Abstract: A microelectromechanical (MEMS) Fabry-Perot interferometer includes a transparent substrate; a first metallic mirror structure on the transparent substrate, including a first metal layer and a first support layer; a second metallic mirror structure above the first metallic mirror structure on an opposite side of the first metallic mirror structure in view of the transparent substrate, the second metallic mirror structure including a second metal layer and a second support layer, wherein the first and the second support layer are parallel and including at least one of aluminum oxide or titanium dioxide; a Fabry-Perot cavity between the first and the second support layer, whereby the Fabry-Perot cavity is formed by providing an insulation layer on the first mirror structure, and at least partially removing the insulation layer after providing the second mirror structure; and electrodes for providing electrical contacts to the first and the second metal layer.

Abstract: A microelectromechanical (MEMS) Fabry-Perot interferometer includes a transparent substrate; a first metallic mirror structure on the transparent substrate, including a first metal layer and a first support layer; a second metallic mirror structure above the first metallic mirror structure on an opposite side of the first metallic mirror structure in view of the transparent substrate, the second metallic mirror structure including a second metal layer and a second support layer, wherein the first and the second support layer are parallel and including at least one of aluminum oxide or titanium dioxide; a Fabry-Perot cavity between the first and the second support layer, whereby the Fabry-Perot cavity is formed by providing an insulation layer on the first mirror structure, and at least partially removing the insulation layer after providing the second mirror structure; and electrodes for providing electrical contacts to the first and the second metal layer.

Abstract: A mirror plate (100) for a Fabry-Perot interferometer (300) includes a substrate (50), which includes silicon (Si), a semi-transparent reflective coating (110) implemented on the substrate (50), a de-coupling structure (DC1) formed on the substrate (50), a first sensor electrode (G1a) formed on top of the de-coupling structure (DC1), and a second sensor electrode (G1b), wherein the de-coupling structure (DC1) includes an electrically insulating layer (60a), and a first stabilizing electrode (G0a), which is located between the first sensor electrode (G1a) and the substrate (50).

Abstract: A mirror plate (100) for a Fabry-Perot interferometer (300) includes a substrate (50), which includes silicon (Si), a semi-transparent reflective coating (110) implemented on the substrate (50), a de-coupling structure (DC1) formed on the substrate (50), a first sensor electrode (G1a) formed on top of the de-coupling structure (DC1), and a second sensor electrode (G1b), wherein the de-coupling structure (DC1) includes an electrically insulating layer (60a), and a first stabilizing electrode (G0a), which is located between the first sensor electrode (G1a) and the substrate (50).

Abstract: A method for producing a mirror plate for a Fabry-Perot interferometer includes providing a base slab, which includes a substrate coated with a reflective multilayer coating, forming one or more intermediate layers on the base slab such that the lowermost intermediate layer substantially consists of silica, and such that the multilayer coating is at least partially covered by the lowermost intermediate layer, forming one or more capacitive sensor electrodes by depositing conductive material on top of the intermediate layers, and removing material of the lowermost intermediate layer by etching in order to form an exposed aperture portion of the multilayer coating.

Abstract: A method for producing a mirror plate for a Fabry-Perot interferometer includes providing a base slab, which includes a substrate coated with a reflective multilayer coating, forming one or more intermediate layers on the base slab such that the lowermost intermediate layer substantially consists of silica, and such that the multilayer coating is at least partially covered by the lowermost intermediate layer, forming one or more capacitive sensor electrodes by depositing conductive material on top of the intermediate layers, and removing material of the lowermost intermediate layer by etching in order to form an exposed aperture portion of the multilayer coating.