Abstract: A method of depositing a material on a substrate is described. The method includes sputtering at least a component of the material from a first rotary target with a first magnet assembly and a second rotary target with a second magnet assembly. The first magnet assembly within the first rotary target provides a first plasma confinement in a first direction facing towards the second rotary target. The second magnet assembly within the second rotary target provides a second plasma confinement in a second direction facing towards the first rotary target.

Abstract: An AC power connector for connecting an AC power supply with a device is provided. The AC power connector includes at least one first element connectable with the AC power supply and at least one second element connectable with the device, the first element and the second elements being arranged at a first distance with respect to each other for defining a capacitance, wherein the at least one first element and the at least one second element are rotatable with respect to each other, wherein the first element and the second element are configured for a transfer of an AC power between the at least one first element and the at least one second element.

Abstract: A method for controlling a gas supply to a process chamber is provided. The method includes: measuring a gas parameter by each of two or more sensors provided in the process chamber; determining a combined gas parameter from the measured gas parameters; and controlling the gas supply to the process chamber based on the determined combined gas parameter.

Abstract: The present disclosure provides a masking device for use in a lithium deposition process in the manufacturing of thin film batteries. The masking device includes a mask portion made of a metal or metal alloy, and one or more openings in the mask portion, wherein the one or more openings are configured to allow particles of a deposition material to pass through the mask portion, and wherein a size of each opening of the one or more openings, is at least 0.5 cm2.

Abstract: A method for controlling a gas supply to a process chamber is provided. The method includes: measuring a gas parameter by each of two or more sensors provided in the process chamber; determining a combined gas parameter from the measured gas parameters; and controlling the gas supply to the process chamber based on the determined combined gas parameter.

Abstract: An AC power connector for connecting an AC power supply with a device is provided. The AC power connector includes at least one first element connectable with the AC power supply and at least one second element connectable with the device, the first element and the second elements being arranged at a first distance with respect to each other for defining a capacitance, wherein the at least one first element and the at least one second element are rotatable with respect to each other, wherein the first element and the second element are configured for a transfer of an AC power between the at least one first element and the at least one second element.

Abstract: A method for controlling a gas supply to a process chamber is provided. The method includes: measuring a gas parameter by each of two or more sensors provided in the process chamber; determining a combined gas parameter from the measured gas parameters; and controlling the gas supply to the process chamber based on the determined combined gas parameter.

Abstract: The present disclosure relates to a method for producing an indium-tin-oxide layer, comprising: providing a substrate to be coated in a sputtering chamber; providing a rotatable non-bonded target around a backing tube for coating the substrate in the sputtering chamber; and sputtering the material from the target in an atmosphere containing an O2/H2 mixture. Further the present disclosure relates to a sputtering system comprising a sputtering chamber having at least one gas inlet and being adapted for at least one backing tube for a non-bonded rotatable target, a control device adapted to control the flow through the gas inlet, wherein the control device is adapted to control the at least one gas inlet such that a coating on a substrate using a sputtering process is performed in an atmosphere containing an O2 /H2 mixture in the sputtering chamber for forming an indium-tin-oxide layer.

Abstract: The disclosure concerns a magnet arrangement for a target backing tube for a rotatable target of a sputtering system, the magnet arrangement having a longitudinal axis and a circumferential direction around the longitudinal axis, and being adapted for an arrangement in a cylindrical backing tube, wherein the magnet arrangement comprises in a circumferential sequence: a first magnet element extending in parallel to the longitudinal axis, a second magnet element extending in parallel to the longitudinal axis, and a third magnet element extending in parallel to the longitudinal axis, wherein each magnet element has a center axis extending in a radial direction, wherein the angular distance between the first and the third magnet elements, with respect to their center axis, is less than about 85 degrees. The disclosure also concerns a cylindrical target assembly and at least one target cylinder disposed around the target backing tube.

Abstract: A target backing tube is described. The target backing tube is for a rotatable target and includes a tube adapted for one or more non-bonded target cylinders to be disposed around the tube, the tube having an exterior surface adapted to face the at least one target cylinder and at least three or more protrusion receiving positions; and protrusions mounted on the exterior surface of the tube at each of the protrusion receiving positions for centering the target cylinders.

Abstract: The application concerns a target backing tube for a rotatable cylindrical target assembly comprising: a tube for at least one target element to be disposed there around, wherein the tube has an exterior surface adapted to face the at least one target element, wherein a portion of the exterior surface of the tube has a mean emissivity of 0.7 to 1, wherein the portion is at least 50% of the exterior surface of the tube. Further, the application concerns a cooling shield for a sputtering system comprising a rotatable target, the cooling shield has an interior surface adapted to face a target element of a sputtering system and an exterior surface; wherein a portion of the interior surface of the cooling shield has a mean emissivity of 0.7 to 1, wherein the portion is at least 50% of the interior surface of the cooling shield.

Abstract: The present application concerns a target backing tube for a rotatable cylindrical target assembly comprising: a tube for at least one target element to be disposed there around, wherein the tube has an exterior surface adapted to be directed to the at least one target element; and a thermal reflection cover covering a portion of at least 20% of the exterior surface of the tube. Further, the present application concerns a rotatable cylindrical target assembly comprising: said target backing tube and at least one target element disposed around the target backing tube, wherein the thermal reflection cover disposed between the target backing tube and the at least one target element.

Abstract: The present invention concerns a device and a method for coating substrates by means of sputtering a coating material in the form of a target, wherein the target is cooled during sputtering by means of a cooling medium fed at the target or past the region of the target or through the target, and the cooling medium has a feed temperature of less than 20° C.

Abstract: In a process for surface-finishing inner surfaces of hollow bodies with at east one opening the hollow body is finished from inside by means of a hollow-cathode glow discharge as the excitation source.