Abstract: A method is provided for manufacturing, the method including processing a workpiece in a processing step, measuring a parameter characteristic of the processing performed on the workpiece in the processing step, and forming an output signal corresponding to the characteristic parameter measured. The method also includes setting a target value for the processing performed in the processing step based on the output signal.

Abstract: A method and an apparatus for organizing production data is provided. The method comprises performing at least one process run of semiconductor devices, and recording at least one manufacturing tag associated with the process run of semiconductor devices. The method further comprises performing metrology upon at least one process run of the semiconductor device for acquiring metrology data and for performing a metrology data stackification process upon the metrology data using the manufacturing tag for organizing and stacking the metrology data. The method further comprises modifying at least one control parameter is modified based upon the stacked metrology data.

Abstract: A method for initializing process controllers based on tool event data includes providing a tool having a process controller adapted to employ a control model to control an operating recipe of the tool; receiving a tool event notification; and initializing the control model in response to receiving the tool event notification. A manufacturing system includes a tool and a process controller. The tool is adapted to process wafers in accordance with an operating recipe. The process controller is adapted to employ a control model to control the operating recipe in accordance with a control algorithm. The process controller is further adapted to receive a tool event notification and initialize the control model in response to receiving the tool event notification.

Abstract: A method for controlling a manufacturing process includes processing a plurality of workpieces in a tool; monitoring a rework rate associated with the workpieces processed in the tool; and initiating an automatic corrective action in response to the rework rate being greater than a predetermined threshold. A manufacturing system includes a tool adapted to process a plurality of workpieces and a rework controller adapted to monitor a rework rate associated with the workpieces processed in the tool and initiate an automatic corrective action in response to the rework rate being greater than a predetermined threshold.

Abstract: A method for controlling a tool adapted to process workpieces in accordance with an operating recipe based on a process target value is provided. The method includes collecting manufacturing characteristic data associated with the workpieces; correlating the manufacturing characteristic data with a first manufacturing metric to generate a first manufacturing metric distribution for the workpieces; and adjusting the process target value based on the first manufacturing metric distribution. A manufacturing system includes a processing tool and a target monitor. The processing tool is adapted to process workpieces in accordance with an operating recipe based on a process target value.

Abstract: A method for distinguishing between sources of process variation includes processing a plurality of manufactured items in a process flow; storing a set of production environment data associated with each of the manufactured items; identifying manufactured items associated with a process drift; generating a plurality of characteristic threads based on the production environment data; comparing the characteristic threads for at least those manufactured items associated with the process drift; and determining at least one potential cause for the process drift based on the comparison of the characteristic threads. A manufacturing system for distinguishing between sources of process variation is also provided. The manufacturing system includes a plurality of tools for processing manufactured items in a process flow, a database server, and a drift monitor.

Abstract: A method for planarizing the surface of a semiconductor wafer or device during manufacture. Dependencies of polish rate and substrate thickness on process parameters of downforce and polish speed, and on the characteristic product high feature area on the wafer, are explicitly defined and used to control Chemical-Mechanical Polish in Run-to-Run and real-time semiconductor production control applications.

Abstract: A method for planarizing the surface of a semiconductor wafer or device during manufacture. Dependencies of polish rate and substrate thickness on process parameters of downforce and polish speed, and on the characteristic product high feature area on the wafer, are explicitly defined and used to control Chemical-Mechanical Polish in Run-to-Run and real-time semiconductor production control applications.

Abstract: The present invention provides for a method and an apparatus for implementing a control simulation environment into a manufacturing environment. A process task is defined. A process simulation function is performed to produce simulation data corresponding to the process task. The simulation data is integrated with a process control environment for controlling a manufacturing process of a semiconductor device.

Abstract: A method for controlling a manufacturing system includes processing workpieces in a plurality of tools; initiating a baseline control script for a selected tool of the plurality of tools; providing context information for the baseline control script; determining a tool type based on the context information; selecting a group of control routines for the selected tool based on the tool type; determining required control routines from the group of control routines based on the context information; and executing the required control routines to generate control actions for the selected tool. A manufacturing system includes a plurality of tools adapted to process workpieces, a control execution manager, and a control executor. The control execution manager is adapted to initiate a baseline control script for a selected tool of the plurality of tools and provide context information for the baseline control script.

Abstract: A method for adaptively scheduling tool maintenance includes controlling an operating recipe of a tool using a plurality of control actions, monitoring the control actions to identify a degraded tool condition, and automatically initiating a tool maintenance recommendation in response to identifying the degraded tool condition. A manufacturing system includes a tool, a process controller, and a tool health monitor. The tool is adapted to process a workpiece in accordance with an operating recipe. The process controller is adapted to control the operating recipe of the tool using a plurality of control actions. The tool health monitor is adapted to monitor the control actions to identify a degraded tool condition and automatically initiate a tool maintenance recommendation in response to identifying the degraded tool condition.

Abstract: A novel method and system for fabricating integrated circuit devices is disclosed herein. In one embodiment, the method comprises determining at least one electrical performance characteristic of a plurality of semiconductor devices formed above at least one semiconducting substrate, providing the determined electrical performance characteristics to a controller that determines, based upon the determined electrical characteristics, across-substrate variations in an exposure dose of a stepper exposure process to be performed on at least one subsequently processed substrate, and performing the stepper exposure process comprised of the across-substrate variations in exposure dose on the subsequently processed substrates.

Abstract: The present invention is directed to a method of controlling chemical mechanical polishing operations to control the duration of an endpoint polishing process. The method comprises providing a wafer having a layer of copper formed thereabove, performing a first timed polishing operation for a duration (t1) on the layer of copper at a first platen to remove a majority of the layer of copper, performing an endpoint polishing operation on the layer of copper at a second platen to remove substantially all of the layer of copper, determining a duration (t2ept) of the endpoint polishing operation performed on the layer of copper at the second platen, and determining, based upon a comparison between the determined duration (t2ept) of the endpoint polishing operation and a target value for the duration of the endpoint polishing operations, a duration (t1) of the timed polishing operation to be performed on a subsequently processed layer of copper at the first platen.

Abstract: A method is provided, the method comprising processing a workpiece, having a photolithography overlay target structure disposed thereon, using a chemical-mechanical planarization (CMP) tool and measuring a photolithography overlay parameter using the photolithography overlay target structure. The method also comprises forming an output signal corresponding to the photolithography overlay parameter measured and to the chemical-mechanical planarization (CMP) tool used and using the output signal to improve at least one of accuracy in photolithography overlay metrology and fault detection in chemical-mechanical planarization (CMP).

Abstract: A method for processing an interrupted workpiece includes providing a dynamic control model defining the processing characteristics of a processing tool throughout a processing run; providing a partially processed workpiece; determining an extent of processing metric for the partially processed workpiece; and determining at least one operating recipe parameter of the processing tool based on the dynamic control model and the extent of processing metric. A manufacturing system includes a processing tool and a process controller. The processing tool is adapted to process a partially processed workpiece in accordance with an operating recipe. The process controller is adapted to determine an extent of processing metric for the partially processed workpiece and determine at least one parameter of the operating recipe based on a dynamic control model defining the processing characteristics of the processing tool throughout a processing run and the extent of processing metric.

Abstract: A processing system includes a sensor, a processing tool, and an automatic process controller. The sensor has a plurality of sensing regions. The processing tool is adapted to process at least one process layer on a wafer. The process tool includes a process control device controllable by a process control variable. The sensor is adapted to measure a process layer characteristic of the process layer in a selected one of the sensing regions. The automatic process controller is adapted to receive the process layer characteristics measured by the sensor and adjust the process control variable in response to the process layer characteristic measured in one sensing region differing from the process layer characteristic measured in another sensing region.

Abstract: A method for prioritizing production flow includes processing a plurality of manufactured items in a process flow; measuring characteristics of a plurality of manufactured items in the process flow; estimating performance grades for the plurality of manufactured items based on the measured characteristics; grouping the manufactured items with like estimated performance grades; assigning priorities to groups of manufactured items with like estimated performance grades; and directing the plurality of manufactured items through the process flow based on the assigned priorities. A manufacturing system includes a plurality of processing tools adapted to process a plurality of manufactured items in a process flow, a metrology tool, and a process control server. The metrology tool is adapted to measure characteristics of a plurality of manufactured items in the process flow.

Abstract: A method for controlling the flow of wafers through a process flow includes monitoring operating states of a plurality of processing tools adapted to process wafers; measuring a characteristic of a particular incoming wafer; identifying a particular processing tool having an operating state complimentary to the measured characteristic; and routing the particular incoming wafer to the particular processing tool for processing. A manufacturing system includes a plurality of processing tools adapted to process wafers and a process control server. The process control server is adapted to access metrology data related to a characteristic of a particular incoming wafer, identify a particular processing tool having an operating state complimentary to the characteristic, and route the particular incoming wafer to the particular processing tool for processing.

Abstract: The present invention provides for a method and an apparatus for using scatterometry to perform feedback and feed-forward control. A processing run of semiconductor devices is performed. Metrology data from the processed semiconductor devices is acquired. Error data is acquired by analyzing the acquired metrology data. A determination is made whether the error data merits modification to the processing of semiconductor devices. A feedback modification of the processing of semiconductor devices is performed in response to the determination that the error data merits modification to the processing of semiconductor devices. A feed-forward modification of the processing of the semiconductor devices is performed in response to the determination that the error data merits modification to the processing of semiconductor devices.

Abstract: The present invention is directed to an automated method of controlling critical dimensions of features by controlling the stepper exposure dose, and a system for accomplishing same. In one embodiment, the method comprises measuring a critical dimension (FICD) of a plurality of features formed in a process layer, and providing the measured critical dimensions of the features to a controller that determines, based upon the measured critical dimensions, an exposure dose of an exposure process to be performed on at least one subsequently processed wafer. In another embodiment, the method comprises measuring a critical dimension (DICD) of a plurality of features formed in a patterned layer of photoresist, providing the measured critical dimensions of the features in the patterned layer of photoresist to a controller that determines, based upon the measured critical dimensions, an exposure dose of an exposure process to be performed on at least one subsequently processed wafer.