Abstract: The present disclosure relates to a non-volatile ferroelectric memory and a method of preparing the same. The ferroelectric memory includes a ferroelectric storage layer, a first electrode and a second electrode; the first electrode and the second electrode each include a buried conductive layer formed by patterning in a surface of the ferroelectric storage layer and an electrode layer formed on the buried conductive layer; and when a write signal in a certain direction is applied between the first electrode and the second electrode, the electric domains of a part of the ferroelectric storage layer between a pair of the buried conductive layers are enabled to be reversed, so that a domain wall conductive passage that electrically connects the first electrode and the second electrode can be established.

Abstract: Disclosed is an integrated circuit for ferroelectric memory, the integrated circuit comprising: a ferroelectric memory array having a storage unit array formed on a ferroelectric single-crystal layer, wherein each ferroelectric memory unit in the ferroelectric memory array is at least formed by one storage unit in the storage unit array, or at least formed by one storage unit in the storage unit array and one transistor formed on a silicon substrate of a silicon-based reading and writing circuit that is electrically connected to the storage unit.

Abstract: Disclosed is an integrated circuit for ferroelectric memory, the integrated circuit comprising: a ferroelectric memory array having a storage unit array formed on a ferroelectric single-crystal layer, wherein each ferroelectric memory unit in the ferroelectric memory array is at least formed by one storage unit in the storage unit array, or at least formed by one storage unit in the storage unit array and one transistor formed on a silicon substrate of a silicon-based reading and writing circuit that is electrically connected to the storage unit.

Abstract: Disclosed is a three-dimensional non-volatile ferroelectric memory including a ferroelectric memory array structure, wherein the ferroelectric memory array structure includes multiple layers of ferroelectric memory cell array disposed in a stacked way, and each layer of the ferroelectric memory cell array includes ferroelectric memory cells arranged in rows and columns; wherein word lines and bit lines which are substantially orthogonal to each other are oppositely disposed on two sides of the corresponding ferroelectric memory cell respectively, and a reference ferroelectric body is disposed adjacent to the corresponding ferroelectric memory cell. A polarization direction of an electric domain in the ferroelectric memory cell is not perpendicular to an electric field direction of a write voltage signal applied to the word line and the bit line; and when the write voltage signal is applied between the word line and the bit line.

Abstract: The present disclosure relates to a non-volatile ferroelectric memory and a method of preparing the same. The ferroelectric memory includes a ferroelectric storage layer, a first electrode and a second electrode; the first electrode and the second electrode each include a buried conductive layer formed by patterning in a surface of the ferroelectric storage layer and an electrode layer formed on the buried conductive layer; and when a write signal in a certain direction is applied between the first electrode and the second electrode, the electric domains of a part of the ferroelectric storage layer between a pair of the buried conductive layers are enabled to be reversed, so that a domain wall conductive passage that electrically connects the first electrode and the second electrode can be established.

Abstract: Disclosed is a three-dimensional non-volatile ferroelectric memory including a ferroelectric memory array structure, wherein the ferroelectric memory array structure includes multiple layers of ferroelectric memory cell array disposed in a stacked way, and each layer of the ferroelectric memory cell array includes ferroelectric memory cells arranged in rows and columns; wherein word lines and bit lines which are substantially orthogonal to each other are oppositely disposed on two sides of the corresponding ferroelectric memory cell respectively, and a reference ferroelectric body is disposed adjacent to the corresponding ferroelectric memory cell. A polarization direction of an electric domain in the ferroelectric memory cell is not perpendicular to an electric field direction of a write voltage signal applied to the word line and the bit line; and when the write voltage signal is applied between the word line and the bit line.

Abstract: Disclosed is an integrated circuit for ferroelectric memory, the integrated circuit comprising: a ferroelectric memory array having a storage unit array formed on a ferroelectric single-crystal layer, wherein each ferroelectric memory unit in the ferroelectric memory array is at least formed by one storage unit in the storage unit array, or at least formed by one storage unit in the storage unit array and one transistor formed on a silicon substrate of a silicon-based reading and writing circuit that is electrically connected to the storage unit.

Abstract: Disclosed is a non-destructive large current-readout ferroelectric single-crystal thin film memory as well as a method of preparing the ferroelectric memory and a method of operating the ferroelectric memory. The large current-readout ferroelectric single-crystal thin film memory comprises a ferroelectric storage layer, which is a ferroelectric single-crystal storage layer. The non-destructive readout ferroelectric memory has a greatly increased read current in an on-state, and moreover, the data retention performance and data endurance performance are improved.

Abstract: Disclosed is a non-destructive large current-readout ferroelectric single-crystal thin film memory as well as a method of preparing the ferroelectric memory and a method of operating the ferroelectric memory. The large current-readout ferroelectric single-crystal thin film memory comprises a ferroelectric storage layer, which is a ferroelectric single-crystal storage layer. The non-destructive readout ferroelectric memory has a greatly increased read current in an on-state, and moreover, the data retention performance and data endurance performance are improved.

Abstract: A non-destructive readout ferroelectric memory as well as a method of preparing the ferroelectric memory and a method of operating the ferroelectric memory are disclosed. The ferroelectric memory comprises a ferroelectric thin film layer. The ferroelectric memory of the invention can realize a non-destructive readout by way of current, is suitable for a high density application, is simple in preparation and has a low cost.

Abstract: A non-destructive readout ferroelectric memory as well as a method of preparing the ferroelectric memory and a method of operating the ferroelectric memory are disclosed. The ferroelectric memory comprises a ferroelectric thin film layer. The ferroelectric memory of the invention can realize a non-destructive readout by way of current, is suitable for a high density application, is simple in preparation and has a low cost.

Abstract: The present invention relates to a ferroelectric analyzing device and a method for adjusting ferroelectric domain switching speed with the ferroelectric analyzing device, and pertains to the technical field of characteristic test of solid-state dielectrics. The ferroelectric analyzing device comprises a voltage pulse generator for generating square pulse signal, which is biased on a ferroelectric thin film so as to switch the polarization of ferroelectric domains, the ferroelectric analyzing device further comprises a variable resistor which is connected in series with the ferroelectric thin film. The variable resistor is used for adjusting domain switching current so as to realize adjustment of domain switching speed of ferroelectric domains. In the method, the square pulse signal is biased on the ferroelectric thin film, and an adjustment of domain switching speed of ferroelectric domains can be realized by adjusting the resistance value of the variable resistor.

Abstract: The invention provides a Ferro-RRAM, a method of operating the Ferro-RRAM, and a method of fabricating the Ferro-RRAM, and pertains to the technical field of memory. The Ferro-RRAM comprises an upper electrode, a lower electrode, and a ferroelectric semiconducting thin-film layer provided between the upper electrode and the lower electrode and serving as a storage function layer; wherein the ferroelectric semiconducting thin-film layer is operable to generate a diode conduction characteristic by ferroelectric domain reorientation, and is operable to modulate the diode conduction characteristic by variation of the ferroelectric domain orientation; the Ferro-RRAM stores information according to variation of modulation of the diode conduction characteristic. The Ferro-RRAM has such characteristics of being simple in structure and fabrication, non-destructive readout and nonvolatile storage.

Abstract: The present invention relates to a ferroelectric analyzing device and a method for adjusting ferroelectric domain switching speed with the ferroelectric analyzing device, and pertains to the technical field of characteristic test of solid-state dielectrics. The ferroelectric analyzing device comprises a voltage pulse generator for generating square pulse signal, which is biased on a ferroelectric thin film so as to switch the polarization of ferroelectric domains, the ferroelectric analyzing device further comprises a variable resistor which is connected in series with the ferroelectric thin film. The variable resistor is used for adjusting domain switching current so as to realize adjustment of domain switching speed of ferroelectric domains. In the method, the square pulse signal is biased on the ferroelectric thin film, and an adjustment of domain switching speed of ferroelectric domains can be realized by adjusting the resistance value of the variable resistor.

Abstract: The invention provides a Ferro-RRAM, a method of operating the Ferro-RRAM, and a method of fabricating the Ferro-RRAM, and pertains to the technical field of memory. The Ferro-RRAM comprises an upper electrode, a lower electrode, and a ferroelectric semiconducting thin-film layer provided between the upper electrode and the lower electrode and serving as a storage function layer; wherein the ferroelectric semiconducting thin-film layer is operable to generate a diode conduction characteristic by ferroelectric domain reorientation, and is operable to modulate the diode conduction characteristic by variation of the ferroelectric domain orientation; the Ferro-RRAM stores information according to variation of modulation of the diode conduction characteristic. The Ferro-RRAM has such characteristics of being simple in structure and fabrication, non-destructive readout and nonvolatile storage.

Abstract: Disclosed is a non-destructive large current-readout ferroelectric single-crystal thin film memory as well as a method of preparing the ferroelectric memory and a method of operating the ferroelectric memory. The large current-readout ferroelectric single-crystal thin film memory comprises a ferroelectric storage layer, which is a ferroelectric single-crystal storage layer. The non-destructive readout ferroelectric memory has a greatly increased read current in an on-state, and moreover, the data retention performance and data endurance performance are improved.