Abstract: The invention relates to an abrasive means with abrasive-active fillers. The abrasive means is comprised, in general, of a support, abrasive grit and of a binder system. In order to improve the abrasive action and the serviceable life of the abrasive means, the binding agent system contains synthetic alkali metal fluoroaluminates, and/or alkaline earth metal fluoroaluminates, in particular, alkali metal tetrafluoroaluminate, preferably potassium tetrafluoroaluminate, together with at least one additional abrasive-active filler.

Abstract: Mixtures of fluorine and inert gases like nitrogen and/or argon can be used for etching of semiconductors, solar panels and flat panels (TFTs and LCDs), and for cleaning of semiconductor surfaces and plasma chambers. Preferably, fluorine is comprised in an amount of 15 to 25 vol.-% in binary mixtures. The gas mixtures can be used as substitute or drop-in for respective mixtures comprising NF3 and permit a very flexible operation of plasma apparatus. For example, apparatus tuned for NF3/Ar mixtures can be operated without further tuning using fluorine and argon, optionally together with nitrogen. The fluorine content is preferably in the range of 1 to 5 vol.-%, if ternary mixtures of fluorine, nitrogen and argon are used.