Patents by Inventor Anthony de la Llera
Anthony de la Llera has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230282455Abstract: A substrate processing apparatus includes a vacuum chamber with a processing zone for processing a substrate using plasma and at least one magnetic field source configured to generate one or more active magnetic fields through the processing zone. The apparatus also includes a magnetic field sensor configured to detect a signal representing the one or more active magnetic fields, and a controller coupled to the magnetic field sensor, and the at least one magnetic field source. The controller is configured to detect a target value corresponding to at least one characteristic of the one or more active magnetic fields, set an initial current through the at least one magnetic field source, the initial current corresponding to the target value; and adjust a subsequent current through the at least one magnetic field source based on the detected signal representing the one or more active magnetic fields.Type: ApplicationFiled: May 17, 2022Publication date: September 7, 2023Inventors: Alecia Chantalle Griffin, Anthony de la Llera, Peter Bradley Phillips, Bing Ji
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Publication number: 20230260768Abstract: Methods, systems, apparatuses, and computer programs are presented for controlling plasma discharge uniformity using magnetic fields. A substrate processing apparatus includes a vacuum chamber with a processing zone for processing a substrate. The apparatus further includes a magnetic field sensor to detect a first signal representing an axial magnetic field and a second signal representing a radial magnetic field associated with the vacuum chamber. The apparatus includes at least two magnetic field sources to generate an axial supplemental magnetic field and a radial supplemental magnetic field through the processing zone of the vacuum chamber. The apparatus includes a magnetic field controller coupled to the magnetic field sensor and the at least two magnetic field sources. The magnetic field controller adjusts at least one characteristic of one or more of the axial supplemental magnetic field and the radial supplemental magnetic field based on the first signal and the second signal.Type: ApplicationFiled: August 30, 2021Publication date: August 17, 2023Inventors: Theodoros Panagopoulos, Alexei M. Marakhtanov, Bing Ji, Anthony de la Llera, John P. Holland, Dong Woo Paeng
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Publication number: 20230243034Abstract: Showerhead faceplates for semiconductor processing chambers are provided that include one or more sets of gas distribution passages therethrough that extend at least partially along axes that are at an oblique angle to the showerhead faceplate center axis. Such angled gas distribution passages may be used to tailor the gas flow characteristics of such showerhead faceplates to produce various desired gas flow behaviors in the gas that is delivered to the wafer via such showerhead faceplates.Type: ApplicationFiled: June 14, 2021Publication date: August 3, 2023Inventors: Pratik Mankidy, John Holland, Anthony de la Llera, Rajesh Dorai
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Publication number: 20230063007Abstract: A plasma lining structure is used in a process chamber to block direct line-of-sight for plasma generated within to grounded surface. The plasma lining structure includes a plurality of sections to cover at least one or more portions of an inside surface of a plasma confinement structure disposed in the process chamber. The sections of the plasma lining structure are positioned between a plasma region and the sidewall of the plasma confinement structure, when the plasma lining structure and the plasma confinement structure are disposed in the plasma chamber, such that the sections directly face the plasma region.Type: ApplicationFiled: February 2, 2021Publication date: March 2, 2023Inventors: John Holland, Stephan K. Piotrowski, Jaewon Kim, Pratik Mankidy, Takumi Yanagawa, Dongjun Wu, Anthony De La Llera, Zehua Jin
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Patent number: 11594400Abstract: A plasma processing system includes a plasma chamber having a substrate support, and a multi-zone gas injection upper electrode disposed opposite the substrate support. An inner plasma region is defined between the upper electrode and the substrate support. The multi-zone gas injection upper electrode has a plurality of concentric gas injection zones. A confinement structure, which surrounds the inner plasma region, has an upper horizontal wall that interfaces with the outer electrode of the upper electrode. The confinement structure has a lower horizontal wall that interfaces with the substrate support, and includes a perforated confinement ring and a vertical wall that extends from the upper horizontal wall to the lower horizontal wall. The lower surface of the upper horizontal wall, an inner surface of the vertical wall, and an upper surface of the lower horizontal wall define a boundary of an outer plasma region, which surrounds the inner plasma region.Type: GrantFiled: April 10, 2020Date of Patent: February 28, 2023Assignee: Lam Research CorporationInventors: Ryan Bise, Rajinder Dhindsa, Alexei Marakhtanov, Lumin Li, Sang Ki Nam, Jim Rogers, Eric Hudson, Gerardo Delgadino, Andrew D. Bailey, III, Mike Kellogg, Anthony de la Llera, Darrell Ehrlich
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Publication number: 20230057217Abstract: Gas distribution faceplates are disclosed that feature clusters of gas passages extending from inlet gas ports on a first side thereof to outlet gas ports on a second side thereof. The gas passages may each have at least a portion thereof that is at an oblique angle with respect to a nominal centerline of the gas distribution faceplate, thereby allowing the inlet gas ports for a given cluster of gas passages to be tightly grouped together and the outlet gas ports for that cluster of gas passages to be more widely spaced apart. This allows for a large numbers of gas passages to be used, thereby allowing for a reduction of flow rate through each gas passage and an attendant decrease in gas passage erosion rate, while reducing or eliminating the effects of overlapping wear zones around each outlet gas port.Type: ApplicationFiled: January 28, 2021Publication date: February 23, 2023Inventors: Henry Stephen Povolny, Andrew D. Bailey, III, Anthony de la Llera, Nebiyu Barsula Sermollo, Shawn Tokairin
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Publication number: 20220005675Abstract: In some examples, a substrate processing system comprises a processing chamber, a dual-phase cooling system, and a back-pressure regulator which regulates the pressure of the dual-phase coolant. The dual-phase cooling system regulates the temperature of the processing chamber or a first component thereof. The dual-phase cooling system includes a cooling loop in thermal communication with the processing chamber or the component. The cooling loop contains a dual-phase coolant in fluid communication with a heat exchanger. The processing chamber or the first component includes a top plate or a cool plate comprising one or more e passageways forming part of the cooling loop.Type: ApplicationFiled: November 19, 2019Publication date: January 6, 2022Inventors: Anthony de la Llera, Adam Mace
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Publication number: 20200243307Abstract: A plasma processing system includes a plasma chamber having a substrate support, and a multi-zone gas injection upper electrode disposed opposite the substrate support. An inner plasma region is defined between the upper electrode and the substrate support. The multi-zone gas injection upper electrode has a plurality of concentric gas injection zones. A confinement structure, which surrounds the inner plasma region, has an upper horizontal wall that interfaces with the outer electrode of the upper electrode. The confinement structure has a lower horizontal wall that interfaces with the substrate support, and includes a perforated confinement ring and a vertical wall that extends from the upper horizontal wall to the lower horizontal wall. The lower surface of the upper horizontal wall, an inner surface of the vertical wall, and an upper surface of the lower horizontal wall define a boundary of an outer plasma region, which surrounds the inner plasma region.Type: ApplicationFiled: April 10, 2020Publication date: July 30, 2020Inventors: Ryan Bise, Rajinder Dhindsa, Alexei Marakhtanov, Lumin Li, Sang Ki Nam, Jim Rogers, Eric Hudson, Gerardo Delgadino, Andrew D. Bailey, III, Mike Kellogg, Anthony de la Llera, Darrell Ehrlich
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Patent number: 10262834Abstract: A thermally and electrically conductive gasket of a gasket set configured to be mounted between a faceplate and backing plate of a showerhead electrode assembly includes an inner gasket configured to be mounted on an inner electrode of a showerhead electrode assembly. The inner gasket includes a plurality of concentric flat rings connected by a plurality of spokes. A first annular gasket surrounds and is concentric with the inner gasket and includes a flat annular ring having a plurality of cutouts. A second annular gasket surrounds and is concentric with the first annular gasket and includes a flat annular ring having a plurality of cutouts. A third annular gasket surrounds and is concentric with the second annular gasket and includes a flat annular ring having a plurality of cutouts. The gasket accommodates gas injection holes, alignment pin holes, an alignment ring groove, and/or threaded holes.Type: GrantFiled: December 9, 2015Date of Patent: April 16, 2019Assignee: LAM RESEARCH CORPORATIONInventors: Anthony de la Llera, Pratik Mankidy
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Publication number: 20160086776Abstract: An inner electrode of a showerhead electrode assembly useful for plasma etching includes features providing improved positioning accuracy and reduced warping, which leads to enhanced uniformity of plasma processing rate. The assembly can include a thermal gasket set and fasteners such as bolts or cam locks located on a radius of ¼ to ½ the radius of the inner electrode. A method of assembling the inner electrode and gasket set to a supporting member is also provided.Type: ApplicationFiled: December 9, 2015Publication date: March 24, 2016Applicant: Lam Research CorporationInventors: Anthony de la Llera, Pratik Mankidy
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Patent number: 9263240Abstract: A system and method of plasma processing includes a plasma chamber including a substrate support and an upper electrode opposite the substrate support, the upper electrode having a plurality of concentric temperature control zones and a controller coupled to the plasma chamber.Type: GrantFiled: March 15, 2012Date of Patent: February 16, 2016Assignee: Lam Research CorporationInventors: Alexei Marakhtanov, Rajinder Dhindsa, Ryan Bise, Lumin Li, Sang Ki Nam, Jim Rogers, Eric Hudson, Gerardo Delgadino, Andrew D. Bailey, III, Mike Kellogg, Anthony de la Llera
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Patent number: 9245716Abstract: An inner electrode of a showerhead electrode assembly useful for plasma etching includes features providing improved positioning accuracy and reduced warping, which leads to enhanced uniformity of plasma processing rate. The assembly can include a thermal gasket set and fasteners such as bolts or cam locks located on a radius of ¼ to ½ the radius of the inner electrode. A method of assembling the inner electrode and gasket set to a supporting member is also provided.Type: GrantFiled: October 13, 2010Date of Patent: January 26, 2016Assignee: LAM RESEARCH CORPORATIONInventors: Anthony de la Llera, Pratik Mankidy
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Patent number: 9111731Abstract: A gas feed insert configured to be disposed in a passage through an electrode assembly comprising a first insert end having therein a first bore aligned parallel with a linear axis of the gas feed insert. The gas feed insert further includes a second insert end opposite the first insert end, the second insert end having therein a second bore aligned parallel with the linear axis of the gas feed insert and a bore-to-bore communication channel in gas flow communication with the first bore and the second bore. The bore-to-bore communication channel is formed in an outer surface of the gas feed insert so as to prevent a line-of-sight when a gas flows from the first insert end through the bore-to-bore communication to the second insert end.Type: GrantFiled: September 14, 2012Date of Patent: August 18, 2015Assignee: Lam Research CorporationInventors: Anthony de la Llera, Michael C. Kellogg, Alexei Marakhtanov, Rajinder Dhindsa
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Patent number: 9093483Abstract: A showerhead electrode assembly for a plasma processing apparatus is provided. The showerhead electrode assembly includes a first member attached to a second member. The first and second members have first and second gas passages in fluid communication. When a process gas is flowed through the gas passages, a total pressure drop is generated across the first and second gas passages. A fraction of the total pressure drop across the second gas passages is greater than a fraction of the total pressure drop across the first gas passages.Type: GrantFiled: March 5, 2014Date of Patent: July 28, 2015Assignee: Lam Research CorporationInventors: Jason Augustino, Anthony de la Llera, Allan K. Ronne, Jaehyun Kim, Rajinder Dhindsa, Yen-Kun Wang, Saurabh J. Ullal, Anthony J. Norell, Keith Comendant, William M. Denty, Jr.
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Patent number: 9076826Abstract: A plasma confinement ring assembly with a single movable lower ring can be used for controlling wafer area pressure in a capacitively coupled plasma reaction chamber wherein a wafer is supported on a lower electrode assembly and process gas is introduced into the chamber by an upper showerhead electrode assembly. The assembly includes an upper ring, the lower ring, hangers, hanger caps, spacer sleeves and washers. The lower ring is supported by the hangers and is movable towards the upper ring when the washers come into contact with the lower electrode assembly during adjustment of the gap between the upper and lower electrodes. The hanger caps engage upper ends of the hangers and fit in upper portions of hanger bores in the upper ring. The spacer sleeves surround lower sections of the hangers and fit within lower portions of the hanger bores. The washers fit between enlarged heads of the hangers and a lower surface of the lower ring.Type: GrantFiled: February 4, 2011Date of Patent: July 7, 2015Assignee: Lam Research CorporationInventors: Anthony de la Llera, David Carman, Travis R. Taylor, Saurabh J. Ullal, Harmeet Singh
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Patent number: 8847495Abstract: A plasma processing systems having at least one plasma processing chamber, comprising a movable grounding component, an RF contact component configured to receive RF energy from an RF source when the RF source provides the RF energy to the RF contact component, and a ground contact component coupled to ground. The plasma processing system further includes an actuator operatively coupled to the movable grounding component for disposing the movable grounding component in a first position and a second position. The first position represents a position whereby the movable grounding component is not in contact with at least one of the RF contact component and the ground contact component. The second position represents a position whereby the movable grounding component is in contact with both the RF contact component and the ground contact component.Type: GrantFiled: September 14, 2012Date of Patent: September 30, 2014Assignee: Lam Research CorporationInventors: Anthony de la Llera, Michael C. Kellogg, Alexei Marakhtanov, Rajinder Dhindsa
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Publication number: 20140187049Abstract: A showerhead electrode assembly for a plasma processing apparatus is provided. The showerhead electrode assembly includes a first member attached to a second member. The first and second members have first and second gas passages in fluid communication. When a process gas is flowed through the gas passages, a total pressure drop is generated across the first and second gas passages. A fraction of the total pressure drop across the second gas passages is greater than a fraction of the total pressure drop across the first gas passages.Type: ApplicationFiled: March 5, 2014Publication date: July 3, 2014Applicant: Lam Research CorporationInventors: Jason Augustino, Anthony de la Llera, Allan K. Ronne, Jaehyun Kim, Rajinder Dhindsa, Yen-Kun Wang, Saurabh J. Ullal, Anthony J. Norell, Keith Comendant, William M. Denty, JR.
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Patent number: 8709202Abstract: Components of a plasma processing apparatus includes a backing member with gas passages attached to an upper electrode with gas passages. To compensate for the differences in coefficient of thermal expansion between the metallic backing member and upper electrode, the gas passages are positioned and sized such that they are misaligned at ambient temperature and substantially concentric at an elevated processing temperature. Non-uniform shear stresses can be generated in the elastomeric bonding material, due to the thermal expansion. Shear stresses can either be accommodated by applying an elastomeric bonding material of varying thickness or using a backing member comprising of multiple pieces.Type: GrantFiled: December 14, 2010Date of Patent: April 29, 2014Assignee: Lam Research CorporationInventors: Anthony De La Llera, Allan K. Ronne, Jaehyun Kim, Jason Augustino, Rajinder Dhindsa, Yen-Kun Wang, Saurabh J. Ullal, Anthony J. Norell, Keith Comendant, William M. Denty, Jr.
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Patent number: 8702866Abstract: A showerhead electrode assembly for a plasma processing apparatus is provided. The showerhead electrode assembly includes a first member attached to a second member. The first and second members have first and second gas passages in fluid communication. When a process gas is flowed through the gas passages, a total pressure drop is generated across the first and second gas passages. A fraction of the total pressure drop across the second gas passages is greater than a fraction of the total pressure drop across the first gas passages.Type: GrantFiled: December 18, 2006Date of Patent: April 22, 2014Assignee: Lam Research CorporationInventors: Jason Augustino, Anthony De La Llera, Allan K. Ronne, Jaehyun Kim, Rajinder Dhindsa, Yen-Kun Wang, Saurabh J. Ullal, Anthony J. Norell, Keith Comendant, William M. Denty, Jr.
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Patent number: 8628268Abstract: A cam lock clamp comprises a stud having a substantially cylindrical body with a first end including a head area and a second end arranged to support one or more disc springs concentrically about the stud. A socket is arranged to mechanically couple concentrically around the stud with the head area of the stud being exposed above an uppermost portion of the socket. The socket is configured to be firmly attached to a consumable material. A camshaft has a substantially cylindrical body and is configured to mount within a bore of a backing plate. The camshaft further comprises an eccentric cutout area located in a central portion of the camshaft body. The camshaft is configured to engage and lock the head area of the stud when the consumable material and the backing plate are proximate to one another.Type: GrantFiled: March 13, 2009Date of Patent: January 14, 2014Assignee: Lam Research CorporationInventors: Michael C. Kellogg, Anthony J. Norell, Anthony de la Llera, Rajinder Dhindsa