Patents by Inventor Anke Husmann

Anke Husmann has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7641389
    Abstract: A sensor comprises a reference sample arranged to be subject to at least one variable physical parameter such that a variation in the value of the at least one variable physical parameter causes a change in the magnetisation of the reference sample, means for measuring the magnetisation of the reference sample, and means for determining in dependence upon the measured magnetisation whether there has been a variation in the value of the at least one variable physical parameter, wherein the reference sample comprises a Heusler alloy.
    Type: Grant
    Filed: March 15, 2007
    Date of Patent: January 5, 2010
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Anke Husmann, Michael Pepper
  • Publication number: 20070267596
    Abstract: A sensor comprises a reference sample arranged to be subject to at least one variable physical parameter such that a variation in the value of the at least one variable physical parameter causes a change in the magnetisation of the reference sample, means for measuring the magnetisation of the reference sample, and means for determining in dependence upon the measured magnetisation whether there has been a variation in the value of the at least one variable physical parameter, wherein the reference sample comprises a Heusler alloy.
    Type: Application
    Filed: March 15, 2007
    Publication date: November 22, 2007
    Applicant: Toshiba Research Europe Limited
    Inventors: Anke HUSMANN, Michael Pepper
  • Patent number: 6316131
    Abstract: The heavily-doped silver chalcogenides, Ag2+&dgr;Se and Ag2+&dgr;Te, show magnetoresistance effects on a scale comparable to the “colossal” magnetoresistance (CMR) compounds. Hall coefficient, magnetoconductivity, and hydrostatic pressure experiments establish that elements of narrow-gap semiconductor physics apply, but both the size of the effects at room temperature and the linear field dependence down to fields of a few Oersteds are surprising new features.
    Type: Grant
    Filed: September 10, 1998
    Date of Patent: November 13, 2001
    Assignee: The United States of America as represented by the United States Department of Energy
    Inventors: Marie-Louis Saboungi, David C. L. Price, Thomas F. Rosenbaum, Rong Xu, Anke Husmann