Patents by Inventor Anna Tauke-Pedretti
Anna Tauke-Pedretti has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11482560Abstract: A monolithically integrated, tunable infrared pixel comprises a combined broadband detector and graphene-enabled tunable metasurface filter that operate as a single solid-state device with no moving parts. Functionally, tunability results from the plasmonic properties of graphene that are acutely dependent upon the carrier concentration within the infrared. Voltage induced changes in graphene's carrier concentration can be leveraged to change the metasurface filter's transmission thereby altering the “colors” of light reaching the broadband detector and hence its spectral responsivity. The invention enables spectrally agile infrared detection with independent pixel-to-pixel spectral tunability.Type: GrantFiled: July 16, 2020Date of Patent: October 25, 2022Assignee: National Technology & Engineering Solutions of Sandia, LLCInventors: Thomas Edwin Beechem, III, Michael Goldflam, Anna Tauke-Pedretti, Isaac Ruiz, David W. Peters, Stephen W. Howell
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Publication number: 20200350356Abstract: A monolithically integrated, tunable infrared pixel comprises a combined broadband detector and graphene-enabled tunable metasurface filter that operate as a single solid-state device with no moving parts. Functionally, tunability results from the plasmonic properties of graphene that are acutely dependent upon the carrier concentration within the infrared. Voltage induced changes in graphene's carrier concentration can be leveraged to change the metasurface filter's transmission thereby altering the “colors” of light reaching the broadband detector and hence its spectral responsivity. The invention enables spectrally agile infrared detection with independent pixel-to-pixel spectral tunability.Type: ApplicationFiled: July 16, 2020Publication date: November 5, 2020Inventors: Thomas Edwin Beechem, III, Michael Goldflam, Anna Tauke-Pedretti, Isaac Ruiz, David W. Peters, Stephen W. Howell
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Patent number: 10666222Abstract: An amplifying radiofrequency device includes a piezoelectric film and a semiconductor amplifier layer. The piezoelectric film is conformed as an acoustic waveguide. The piezoelectric film has a principal acoustic propagation direction parallel to the principal conduction direction of the amplifier layer. Interdigitated transducers are positioned on the piezoelectric film to respectively launch an acoustic wave in response to an input RF signal, and transduce the acoustic wave back to an output RF signal. There is a distance of less than the acoustic wavelength between the semiconductor amplifier layer and the piezoelectric film. The piezoelectric film has a thickness of less than the acoustic wavelength. According to a method for making such a device, a stack of III-V layers is epitaxially grown on a III-V substrate, wherein the stack comprises a first etch stop layer, a second etch stop layer, an amplifier layer, and a contact layer. The stack is bonded to a lithium niobate film.Type: GrantFiled: September 28, 2017Date of Patent: May 26, 2020Inventors: Matt Eichenfield, Roy Olsson, Anna Tauke-Pedretti, Andrew Leenheer, Aleem Siddiqui, Thomas A. Friedmann
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Patent number: 9929293Abstract: In a superlattice (SL) photodetector, each period of the SL includes first and second semiconductor layers having different compositions, at least one of which comprises indium arsenide (InAs). At least one of these two semiconductor layers has a graded composition. In embodiments, the first semiconductor layer comprises InAs and the second semiconductor layer is a graded layer comprising indium arsenide antimonide (InAsSb), wherein the antimony (Sb) concentration is varied. In examples, the Sb concentration in the second layer gradually increases from the top and bottom toward the middle of the layer.Type: GrantFiled: April 4, 2017Date of Patent: March 27, 2018Assignee: National Technology & Engineering Solutions of Sandia, LLCInventors: Jin K. Kim, John F. Klem, Eric A. Shaner, Benjamin Varberg Olson, Emil Andrew Kadlec, Anna Tauke-Pedretti, Torben Ray Fortune
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Patent number: 9831369Abstract: A photovoltaic power generation system that includes a solar panel is described herein. The solar panel includes a photovoltaic sub-module, which includes a group of microsystem enabled photovoltaic cells. The group includes a first string of photovoltaic cells, a second string of photovoltaic cells, and a differing photovoltaic cell. Photovoltaic cells in the first string are electrically connected in series, and photovoltaic cells in the second string are electrically connected in series. Further, the first string of photovoltaic cells, the second string of photovoltaic cells, and the differing photovoltaic cell are electrically connected in parallel. Moreover, the differing photovoltaic cell is used as a bypass diode for the first string of photovoltaic cells and the second string of photovoltaic cells.Type: GrantFiled: October 24, 2013Date of Patent: November 28, 2017Assignee: National Technology & Engineering Solutions of Sandia, LLCInventors: Anthony L. Lentine, Gregory N. Nielson, Anna Tauke-Pedretti, Jose Luis Cruz-Campa, Murat Okandan
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Patent number: 9740079Abstract: A beam-steering optical transceiver is provided. The transceiver includes one or more modules, each comprising an antenna chip and a control chip bonded to the antenna chip. Each antenna chip has a feeder waveguide, a plurality of row waveguides that tap off from the feeder waveguide, and a plurality of metallic nanoantenna elements arranged in a two-dimensional array of rows and columns such that each row overlies one of the row waveguides. Each antenna chip also includes a plurality of independently addressable thermo-optical phase shifters, each configured to produce a thermo-optical phase shift in a respective row. Each antenna chip also has, for each row, a row-wise heating circuit configured to produce a respective thermo-optic phase shift at each nanoantenna element along its row. The control chip includes controllable current sources for the independently addressable thermo-optical phase shifters and the row-wise heating circuits.Type: GrantFiled: October 28, 2016Date of Patent: August 22, 2017Assignee: National Technology & Engineering Solutions of Sandia, LLCInventors: Paul Davids, Christopher DeRose, Anna Tauke-Pedretti
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Patent number: 9599781Abstract: The present invention relates to optical vias to optically connect multilevel optical circuits. In one example, the optical via includes a surface plasmon polariton waveguide, and a first optical waveguide formed on a first substrate is coupled to a second optical waveguide formed on a second substrate by the surface plasmon polariton waveguide. In some embodiments, the first optical waveguide includes a transition region configured to convert light from an optical mode to a surface plasmon polariton mode or from a surface plasmon polariton mode to an optical mode.Type: GrantFiled: September 8, 2015Date of Patent: March 21, 2017Assignee: Sandia CorporationInventors: Erik J. Skogen, Gregory A. Vawter, Anna Tauke-Pedretti
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Patent number: 9508881Abstract: A microsystems-enabled multi-junction photovoltaic (MEM-PV) cell includes a first photovoltaic cell having a first junction, the first photovoltaic cell including a first semiconductor material employed to form the first junction, the first semiconductor material having a first bandgap. The MEM-PV cell also includes a second photovoltaic cell comprising a second junction. The second photovoltaic cell comprises a second semiconductor material employed to form the second junction, the second semiconductor material having a second bandgap that is less than the first bandgap, the second photovoltaic cell further comprising a first contact layer disposed between the first junction of the first photovoltaic cell and the second junction of the second photovoltaic cell, the first contact layer composed of a third semiconductor material having a third bandgap, the third bandgap being greater than or equal to the first bandgap.Type: GrantFiled: October 11, 2012Date of Patent: November 29, 2016Assignee: Sandia CorporationInventors: Anna Tauke-Pedretti, Jeffrey Cederberg, Gregory N. Nielson, Murat Okandan, Jose Luis Cruz-Campa
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Publication number: 20150221627Abstract: An apparatus is disclosed that includes a first plurality of devices made of a group III-V semiconductor material and a second plurality of devices made of a semiconductor material different than the material of the first plurality of devices that are bonded to the first plurality of devices. The apparatus also includes a dielectric layer surrounding the first plurality of devices and the second plurality of devices to mechanically bond the first plurality of devices to the second plurality of devices.Type: ApplicationFiled: September 25, 2013Publication date: August 6, 2015Inventors: Gregory N. Nielson, Carlos Anthony Sanchez, Anna Tauke-Pedretti, Bonsang Kim, Jeffrey Cederberg, Murat Okandan, Jose Luis Cruz-Campa, Paul J. Resnick
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Patent number: 9029239Abstract: A method includes etching a release layer that is coupled between a plurality of semiconductor devices and a substrate with an etch. The etching includes etching the release layer between the semiconductor devices and the substrate until the semiconductor devices are at least substantially released from the substrate. The etching also includes etching a protuberance in the release layer between each of the semiconductor devices and the substrate. The etch is stopped while the protuberances remain between each of the semiconductor devices and the substrate. The method also includes separating the semiconductor devices from the substrate. Other methods and apparatus are also disclosed.Type: GrantFiled: October 30, 2013Date of Patent: May 12, 2015Assignee: Sandia CorporationInventors: Anna Tauke-Pedretti, Gregory N. Nielson, Jeffrey G. Cederberg, Jose Luis Cruz-Campa
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Publication number: 20150114444Abstract: A photovoltaic power generation system that includes a solar panel is described herein. The solar panel includes a photovoltaic sub-module, which includes a group of microsystem enabled photovoltaic cells. The group includes a first string of photovoltaic cells, a second string of photovoltaic cells, and a differing photovoltaic cell. Photovoltaic cells in the first string are electrically connected in series, and photovoltaic cells in the second string are electrically connected in series. Further, the first string of photovoltaic cells, the second string of photovoltaic cells, and the differing photovoltaic cell are electrically connected in parallel. Moreover, the differing photovoltaic cell is used as a bypass diode for the first string of photovoltaic cells and the second string of photovoltaic cells.Type: ApplicationFiled: October 24, 2013Publication date: April 30, 2015Applicant: Sandia CorporationInventors: Anthony L. Lentine, Gregory N. Nielson, Anna Tauke-Pedretti, Joseq Luis Cruz-Campa, Murat Okandan
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Patent number: 8946052Abstract: A method includes forming a release layer over a donor substrate. A plurality of devices made of a first semiconductor material are formed over the release layer. A first dielectric layer is formed over the plurality of devices such that all exposed surfaces of the plurality of devices are covered by the first dielectric layer. The plurality of devices are chemically attached to a receiving device made of a second semiconductor material different than the first semiconductor material, the receiving device having a receiving substrate attached to a surface of the receiving device opposite the plurality of devices. The release layer is etched to release the donor substrate from the plurality of devices. A second dielectric layer is applied over the plurality of devices and the receiving device to mechanically attach the plurality of devices to the receiving device.Type: GrantFiled: September 26, 2012Date of Patent: February 3, 2015Assignee: Sandia CorporationInventors: Gregory N. Nielson, Carlos Anthony Sanchez, Anna Tauke-Pedretti, Bongsang Kim, Jeffrey Cederberg, Murat Okandan, Jose Luis Cruz-Campa, Paul J. Resnick
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Patent number: 8730562Abstract: An optical sampler includes a first and second 1×n optical beam splitters splitting an input optical sampling signal and an optical analog input signal into n parallel channels, respectively, a plurality of optical delay elements providing n parallel delayed input optical sampling signals, n photodiodes converting the n parallel optical analog input signals into n respective electrical output signals, and n optical modulators modulating the input optical sampling signal or the optical analog input signal by the respective electrical output signals, and providing n successive optical samples of the optical analog input signal. A plurality of output photodiodes and eADCs convert the n successive optical samples to n successive digital samples. The optical modulator may be a photodiode interconnected Mach-Zehnder Modulator. A method of sampling the optical analog input signal is disclosed.Type: GrantFiled: November 9, 2011Date of Patent: May 20, 2014Assignee: Sandia CorporationInventors: Anna Tauke-Pedretti, Erik J. Skogen, Gregory A. Vawter
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Patent number: 8687665Abstract: Semiconductor light-emitting devices; methods of forming semi-conductor light emitting devices, and methods of operating semi-conductor light emitting devices are provided. A semiconductor light-emitting device includes a first laser section monolithically integrated with a second laser section on a common substrate. Each laser section has a phase section, a gain section and at least one distributed Bragg reflector (DBR) structure. The first laser section and the second laser section are optically coupled to permit optical feedback therebetween. Each phase section is configured to independently tune a respective one of the first laser section and second laser section relative to each other.Type: GrantFiled: September 15, 2011Date of Patent: April 1, 2014Assignee: Sandia CorporationInventors: Anna Tauke-Pedretti, Erik J. Skogen, Gregory A. Vawter, Weng W. Chow
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Publication number: 20140048123Abstract: A method includes etching a release layer that is coupled between a plurality of semiconductor devices and a substrate with an etch. The etching includes etching the release layer between the semiconductor devices and the substrate until the semiconductor devices are at least substantially released from the substrate. The etching also includes etching a protuberance in the release layer between each of the semiconductor devices and the substrate. The etch is stopped while the protuberances remain between each of the semiconductor devices and the substrate. The method also includes separating the semiconductor devices from the substrate. Other methods and apparatus are also disclosed.Type: ApplicationFiled: October 30, 2013Publication date: February 20, 2014Applicant: Sandia CorporationInventors: Anna Tauke-Pedretti, Gregory N. Nielson, Jeffrey G. Cederberg, Jose Luis Cruz-Campa
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Patent number: 8014639Abstract: An optical NOR gate is formed from two pair of optical waveguide devices on a substrate, with each pair of the optical waveguide devices consisting of an electroabsorption modulator electrically connected in series with a waveguide photodetector. The optical NOR gate utilizes two digital optical inputs and a continuous light input to provide a NOR function digital optical output. The optical NOR gate can be formed from III-V compound semiconductor layers which are epitaxially deposited on a III-V compound semiconductor substrate, and operates at a wavelength in the range of 0.8-2.0 ?m.Type: GrantFiled: November 13, 2008Date of Patent: September 6, 2011Inventors: Erik J. Skogen, Anna Tauke-Pedretti
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Patent number: 7995877Abstract: An optical NAND gate is formed from two pair of optical waveguide devices on a substrate, with each pair of the optical waveguide devices consisting of an electroabsorption modulator and a photodetector. One pair of the optical waveguide devices is electrically connected in parallel to operate as an optical AND gate; and the other pair of the optical waveguide devices is connected in series to operate as an optical NOT gate (i.e. an optical inverter). The optical NAND gate utilizes two digital optical inputs and a continuous light input to provide a NAND function output. The optical NAND gate can be formed from III-V compound semiconductor layers which are epitaxially deposited on a III-V compound semiconductor substrate, and operates at a wavelength in the range of 0.8-2.0 ?m.Type: GrantFiled: July 30, 2008Date of Patent: August 9, 2011Assignee: Sandia CorporationInventors: Erik J. Skogen, James Raring, Anna Tauke-Pedretti