOS transistor and a metallic gate electrode of a pMOS transistor have a different work function. The work function of each transistor type is determined by selecting a thickness of a corresponding semiconductor gate electrode and a thermal budget of a first thermal step such that, during silicidation, different silicide phases are obtained on the nMOS and the pMOS transistors. The work function of each type of transistor can be adjusted by selectively doping the semiconductor material prior to the formation of the silicide.

Abstract: In accordance with an embodiment of the invention, a FinFET device is disclosed which comprises a strained silicon channel layer formed on, at least, the sidewalls of a strain-relaxed silicon-germanium body.