Patents by Inventor Anshul VYAS

Anshul VYAS has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Pre-clean of silicon germanium for pre-metal contact at source and drain and pre-high K at channel
    Patent number: 10615034
    Abstract: The present disclosure generally relates to methods for removing contaminants and native oxides from substrate surfaces. The method includes exposing a surface of the substrate to first hydrogen radical species, wherein the substrate is silicon germanium having a concentration of germanium above about 30%, then exposing the surface of the substrate to a plasma formed from a fluorine-containing precursor and a hydrogen-containing precursor, and then exposing the surface of the substrate to second hydrogen radical species.
    Type: Grant
    Filed: December 26, 2018
    Date of Patent: April 7, 2020
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Bo Zheng, Avgerinos V. Gelatos, Anshul Vyas, Raymond Hoiman Hung
  • PRE-CLEAN OF SILICON GERMANIUM FOR PRE-METAL CONTACT AT SOURCE AND DRAIN AND PRE-HIGH K AT CHANNEL
    Publication number: 20190326115
    Abstract: The present disclosure generally relates to methods for removing contaminants and native oxides from substrate surfaces. The method includes exposing a surface of the substrate to first hydrogen radical species, wherein the substrate is silicon germanium having a concentration of germanium above about 30%, then exposing the surface of the substrate to a plasma formed from a fluorine-containing precursor and a hydrogen-containing precursor, and then exposing the surface of the substrate to second hydrogen radical species.
    Type: Application
    Filed: December 26, 2018
    Publication date: October 24, 2019
    Inventors: Bo Zheng, Avgerinos V. Gelatos, Anshul Vyas, Raymond Hoiman Hung
  • Pre-clean of silicon germanium for pre-metal contact at source and drain and pre-high k at channel
    Patent number: 10163630
    Abstract: The present disclosure generally relates to methods for removing contaminants and native oxides from substrate surfaces. The method includes exposing a surface of the substrate to first hydrogen radical species, wherein the substrate is silicon germanium having a concentration of germanium above about 30%, then exposing the surface of the substrate to a plasma formed from a fluorine-containing precursor and a hydrogen-containing precursor, and then exposing the surface of the substrate to second hydrogen radical species.
    Type: Grant
    Filed: August 11, 2017
    Date of Patent: December 25, 2018
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Bo Zheng, Avgerinos V. Gelatos, Anshul Vyas, Raymond Hoiman Hung
  • PRE-CLEAN OF SILICON GERMANIUM FOR PRE-METAL CONTACT AT SOURCE AND DRAIN AND PRE-HIGH K AT CHANNEL
    Publication number: 20170365468
    Abstract: The present disclosure generally relates to methods for removing contaminants and native oxides from substrate surfaces. The method includes exposing a surface of the substrate to first hydrogen radical species, wherein the substrate is silicon germanium having a concentration of germanium above about 30%, then exposing the surface of the substrate to a plasma formed from a fluorine-containing precursor and a hydrogen-containing precursor, and then exposing the surface of the substrate to second hydrogen radical species.
    Type: Application
    Filed: August 11, 2017
    Publication date: December 21, 2017
    Inventors: Bo ZHENG, Avgerinos V. GELATOS, Anshul VYAS, Raymond Hoiman HUNG
  • Pre-clean of silicon germanium for pre-metal contact at source and drain and pre-high K at channel
    Patent number: 9735009
    Abstract: The present disclosure generally relates to methods for removing contaminants and native oxides from substrate surfaces. The method includes exposing a surface of the substrate to first hydrogen radical species, wherein the substrate is silicon germanium having a concentration of germanium above about 30%, then exposing the surface of the substrate to a plasma formed from a fluorine-containing precursor and a hydrogen-containing precursor, and then exposing the surface of the substrate to second hydrogen radical species.
    Type: Grant
    Filed: September 4, 2015
    Date of Patent: August 15, 2017
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Bo Zheng, Avgerinos V. Gelatos, Anshul Vyas, Raymond Hoiman Hung
  • PRE-CLEAN OF SILICON GERMANIUM FOR PRE-METAL CONTACT AT SOURCE AND DRAIN AND PRE-HIGH K AT CHANNEL
    Publication number: 20160079062
    Abstract: The present disclosure generally relates to methods for removing contaminants and native oxides from substrate surfaces. The method includes exposing a surface of the substrate to first hydrogen radical species, wherein the substrate is silicon germanium having a concentration of germanium above about 30%, then exposing the surface of the substrate to a plasma formed from a fluorine-containing precursor and a hydrogen-containing precursor, and then exposing the surface of the substrate to second hydrogen radical species.
    Type: Application
    Filed: September 4, 2015
    Publication date: March 17, 2016
    Inventors: Bo ZHENG, Avgerinos V. GELATOS, Anshul VYAS, Raymond Hoiman HUNG