Patents by Inventor Anthony M. Mack
Anthony M. Mack has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8760808Abstract: An apparatus that includes a writer that includes a write pole, at least one return pole, a writer coil and a write pole tip, wherein the write coil wraps around the write pole such that the flow of electrical current through the write coil generates a magnetic flux at the write pole tip, and wherein the write coil has a writer coil shape; and a heater that includes a resistive material, wherein the heater has a heater shape that substantially matches the writer coil shape.Type: GrantFiled: April 29, 2010Date of Patent: June 24, 2014Assignee: Seagate Technology LLCInventors: Kevin Richard Heim, Erik J. Hutchinson, Steve A. Mastain, Jay A. Loven, Anthony M. Mack
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Publication number: 20110267715Abstract: An apparatus that includes a writer that includes a write pole, at least one return pole, a writer coil and a write pole tip, wherein the write coil wraps around the write pole such that the flow of electrical current through the write coil generates a magnetic flux at the write pole tip, and wherein the write coil has a writer coil shape; and a heater that includes a resistive material, wherein the heater has a heater shape that substantially matches the writer coil shape.Type: ApplicationFiled: April 29, 2010Publication date: November 3, 2011Applicant: SEAGATE TECHNOLOGY LLCInventors: Kevin Richard Heim, Erik J. Hutchinson, Steve A. Mastain, Jay A. Loven, Anthony M. Mack
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Patent number: 6738236Abstract: Disclosed are a spin valve magnetoresistive sensor and methods of fabricating the same. The sensor includes a free layer, a synthetic antiferromagnetic. (SAF) layer, a spacer layer positioned between the free layer and the SAF layer, and a Mn-based antiferromagnetic pinning layer in contact with the SAF layer. The SAF layer includes first and second ferromagnetic CoFe layers and an Ru spacer layer positioned between and directly in contact with the first and second CoFe ferromagnetic layers.Type: GrantFiled: May 6, 1999Date of Patent: May 18, 2004Assignee: Seagate Technology LLCInventors: Sining Mao, Anthony M. Mack, Brenda A. Everitt, Edward S. Murdock, Zheng Gao
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Patent number: 6724584Abstract: Methods of fabricating spin valve sensors in accordance with the invention include forming a pinning layer from an antiferromagnetic material and forming a synthetic antiferromagnet adjacent the pinning layer. A free ferromagnetic layer is formed, and exchange tabs are formed adjacent outer portions of the free ferromagnetic layer for biasing the free layer. The exchange tabs are formed from the same antiferromagnetic material as the first pinning layer. Then, the magnetic moments of the synthetic antiferromagnet are set, and the magnetic moment of the free ferromagnetic layer is biased, during a single anneal in the presence of a single magnetic field.Type: GrantFiled: May 20, 2002Date of Patent: April 20, 2004Assignee: Seagate Technology LLCInventors: Anthony M. Mack, Zheng Gao, Nurul Amin, Sining Mao, Richard Michel
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Patent number: 6710982Abstract: A read/write head includes a bottom shield and a shared shield. The shared shield includes a first domain and a plurality of closure domains. The read/write head also includes a magnetoresistive sensor deposited adjacent an air bearing surface between the bottom shield and the shared shield. The magnetoresistive sensor includes a magnetoresistor aligned with the first domain. Non-magnetic material separates the magnetoresistive sensor from the bottom shield and the shared shield. The shared shield includes a shaped feature that defines an unambiguous direction of magnetization for the first domain.Type: GrantFiled: June 21, 2001Date of Patent: March 23, 2004Assignee: Seagate Technology LLCInventors: Anthony M. Mack, Ladislav R. Pust, Christopher J. Rea, Sunita Gangopadhyay, Patrick J. Ryan
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Patent number: 6667616Abstract: A spin valve sensor comprising a ferromagnetic free layer, a ferromagnetic pinned layer, a layer of non-ferromagnetic material positioned between the free layer and the pinned layer, and an antitferromagnetic pinning layer positioned adjacent to the pinned layer such that the pinning layer is in direct contact with the pinned layer. The free layer comprises a multi-layer stack including a non-magnetic insulating spacer positioned between a first and a second ferromagnetic sublayer. The non-magnetic insulating spacer provides a specular electron scattering effect. The first and the second ferromagnetic sublayers each have passive end regions separated by a central active region. The spin valve sensor further includes bias means positioned between the first and the second ferromagnetic sublayers in the passive end regions.Type: GrantFiled: September 2, 1999Date of Patent: December 23, 2003Assignee: Seagate Technology LLCInventors: Alexander M. Shukh, Edward S. Murdock, Anthony M. Mack
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Patent number: 6654202Abstract: A disc drive includes a disc and a read/write head accessing the disc. The head includes a thermally conductive substrate and a write coil window surrounded by a shared pole piece thermally coupled to the substrate, a central core, a write pole piece and a write gap. A bottom coil adjacent the shared pole piece has multiple turns that have bottom narrowed regions passing through the window. A top coil adjacent the write pole piece has multiple turns that have top narrowed regions passing through the window. The top turns are fewer in number and flattened relative to the bottom turns.Type: GrantFiled: June 13, 2001Date of Patent: November 25, 2003Assignee: Seagate Technology LLCInventors: Christopher J. Rea, Ladislav R. Pust, Anthony M. Mack
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Patent number: 6548114Abstract: A method of fabricating a spin valve sensor includes sequentially depositing, without breaking vacuum, a seed layer and an antiferromagnetic layer. Sequentially depositing the seed layer and the antiferromagnetic layer includes depositing a seed layer on a substrate; depositing a Mn-alloy layer of the antiferromagnetic layer directly on top of the seed layer; and depositing a buffer layer of the antiferromagnetic layer directly on top of the Mn-alloy layer. The seed layer, the Mn-alloy layer and the buffer layer are annealed. After annealing, a portion of the buffer layer is etched and a synthetic antiferromagnetic layer is deposited on top of the buffer layer. A spacer layer is deposited on top of the synthetic antiferromagnetic layer, and a free layer is deposited on top of the spacer layer.Type: GrantFiled: July 17, 2001Date of Patent: April 15, 2003Assignee: Seagate Technology LLCInventors: Sining Mao, Anthony M. Mack, Brenda A. Everitt, Edward S. Murdock, Zheng Gao
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Patent number: 6469878Abstract: Methods of fabricating spin valve sensors in accordance with the invention include forming a pinning layer from an antiferromagnetic material and forming a synthetic antiferromagnet adjacent the pinning layer. A free ferromagnetic layer is formed, and exchange tabs are formed adjacent outer portions of the free ferromagnetic layer for biasing the free layer. The exchange tabs are formed from the same antiferromagnetic material as the first pinning layer. Then, the magnetic moments of the synthetic antiferromagnet are set, and the magnetic moment of the free ferromagnetic layer is biased, during a single anneal in the presence of a single magnetic field.Type: GrantFiled: February 8, 2000Date of Patent: October 22, 2002Assignee: Seagate Technology LLCInventors: Anthony M. Mack, Zheng Gao, Nurul Amin, Sining Mao, Richard Michel
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Patent number: 6462919Abstract: A spin valve sensor is disclosed that comprises a first layer of ferromagnetic material and a second layer of ferromagnetic material. A first layer of non-ferromagnetic material is positioned between the first and second layers of ferromagnetic material. A pinning layer is positioned adjacent to the first layer of ferromagnetic material such that the pinning layer is in contact with the first layer of ferromagnetic material. The spin valve includes synthetic antiferromagnetic bias means extending over passive end regions of the second layer of ferromagnetic material for producing a longitudinal bias in the passive end regions of a level sufficient to maintain the passive end regions in a single domain state. A method for forming a spin valve sensor with exchange tabs is also disclosed.Type: GrantFiled: November 18, 1999Date of Patent: October 8, 2002Assignee: Seagate Technology LLCInventors: Anthony M. Mack, Sining Mao, Michael A. Seigler, Nurul Amin, Taras G. Pokhil, Ananth Naman, Jin Li, Zheng Gao, Edward S. Murdock, Jumna P. Ramdular, Timothy Radke
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Publication number: 20020131219Abstract: Methods of fabricating spin valve sensors in accordance with the invention include forming a pinning layer from an antiferromagnetic material and forming a synthetic antiferromagnet adjacent the pinning layer. A free ferromagnetic layer is formed, and exchange tabs are formed adjacent outer portions of the free ferromagnetic layer for biasing the free layer. The exchange tabs are formed from the same antiferromagnetic material as the first pinning layer. Then, the magnetic moments of the synthetic antiferromagnet are set, and the magnetic moment of the free ferromagnetic layer is biased, during a single anneal in the presence of a single magnetic field.Type: ApplicationFiled: May 20, 2002Publication date: September 19, 2002Inventors: Anthony M. Mack, Zheng Gao, Nurul Amin, Sining Mao, Richard Michel
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Publication number: 20020024780Abstract: Disclosed are a spin valve magnetoresistive sensor and methods of fabricating the same. The sensor includes a free layer, a synthetic antiferromagnetic (SAF) layer, a spacer layer positioned between the free layer and the SAF layer, and a Mn-based antiferromagnetic pinning layer in contact wish the SAF layer. The SAF layer includes first and second ferromagnetic CoFe layers and an Ru spacer layer positioned between and directly in contact with the first and second CoFe ferromagnetic layers.Type: ApplicationFiled: July 17, 2001Publication date: February 28, 2002Inventors: Sining Mao, Anthony M. Mack, Brenda A. Everitt, Edward S. Murdock, Zheng Gao
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Publication number: 20020008945Abstract: A read/write head includes a bottom shield and a shared shield. The shared shield includes a first domain and a plurality of closure domains. The read/write head also includes a magnetoresistive sensor deposited adjacent an air bearing surface between the bottom shield and the shared shield. The magnetoresistive sensor includes a magnetoresistor aligned with the first domain. Non-magnetic material separates the magnetoresistive sensor from the bottom shield and the shared shield. The shared shield includes a shaped feature that defines an unambiguous direction of magnetization for the first domain.Type: ApplicationFiled: June 21, 2001Publication date: January 24, 2002Inventors: Anthony M. Mack, Ladislav R. Pust, Christopher J. Rea, Sunita Gangopadhyay, Patrick J. Ryan
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Publication number: 20010053044Abstract: A disc drive includes a disc and a read/write head accessing the disc. The head includes a thermally conductive substrate and a write coil window surrounded by a shared pole piece thermally coupled to the substrate, a central core, a write pole piece and a write gap. A bottom coil adjacent the shared pole piece has multiple turns that have bottom narrowed regions passing through the window. A top coil adjacent the write pole piece has multiple turns that have top narrowed regions passing through the window. The top turns are fewer in number and flattened relative to the bottom turns.Type: ApplicationFiled: June 13, 2001Publication date: December 20, 2001Inventors: Christopher J. Rea, Ladislav R. Pust, Anthony M. Mack
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Patent number: 3948090Abstract: A method of measuring dimensional variations in a workpiece in which two spaced points are formed on the workpiece and their images transferred to an image transfer material. After the workpiece has been subjected to a mechanical and/or thermal load and then allowed to return to its original unloaded state, the images of the points are again transferred to an image transfer material and the difference in spacing between the images of the points is compared to ascertain the dimensional changes.Type: GrantFiled: February 14, 1974Date of Patent: April 6, 1976Assignee: Foster Wheeler Energy CorporationInventors: Irwin Berman, Charles F. Nash, Robert Henschel, Joseph W. Schroeder, Anthony M. Mack, Bernardino M. Alfano