Abstract: A method including removing an impurity from a gas stream to a processing chamber at a point of use. An apparatus with a point of use purifier on a gas stream. An apparatus including a shelf having dimensions suitable for placement within a thermal processing including a body of a material that renders the body opaque to radiation frequency range used for a temperature measurement of a substrate in a thermal processing chamber.

Abstract: A method including removing an impurity from a gas stream to a processing chamber at a point of use. An apparatus with a point of use purifier on a gas stream. An apparatus including a shelf having dimensions suitable for placement within a thermal processing including a body of a material that renders the body opaque to radiation frequency range used for a temperature measurement of a substrate in a thermal processing chamber.

Abstract: A method for determining a wafer characteristic, such as the surface quality of a film formed on the wafer, using a film thickness monitor is described. In one embodiment, the method comprises the following steps. A measured spectrum for a processed wafer is generated. A set of parameters is chosen and then used to generate a calculated spectrum. The measured spectrum is compared to the calculated spectrum to determine if the two spectra match. If the two spectra do not match or the degree of nonconformity between the two spectra is greater than an acceptable error value, then there is probably a defect with the processed wafer. For example, the film formed on the wafer may have a nonuniform or hazy surface quality.

Abstract: A method of removing contaminants from a surface in a silicon substrate processing chamber. The method includes coating the surface which has been exposed to contaminants including metal particles with a material preferably including silicon. During coating, contaminants are collected by the material being applied. The method further includes removing the material and any contaminants that have been collected by the material during coating. The method can be performed after the surface has been exposed to contaminants from ambient air or moisture during cleaning or preventive maintenance procedures, for example. Also, the method is preferably performed before any baking procedures or before the chamber is heated to drive out any moisture that has been introduced to the chamber.

Abstract: A method and apparatus for measuring a reference sample in order to collect a reference characteristic, without moving the reference sample, is disclosed. In one embodiment, the method of the present invention comprises the following steps. An operator places a cassette of unprocessed wafers into a processing chamber of a processing tool that also includes a holding chamber. While the wafers are being processed, the holding chamber, which is coupled to a measurement tool, measures the reference sample that is mounted on a stage in the holding chamber. The resulting reference characteristic value (e.g., spectrum to determine film thickness) is then stored in the measurement tool's computer system. After a film is grown/formed on the wafers, the processed wafers are moved one by one into the holding chamber to be measured. A first wafer is placed on the stage in the holding chamber and a characteristic value for the first processed wafer is obtained using the measurement tool.