Abstract: An electron beam exposure method is described which provides a means of curing spin-on-glass or spin-on-polymer dielectric material formed on a semiconductor wafer. The dielectric material insulates the conductive metal layer and planarizes the topography in the process of manufacturing multilayered integrated circuits. The method utilizes a large area, uniform electron beam exposure system in a soft vacuum environment. A wafer coated with uncured dielectric material is irradiated with electrons of sufficient energy to penetrate the entire thickness of the dielectric material and is simultaneously heated by infrared heaters. By adjusting the process conditions, such as electron beam total dose and energy, temperature of the wafer, and ambient atmosphere, the properties of the cured dielectric material can be modified.

Abstract: A wafer processing cluster tool, having one or more electron beam exposure modules receives wafers from the tool transport mechanism at the internal vacuum pressure of the machine. The loading, unloading, handling and processing of wafers in the machine can occur while other wafers are being treated. The cluster tool has a transport module enclosing an internal volume continuously maintainable under vacuum, a plurality of ports and a wafer transport mechanism for selectively transferring wafers among processing modules. The processing modules perform wafer processing therein under vacuum. At least one semiconductor wafer processing module is an electron beam radiation module. The tool further has a loading module and an unloading module attached to the transport module which are capable of inserting and removing wafers into and out of the transport module from an external environment.

Abstract: An electron beam exposure method is described which provides a means of curing spin-on-glass formed on a semiconductor wafer which insulates the conductive metal layer and planarizes the topography in the process of manufacturing multilayered integrated circuits. The method utilizes a large area, uniform electron beam exposure system in a soft vacuum environment. A wafer coated with uncured siloxane spin-on-glass is irradiated with electrons of sufficient energy to penetrate the entire thickness of the spin-on-glass and is simultaneously heated by infrared heaters. The wafer is exposed to a predetermined dose of electrons while simultaneously raised to a peak temperature in a soft vacuum environment. The electron beam and infrared heaters are then extinguished and the substrate cooled before removing from vacuum.