Patents by Inventor Annamalai Lakshmanan
Annamalai Lakshmanan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230343645Abstract: A method and apparatus for a gap-fill in semiconductor devices are provided. The method includes forming a metal seed layer on exposed top surface of the substrate, wherein the substrate has features in the form of trenches or vias formed in the top surface of the substrate, the features having sidewalls and a bottom surface extending between the sidewalls. A gradient oxidation process is performed to oxidize exposed portions of the metal seed layer to form a metal oxide, wherein the gradient oxidation process preferentially oxidizes a field region of the substrate over the bottom surface of the features. An etch back process removes the oxidized portion of the seed layer. A second etch process removes portions of the seed layer. A metal gap-fill process fills or partially fills the features with a gap fill material.Type: ApplicationFiled: March 30, 2023Publication date: October 26, 2023Inventors: Meng-Shan WU, Chih-Hsun HSU, Jiang LU, Shiyu YUE, Chun-chieh WANG, Annamalai LAKSHMANAN, Yixiong YANG
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Publication number: 20230343643Abstract: A method and apparatus for a gap-fill in semiconductor devices are provided. The method includes forming a metal seed layer on an exposed surface of the substrate, wherein the substrate has features in the form of trenches or vias formed in a top surface of the substrate, the features having sidewalls and a bottom surface extending between the sidewalls. A gradient oxidation process is performed to oxidize exposed portions of the metal seed layer to form a metal oxide, wherein the gradient oxidation process preferentially oxidizes a field region of the substrate over the bottom surface of the features. An etch back process removes or reduces the oxidized portion of the seed layer. A metal gap-fill process fills or partially fills the features with a gap fill material.Type: ApplicationFiled: July 19, 2022Publication date: October 26, 2023Inventors: Chih-Hsun HSU, Shiyu YUE, Wei LEI, Yi XU, Jiang LU, Yu LEI, Ziye XIONG, Tsung-Han YANG, Zhimin QI, Aixi ZHANG, Jie ZHANG, Liqi WU, Rongjun WANG, Shihchung CHEN, Meng-Shan WU, Chun-Chieh WANG, Annamalai LAKSHMANAN, Yixiong YANG, Xianmin TANG
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Publication number: 20230326744Abstract: Embodiments of the disclosure relate to methods for bottom-up metal gapfill without substantial deposition outside of the feature. Additional embodiments provide a method of forming a metal material on the top surface of the substrate and the bottom of the feature before depositing the metal gapfill.Type: ApplicationFiled: April 6, 2022Publication date: October 12, 2023Applicant: Applied Materials, Inc.Inventors: Annamalai Lakshmanan, Yixiong Yang, Srinivas Gandikota, Joung Joo Lee, Liqi Wu, Jie Zhang, Tuerxun Ailihumaer, Yogesh Sharma
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Publication number: 20230323543Abstract: Embodiments of the disclosure advantageously provide in situ selectively deposited molybdenum films having reduced resistivity and methods of reducing or eliminating lateral growth of a selectively deposited molybdenum layer. Additional embodiments provide integrated clean and deposition processes which improve the selectivity of in situ selectively deposited molybdenum films on features, such as a via. Further embodiments advantageously provide methods of improving uniformity and selectivity of bottom-up gap fill for vias with improved film properties.Type: ApplicationFiled: April 6, 2022Publication date: October 12, 2023Applicant: Applied Materials, Inc.Inventors: Tuerxun Ailihumaer, Yixiong Yang, Annamalai Lakshmanan, Srinivas Gandikota, Yogesh Sharma, Pei Hsuan Lin, Yi Xu, Zhimin Qi, Aixi Zhang, Shiyu Yue, Yu Lei
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Publication number: 20230227975Abstract: Organometallic precursors and methods of depositing high purity metal films are discussed. Some embodiments utilize a method comprising exposing a substrate surface to an organometallic precursor comprising one or more of molybdenum (Mo), tungsten (W), osmium (Os), technetium (Tc), manganese (Mn), rhenium (Re) or ruthenium (Ru), and an iodine-containing reactant comprising a species having a formula RIx, where R is one or more of a C1-C10 alkyl, C3-C10 cycloalkyl, C2-C10 alkenyl, or C2-C10 alkynyl group, I is an iodine group and x is in a range of 1 to 4 to form a carbon-less iodine-containing metal film. Some embodiments advantageously provide methods of forming metal films having low carbon content (e.g., having greater than or equal to 95% metal species on an atomic basis), without using an oxidizing agent or a reductant.Type: ApplicationFiled: December 30, 2021Publication date: July 20, 2023Applicant: Applied Materials, Inc.Inventors: Feng Q. Liu, Mark Saly, David Thompson, Annamalai Lakshmanan, Avgerinos V. Gelatos, Joung Joo Lee
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Publication number: 20230141748Abstract: Methods for DRAM device with a buried word line are described. The method includes forming a metal cap layer and a molybdenum conductor layer in a feature on a substrate. The method includes depositing the metal cap layer on the substrate by physical vapor deposition (PVD) and depositing the molybdenum conductor layer by atomic layer deposition (ALD) on the metal cap layer.Type: ApplicationFiled: January 3, 2023Publication date: May 11, 2023Applicant: Applied Materials, Inc.Inventors: Yixiong Yang, Jacqueline S. Wrench, Yong Yang, Srinivas Gandikota, Annamalai Lakshmanan, Joung Joo Lee, Feihu Wang, Seshadri Ganguli
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Patent number: 11587829Abstract: Described are methods for controlling the doping of metal nitride films such as TaN, TiN and MnN. The temperature during deposition of the metal nitride film may be controlled to provide a film density that permits a desired amount of doping. Dopants may include Ru, Cu, Co, Mn, Mo, Al, Mg, Cr, Nb, Ta, Ti and V. The metal nitride film may optionally be exposed to plasma treatment after doping.Type: GrantFiled: January 7, 2021Date of Patent: February 21, 2023Assignee: APPLIED MATERIALS, INC.Inventors: Annamalai Lakshmanan, Ben-Li Sheu, Guodan Wei, Nicole Lundy, Paul F. Ma
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Patent number: 11587936Abstract: Methods for DRAM device with a buried word line are described. The method includes forming a metal cap layer and a molybdenum conductor layer in a feature on a substrate. The method includes depositing the metal cap layer on the substrate by physical vapor deposition (PVD) and depositing the molybdenum conductor layer by atomic layer deposition (ALD) on the metal cap layer.Type: GrantFiled: June 1, 2021Date of Patent: February 21, 2023Assignee: Applied Materials, Inc.Inventors: Yixiong Yang, Jacqueline S. Wrench, Yong Yang, Srinivas Gandikota, Annamalai Lakshmanan, Joung Joo Lee, Feihu Wang, Seshadri Ganguli
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Publication number: 20220403505Abstract: Methods and apparatus for processing a substrate is provided herein. For example, a method for processing a substrate comprises depositing a silicide layer within a feature defined in a layer on a substrate, forming one of a metal liner layer or a metal seed layer atop the silicide layer within the feature via depositing at least one of molybdenum (Mo) or tungsten (W) using physical vapor deposition, and depositing Mo using at least one of chemical vapor deposition or atomic layer deposition atop the at least one of the metal liner layer or the metal seed layer, without vacuum break.Type: ApplicationFiled: June 16, 2021Publication date: December 22, 2022Inventors: Annamalai LAKSHMANAN, Jacqueline S. WRENCH, Feihu WANG, Yixiong YANG, Joung Joo LEE, Srinivas GANDIKOTA, Sang-heum KIM, Zhebo CHEN, Gang SHEN
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Publication number: 20220277961Abstract: Methods for depositing a metal contact stack on a substrate are described. The method stack includes a metal cap layer and a molybdenum conductor layer. The method includes depositing the metal cap layer on the substrate by physical vapor deposition (PVD) and depositing the molybdenum conductor layer by atomic layer deposition (ALD) on the metal cap layer.Type: ApplicationFiled: June 1, 2021Publication date: September 1, 2022Applicant: Applied Materials, Inc.Inventors: Annamalai Lakshmanan, Jacqueline S. Wrench, Feihu Wang, Yixiong Yang, Joung Joo Lee, Srinivas Gandikota
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Publication number: 20220278108Abstract: Methods for DRAM device with a buried word line are described. The method includes forming a metal cap layer and a molybdenum conductor layer in a feature on a substrate. The method includes depositing the metal cap layer on the substrate by physical vapor deposition (PVD) and depositing the molybdenum conductor layer by atomic layer deposition (ALD) on the metal cap layer.Type: ApplicationFiled: June 1, 2021Publication date: September 1, 2022Applicant: Applied Materials, IncInventors: Yixiong Yang, Jacqueline S. Wrench, Yong Yang, Srinivas Gandikota, Annamalai Lakshmanan, Joung Joo Lee, Feihu Wang, Seshadri Ganguli
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Publication number: 20210159118Abstract: Described are methods for controlling the doping of metal nitride films such as TaN, TiN and MnN. The temperature during deposition of the metal nitride film may be controlled to provide a film density that permits a desired amount of doping. Dopants may include Ru, Cu, Co, Mn, Mo, Al, Mg, Cr, Nb, Ta, Ti and V. The metal nitride film may optionally be exposed to plasma treatment after doping.Type: ApplicationFiled: January 7, 2021Publication date: May 27, 2021Applicant: Applied Materials, Inc.Inventors: Annamalai Lakshmanan, Ben-Li Sheu, Guodan Wei, Nicole Lundy, Paul F. Ma
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Patent number: 10930472Abstract: Methods and apparatus for forming a metal silicide as nanowires for back-end interconnection structures for semiconductor applications are provided. In one embodiment, the method includes forming a metal silicide layer on a substrate by a chemical vapor deposition process or a physical vapor deposition process, thermal treating the metal silicide layer in a processing chamber, applying a microwave power in the processing chamber while thermal treating the metal silicide layer; and maintaining a substrate temperature less than 400 degrees Celsius while thermal treating the metal silicide layer. In another embodiment, a method includes supplying a deposition gas mixture including at least a metal containing precursor and a reacting gas on a surface of a substrate, forming a plasma in the presence of the deposition gas mixture by exposure to microwave power, exposing the plasma to light radiation, and forming a metal silicide layer on the substrate from the deposition gas.Type: GrantFiled: January 17, 2019Date of Patent: February 23, 2021Assignee: Applied Materials, Inc.Inventors: Bencherki Mebarki, Annamalai Lakshmanan, Kaushal K. Singh, Andrew Cockburn, Ludovic Godet, Paul F. Ma, Mehul B. Naik
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Patent number: 10910263Abstract: Described are methods for controlling the doping of metal nitride films such as TaN, TiN and MnN. The temperature during deposition of the metal nitride film may be controlled to provide a film density that permits a desired amount of doping. Dopants may include Ru, Cu, Co, Mn, Mo, Al, Mg, Cr, Nb, Ta, Ti and V. The metal nitride film may optionally be exposed to plasma treatment after doping.Type: GrantFiled: August 20, 2019Date of Patent: February 2, 2021Assignee: APPLIED MATERIALS, INC.Inventors: Annamalai Lakshmanan, Ben-Li Sheu, Guodan Wei, Nicole Lundy, Paul F. Ma
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Patent number: 10784157Abstract: Described are doped TaN films, as well as methods for providing the doped TaN films. Doping TaN films with Ru, Cu, Co, Mn, Al, Mg, Cr, Nb, Ti and/or V allows for enhanced copper barrier properties of the TaN films. Also described are methods of providing films with a first layer comprising doped TaN and a second layer comprising one or more of Ru and Co, with optional doping of the second layer.Type: GrantFiled: November 30, 2012Date of Patent: September 22, 2020Assignee: Applied Materials, Inc.Inventors: Annamalai Lakshmanan, Paul F. Ma, Mei Chang, Jennifer Shan
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Patent number: 10593592Abstract: Methods and apparatus for forming a metal silicide as nanowires for back-end interconnection structures for semiconductor applications are provided. In one embodiment, the method includes forming a metal silicide stack comprising as plurality of metal silicide layers on a substrate by a chemical vapor deposition process or a physical vapor deposition process, thermal treating the metal silicide stack in a processing chamber, applying a microwave power in the processing chamber while thermal treating the metal silicide layer; and maintaining a substrate temperature less than 400 degrees Celsius while thermal treating the metal silicide layer.Type: GrantFiled: December 18, 2015Date of Patent: March 17, 2020Assignee: APPLIED MATERIALS, INC.Inventors: Bencherki Mebarki, Annamalai Lakshmanan, Kaushal K. Singh, Paul F. Ma, Mehul B. Naik, Andrew Cockburn, Ludovic Godet
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Publication number: 20190378754Abstract: Described are methods for controlling the doping of metal nitride films such as TaN, TiN and MnN. The temperature during deposition of the metal nitride film may be controlled to provide a film density that permits a desired amount of doping. Dopants may include Ru, Cu, Co, Mn, Mo, Al, Mg, Cr, Nb, Ta, Ti and V. The metal nitride film may optionally be exposed to plasma treatment after doping.Type: ApplicationFiled: August 20, 2019Publication date: December 12, 2019Inventors: Annamalai Lakshmanan, Ben-Li Sheu, Guodan Wei, Nicole Lundy, Paul F. Ma
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Patent number: 10431493Abstract: Described are methods for controlling the doping of metal nitride films such as TaN, TiN and MnN. The temperature during deposition of the metal nitride film may be controlled to provide a film density that permits a desired amount of doping. Dopants may include Ru, Cu, Co, Mn, Mo, Al, Mg, Cr, Nb, Ta, Ti and V. The metal nitride film may optionally be exposed to plasma treatment after doping.Type: GrantFiled: May 25, 2018Date of Patent: October 1, 2019Assignee: APPLIED MATERIALS, INC.Inventors: Annamalai Lakshmanan, Ben-Li Sheu, Guodan Wei, Nicole Lundy, Paul F. Ma
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Publication number: 20190172686Abstract: Methods and apparatus for forming a metal silicide as nanowires for back-end interconnection structures for semiconductor applications are provided. In one embodiment, the method includes forming a metal silicide layer on a substrate by a chemical vapor deposition process or a physical vapor deposition process, thermal treating the metal silicide layer in a processing chamber, applying a microwave power in the processing chamber while thermal treating the metal silicide layer; and maintaining a substrate temperature less than 400 degrees Celsius while thermal treating the metal silicide layer. In another embodiment, a method includes supplying a deposition gas mixture including at least a metal containing precursor and a reacting gas on a surface of a substrate, forming a plasma in the presence of the deposition gas mixture by exposure to microwave power, exposing the plasma to light radiation, and forming a metal silicide layer on the substrate from the deposition gas.Type: ApplicationFiled: January 17, 2019Publication date: June 6, 2019Inventors: Bencherki MEBARKI, Annamalai LAKSHMANAN, Kaushal K. SINGH, Andrew COCKBURN, Ludovic GODET, Paul F. MA, Mehul B. NAIK
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Patent number: 10204764Abstract: Methods and apparatus for forming a metal silicide as nanowires for back-end interconnection structures for semiconductor applications are provided. In one embodiment, the method includes forming a metal silicide layer on a substrate by a chemical vapor deposition process or a physical vapor deposition process, thermal treating the metal silicide layer in a processing chamber, applying a microwave power in the processing chamber while thermal treating the metal silicide layer; and maintaining a substrate temperature less than 400 degrees Celsius while thermal treating the metal silicide layer. In another embodiment, a method includes supplying a deposition gas mixture including at least a metal containing precursor and a reacting gas on a surface of a substrate, forming a plasma in the presence of the deposition gas mixture by exposure to microwave power, exposing the plasma to light radiation, and forming a metal silicide layer on the substrate from the deposition gas.Type: GrantFiled: October 28, 2014Date of Patent: February 12, 2019Assignee: Applied Materials, Inc.Inventors: Bencherki Mebarki, Annamalai Lakshmanan, Kaushal K. Singh, Andrew Cockburn, Ludovic Godet, Paul F. Ma, Mehul Naik