Abstract: The invention provides a composition for a conductive polymeric material suitable for the production of electrodes for recording electrophysiological signals, such as electrocardiogram (EGG), electromyogram (EMG), electroencephalogram (EEG), etc and signals related to the impedance variation of the body or skin, both deriving from active and passive measures (for example, breathing, electrodermal response, etc.). For this purpose a formulation containing FEDOT and ionic liquids has been developed. The formulation according to the invention can be used generically in the context of detecting bioelectric signals and can be applied on wearable items, in particular in fabric, such as for example garments of different shapes, so as to be in direct contact with the areas of the body subject to detection.

Abstract: A sensorized garment is provided. The sensorized garment includes an wearable element on a skin having a hand-tightening or a closure device to securely constrain sensors, for example electrodes to detect electrophysiological signals, during a physical activity. The wearable element has a three-dimensional shape to uniquely define a right side and a left part of a circumferential zone when the wearable element is worn. The sensorized garment further includes a band carried by the circumferential zone, and at least one conductor connected between the sensor and a zone of the sensorized garment.

Abstract: An organic transistor-based system for electrophysiological monitoring of cells is disclosed. The system includes a plurality of organic transistors each comprising: a floating gate electrode; a source electrode and a drain electrode; an organic semiconductor; an insulating layer; and a sensing area. A barrier mechanically separates said sensing area and a transistor area. Each organic transistor includes a control gate electrode coupled to a second portion of said floating gate electrode external to said sensing area by a capacitor. The control gate electrode is separated from said floating gate electrode by said insulating layer. The control gate electrode sets a working point of the organic transistor to which the control gate electrode belongs to by a control voltage (VGS) applied to it. In each organic transistor, an overlapping area defined by said control gate electrode formed above said floating gate is comprised between 9*10?4 cm2 and 2*10?3 cm2.

Abstract: An organic transistor-based system for electrophysiological monitoring of cells is disclosed. The system includes a plurality of organic transistors each comprising: a floating gate electrode; a source electrode and a drain electrode; an organic semiconductor; an insulating layer; and a sensing area. A barrier mechanically separates said sensing area and a transistor area. Each organic transistor includes a control gate electrode coupled to a second portion of said floating gate electrode external to said sensing area by a capacitor. The control gate electrode is separated from said floating gate electrode by said insulating layer. The control gate electrode sets a working point of the organic transistor to which the control gate electrode belongs to by a control voltage (VGS) applied to it. In each organic transistor, an overlapping area defined by said control gate electrode formed above said floating gate is comprised between 9*10?4 cm2 and 2*10?3 cm2.

Abstract: The invention relates to a conductive fiber material comprising a base fiber material (1) including a textile fiber, a plurality of nanoparticles (20) deposited on an external surface (10) of said base fiber material, said nanoparticles including one or more metals or metal oxides and a conductive polymer layer deposited on said external surface including nanoparticles.

Abstract: Organic thin film devices that included an organic thin film subjected to a selected dose of a selected energy of ions exhibited a stabilized mobility (?) and threshold voltage (VT), a decrease in contact resistance RC, and an extended operational lifetime that did not degrade after 2000 hours of operation in the air.

Abstract: Organic thin film devices that included an organic thin film subjected to a selected dose of a selected energy of ions exhibited a stabilized mobility (?) and threshold voltage (VT), a decrease in contact resistance RC, and an extended operational lifetime that did not degrade after 2000 hours of operation in the air.

Abstract: The device (1) allows the detection of small quantities of electrical charge (Qs) utilised for recognition of the gybridisation process of a single strand of DNA. It comprises a chip (2) in which is integrated an MOS device having a floating gate (7) a first portion (7a) of which extends in facing relation to a recess (8) formed in a surface of the chip (2) and accessible from outside the chip (2) and operable to retain an electrical charge (Qs) to be measured bound to it. A second portion (7b) of the gate (7) of the MOS device is coupled to a control electrode, (10) of the chip (2) by means of a capacitor (12) of predetermined value within the chip (2).

Abstract: A method for the manufacture of a thin-film field-effect device comprising, on a mechanical support layer, source and drain electrodes (S, D), a layer of semiconductor material (SC) for the formation of a conduction channel, and a gate electrode (G) insulated from the channel region, is described. The method provides for the use of a mechanical support layer in the form of a film (INS) of flexible, electrically-insulating material; for the formation of the source and drain electrodes (S, D) in accordance with a predetermined configuration on a first surface of the insulating film; and for the formation of the gate electrode (G) on the opposite surface of the insulating film (INS) in accordance with a predetermined configuration complementary with the configuration of the source and drain electrodes (S, D), that configuration being achieved by a lithographic technique by selective masking determined by the source and drain electrodes (S, D) which are formed on the first surface of the film (INS).

Abstract: A method for the manufacture of a thin-film field-effect device comprising, on a mechanical support layer, source and drain electrodes (S, D), a layer of semiconductor material (SC) for the formation of a conduction channel, and a gate electrode (G) insulated from the channel region, is described. The method provides for the use of a mechanical support layer in the form of a film (INS) of flexible, electrically insulating material; for the formation of the source and drain electrodes (S, D) in accordance with a predetermined configuration on a first surface of the insulating film; and for the formation of the gate electrode (G) on the opposite surface of the insulating film (INS) in accordance with a predetermined configuration complementary with the configuration of the source and drain electrodes (S, D), that configuration being achieved by a lithographic technique by selective masking determined by the source and drain electrodes (S, D) which are formed on the first surface of the film (INS).

Abstract: The device (1) allows the detection of small quantities of electrical charge (Qs) utilised for recognition of the gybridisation process of a single strand of DNA. It comprises a chip (2) in which is integrated an MOS device having a floating gate (7) a first portion (7a) of which extends in facing relation to a recess (8) formed in a surface of the chip (2) and accessible from outside the chip (2) and operable to retain an electrical charge (Qs) to be measured bound to it. A second portion (7b) of the gate (7) of the MOS device is coupled to a control electrode, (10) of the chip (2) by means of a capacitor (12) of predetermined value within the chip (2).

Abstract: A method for the manufacture of a thin-film field-effect device comprising, on a mechanical support layer, source and drain electrodes (S, D), a layer of semiconductor material (SC) for the formation of a conduction channel, S and a gate electrode (G) insulated from the channel region, is described. The method provides for the use of a mechanical support layer in the form of a film (INS) of flexible, electrically insulating material; for the formation of the source and drain electrodes (S, D) in accordance with a predetermined configuration on a first surface of the insulating film; and for the formation of the gate electrode (G) on the opposite surface of the insulating film (INS) in accordance with a predetermined configuration complementary with the configuration of the source and drain electrodes (S, D), that configuration being achieved by a lithographic technique by selective masking determined by the source and drain electrodes (S, D) which are formed on the first surface of the film (INS).