Patents by Inventor Anthony Buonassisi

Anthony Buonassisi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • OPTOELECTRIC DEVICES FABRICATED WITH DEFECT TOLERANT SEMICONDUCTORS
    Publication number: 20160293858
    Abstract: Using fundamental electronic structure properties as an indicative of defect tolerance, a broad class of semiconductors containing partially oxidized cations can be identified, as well as several specific instances that can share these properties. These defect tolerant semiconductors can make a high-performance optoelectric device, for example, photovoltaic cells.
    Type: Application
    Filed: April 1, 2016
    Publication date: October 6, 2016
    Applicants: Massachusetts Institute of Technology, National Renewable Energy Laboratory
    Inventors: Riley Eric Brandt, Rachel Chava Kurchin, Anthony Buonassisi, Vladan Stevanovic, David Ginley
  • Phonon-enhanced crystal growth and lattice healing
    Patent number: 8450704
    Abstract: A system for modifying dislocation distributions in semiconductor materials is provided. The system includes one or more vibrational sources for producing at least one excitation of vibrational mode having phonon frequencies so as to enhance dislocation motion through a crystal lattice.
    Type: Grant
    Filed: December 3, 2010
    Date of Patent: May 28, 2013
    Assignee: Massachusetts Institute of Technology
    Inventors: Anthony Buonassisi, Mariana Bertoni, Bonna Newman
  • Method to reduce dislocation density in silicon using stress
    Patent number: 8389999
    Abstract: A crystalline material structure with reduced dislocation density and method of producing same is provided. The crystalline material structure is annealed at temperatures above the brittle-to-ductile transition temperature of the crystalline material structure. One or more stress elements are formed on the crystalline material structure so as to annihilate dislocations or to move them into less harmful locations.
    Type: Grant
    Filed: September 28, 2010
    Date of Patent: March 5, 2013
    Assignee: Massachusetts Institute of Technology
    Inventors: Anthony Buonassisi, Mariana Bertoni, Ali Argon, Sergio Castellanos, Alexandria Fecych, Douglas Powell, Michelle Vogl
  • PHONON-ENHANCED CRYSTAL GROWTH AND LATTICE HEALING
    Publication number: 20110136348
    Abstract: A system for modifying dislocation distributions in semiconductor materials is provided. The system includes one or more vibrational sources for producing at least one excitation of vibrational mode having phonon frequencies so as to enhance dislocation motion through a crystal lattice.
    Type: Application
    Filed: December 3, 2010
    Publication date: June 9, 2011
    Applicant: MASSACHUSETTS INSTITUTE OF TECHNOLOGY
    Inventors: Anthony Buonassisi, Mariana Bertoni, Bonna Newman
  • METHOD TO REDUCE DISLOCATION DENSITY IN SILICON USING STRESS
    Publication number: 20110073869
    Abstract: A crystalline material structure with reduced dislocation density and method of producing same is provided. The crystalline material structure is annealed at temperatures above the brittle-to-ductile transition temperature of the crystalline material structure. One or more stress elements are formed on the crystalline material structure so as to annihilate dislocations or to move them into less harmful locations.
    Type: Application
    Filed: September 28, 2010
    Publication date: March 31, 2011
    Applicant: MASSACHUSETTS INSTITUTE OF TECHNOLOGY
    Inventors: Anthony Buonassisi, Mariana Bertoni, Ali Argon, Sergio Castellanos, Alexandria Fecych, Douglas Powell, Michelle Vogl
  • Internal gettering by metal alloy clusters
    Publication number: 20100213406
    Abstract: The present invention relates to the internal gettering of impurities in semiconductors by metal alloy clusters. In particular, intermetallic clusters are formed within silicon, such clusters containing two or more transition metal species. Such clusters have melting temperatures below that of the host material and are shown to be particularly effective in gettering impurities within the silicon and collecting them into isolated, less harmful locations. Novel compositions for some of the metal alloy clusters are also described.
    Type: Application
    Filed: April 14, 2010
    Publication date: August 26, 2010
    Applicant: The Regents of the University of California
    Inventors: Anthony Buonassisi, Matthias Heuer, Andrei A. Istratov, Matthew D. Pickett, Matthew A. Marcus, Eicke R. Weber
  • Internal gettering by metal alloy clusters
    Patent number: 7763095
    Abstract: The present invention relates to the internal gettering of impurities in semiconductors by metal alloy clusters. In particular, intermetallic clusters are formed within silicon, such clusters containing two or more transition metal species. Such clusters have melting temperatures below that of the host material and are shown to be particularly effective in gettering impurities within the silicon and collecting them into isolated, less harmful locations. Novel compositions for some of the metal alloy clusters are also described.
    Type: Grant
    Filed: June 5, 2006
    Date of Patent: July 27, 2010
    Assignee: The Regents of the University of California
    Inventors: Anthony Buonassisi, Matthias Heuer, Andrei A. Istratov, Matthew D. Pickett, Mathew A. Marcus, Eicke R. Weber
  • Internal gettering by metal alloy clusters
    Publication number: 20060289091
    Abstract: The present invention relates to the internal gettering of impurities in semiconductors by metal alloy clusters. In particular, intermetallic clusters are formed within silicon, such clusters containing two or more transition metal species. Such clusters have melting temperatures below that of the host material and are shown to be particularly effective in gettering impurities within the silicon and collecting them into isolated, less harmful locations. Novel compositions for some of the metal alloy clusters are also described.
    Type: Application
    Filed: June 5, 2006
    Publication date: December 28, 2006
    Inventors: Anthony Buonassisi, Matthias Heuer, Andrei Istratov, Matthew Pickett, Mathew Marcus, Eicke Weber