Abstract: Antisense oligomers complementary to a selected target site in the human dystrophin gene to induce exon 50 skipping are described. In various aspects, antisense oligomers are described according to Formula (I): or a pharmaceutically acceptable salt thereof, wherein T, Nu, n, and R100 are defined herein.

Abstract: Antisense oligomers complementary to a selected target site in the human dystrophin gene to induce exon 50 skipping are described. In various aspects, antisense oligomers are described according to Formula (I): or a pharmaceutically acceptable salt thereof, wherein T, Nu, n, and R100 are defined herein.

Abstract: A functional electrical stimulation method for rehabilitating, treating, retraining, and/or otherwise improving upper extremity mobility and control in persons having impaired or disabled upper extremities due to stroke or spinal cord injury, comprising stimulation of the lumbricalis muscles.

Abstract: A functional electrical stimulation method for rehabilitating, treating, retraining, and/or otherwise improving upper extremity mobility and control in persons having impaired or disabled upper extremities due to stroke or spinal cord injury, comprising stimulation of the lumbricalis muscles.

Abstract: The present invention relates to novel methods of synthesis and isolation of dendrimer systems. In particular, the present invention is directed to novel dendrimer conjugates with defined and limited numbers of ligand conjugates and high levels of structural uniformity, methods of synthesizing the same, compositions comprising the conjugates, as well systems and methods utilizing the conjugates (e.g., in diagnostic and/or therapeutic settings (e.g., for the delivery of therapeutics, imaging, and/or targeting agents (e.g., in disease (e.g., cancer) diagnosis and/or therapy, pain therapy, etc.)).

Abstract: A method of processing a semiconductor wafer sliced from a single-crystal ingot and having front and back surfaces and a peripheral edge comprises the step of plasma jet etching the wafer to reduce the sub-surface wafer damage. The method further comprises high-gloss etching the wafer by subjecting the wafer to a high-gloss etchant that smooths the wafer such that surface roughness and nonspecularly reflected light are reduced. Plasma assisted chemical etching (PACE) is performed on the wafer to improve the flatness and the thickness uniformity of the wafer. The wafer is final polished to further reduce surface roughness and nonspecularly reflected light.

Abstract: A process for reducing the waviness of a semiconductor wafer utilizing plasma assisted chemical etching is disclosed. The process includes measuring the surface profile at discrete points on one surface of the wafer independent from the apposing surface, computing a dwell time versus position map based on the measured surface profiles, and selectively removing material from each surface of the wafer by plasma assisted chemical etching to reduce the waviness of the wafer.