Abstract: Magnets including a coating and related methods are described herein. The coating may include an aluminum layer. The aluminum layer may be formed in an electroplating process.

Abstract: Articles including a multi-layer coating and methods for applying coatings are described herein. The article may include a substrate on which the multi-layer coating is formed. In some embodiments, the coating includes multiple metallic layers.

Abstract: Electrodeposition methods and coated articles (e.g., electrical connectors) are described herein.

Abstract: Systems and methods for manufacturing a vacuum device, such as an electron emitter, that includes a foil exit window palced over and joined to a support grid. In one particular method, the vacuum chamber of an electron emitter has a thin foil forming an exit window at one end. The thin foil may be titanium or any suitable material and the foil will typically enlarge during a bonding process that attaches the foil to the support grid. In one manufacturing process, the support grid is provided with a surface that has contours, typically being smooth recessed surfaces, that the foil once enlarged can lie against as the vacuum pulls the foil against the grid.

Abstract: Disclosed are methods and apparatus for characterizing defects by using X-ray emission analysis techniques. The X-rays are emitted in response to an impinging beam, such as an electron beam, directed towards the sample surface where a defect resides. It may also be used to help determine where the void(s) are with respect to the interconnect structure. Methods disclosed are for spatially locating defects in or on integrated circuits. Also disclosed are methods for identifying the elemental composition of defects and spatially locating different elemental components of defects.

Abstract: Disclosed are methods and apparatus for classifying defects based on X-ray spectrum obtained from the defects. In general terms, the present invention provides pattern recognition techniques for accurately and efficiently classifying a defect based on an X-ray spectrum obtained from such defect and its surrounding substrate and structures, no matter the complexity of such substrate and structures. A pattern recognition technique generally includes training a pattern recognition process to recognize particular types of X-ray spectrum obtained from specimens as belonging to a particular defect type or other specific characteristic of a specimen. Once a pattern recognition process is set up to recognize or classify particular X-ray spectrum, the pattern recognition process can then be utilized to automatically classify specimens as having a specific characteristic or defect type.

Abstract: Methods and apparatus for determining the material composition of a semiconductor device at an area of interest are described. An electron time-of-flight spectrometer is used within a semiconductor inspection system. The spectrometer is placed on the opposite side of an objective lens from the area of interest. In one embodiment, the electron time-of-flight spectrometer is an electron drift tube. A computing module produces an electron emission spectrum for the materials at the area of interest.

Abstract: Techniques for determining certain parameters of semiconductor specimens using X-ray spectroscopy are described. The invention can be used to determine parameters such as composition, dimensions, and density of semiconductor specimens. Specifically, an X-ray spectrum simulation algorithm is used to iteratively generate a theoretical X-ray spectrum for a semiconductor specimen having certain parameters. The iterative generation of theoretical X-ray spectrums continues until one of the theoretical X-ray spectrum closely matches the actual X-ray spectrum measured off of the specimen. In an alternative embodiment, this technique of generating theoretical X-ray spectrums can be used in combination with a pre-existing library of X-ray spectral signatures for semiconductor specimens having various parameters.

Abstract: Techniques for determining the composition of a specimen under inspection by measuring backscatter electron emissions and then estimating the atomic number of the specimen are described. Typically, this technique is useful for inspecting features, such as defects, upon very small specimens such as semiconductor wafers. Charged particle beams are typically required to cause backscatter electrons to emanate from a specimen. One embodiment of the present invention involves measuring the backscatter electron count or current of a reference sample for which the atomic number is known. Another embodiment involves the use of an atomic number lookup table that is organized by feature size parameters and normalized backscatter electron counts or currents.